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APT website http: www advancedpower com

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3 pages
Niveau: Supérieur, Doctorat, Bac+8
APTM10AM02F A PT M 10 A M 02 F– Re v 0 M ar ch , 20 04 APT website – 1 - 3 OUTVBUS E1 G1 0/VBUS G2 E2 Absolute maximum ratings These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 100 V Tc = 25°C 495 ID Continuous Drain Current Tc = 80°C 370 IDM Pulsed Drain current 1900 A VGS Gate - Source Voltage ±30 V RDSon Drain - Source ON Resistance 2.25 m? PD Maximum Power Dissipation Tc = 25°C 1250 W IAR Avalanche current (repetitive and non repetitive) 100 A EAR Repetitive Avalanche Energy 50 EAS Single Pulse Avalanche Energy 3000 mJ VDSS = 100V RDSon = 2.25m? max @ Tj = 25°C ID = 495A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS V® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance Phase leg MOSFET Power Module

  • gate charge

  • tj operating junction

  • vgs

  • bvdss drain - source

  • drain current

  • fredfets - low rdson - low

  • vgs gate - source

  • avalanche current

  • voltage vgs


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Phase leg MOSFET Power Module
APTM10AM02F
VDSS= 100V RDSon= 2.25mΩmax @ Tj = 25C ID= 495A @ Tc = 25C
Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features FREDFETsPower MOS V -Low RDSon-Low input and Miller capacitance -Low gate charge -Avalanche energy rated  -Very rugged Kelvin source for easy drive Very low stray inductance -Symmetrical design -M5 power connectors G1 VBUS 0/VBUSOUTE1 Benefits E2Outstanding performance at high frequency operation G2Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Absolute maximum ratingsSymbol ParameterMax ratingsUnit VDSS Drain- Source Breakdown Voltage100 V Tc= 25C495 IDDrain Current Continuous Tc= 80C370 A IDM PulsedDrain current1900 VGS±30 V- Source Voltage Gate RDSon2.25 m Drain- Source ON ResistanceΩPDTPower Dissipation Maximumc1250 W= 25C IAR100 A Avalanchecurrent (repetitive and non repetitive) EARAvalanche Energy50 Repetitive mJ EAS3000Pulse Avalanche Energy Single  TheseDevices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com1 - 3
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