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STTA106/U

TURBOSWITCHULTRA-FAST HIGH VOLTAGE DIODE

MAINPRODUCTCHARACTERISTICS
I
F(AV)
1A
V
RRM
600V
t
rr
(typ)20ns
V
F
(max)1.5V

BMSSTTA106U

STDTOA-11506

FEATURESANDBENEFITS
n
SOPPEECRIAFITICOTNOS:FFRREEEEWWHHEEEELLMOORDBEOOSTER
EDOIDn
ULTRA-FASTANDSOFTRECOVERY
n
VBEORTYHLTOHEWDOIVOEDREALALNDPOTWHEERCLOOMSPSAENSIOINN
TRANSISTOR
n
HIGHFREQUENCYOPERATIONS
DESCRIPTION
TheTURBOSWITCHisaveryhighperformancecontrolfreewheelapplicationsandinbooster
sTeUriReBsOofSuWltIrTa-CfaHstfahimgihlyvodlrtaasgtiecaplolywecrutdsioldoesss.esincdiirocdueitrieas.pplicationsinpowerfactorcontrol
abnotdhtMhOeSdiFoEdTeianndaltlhfereaesswohceiealtemdosdweitcohpinegraItiGoBnTstAhveasileab6l0e0eVithdeerviicnesSMarBeoprarDtiOc-u1la5rlayxiinatlepnadcekdagfoer,
andisparticularysuitableandefficientinmotoruseon240Vdomesticmains.
ABSOLUTERATINGS
(limitingvalues)
SymbolParameterValueUnit
V
RRM
Repetitivepeakreversevoltage600V
I
F(RMS)
RMSforwardcurrent6A
I
FRM
RepetitivepeakforwardcurrenttFp==55k
m
Hszsquare10A
I
FSM
Surgenonrepetitiveforwardcurrenttp=10mssinusoidal25A
T
j
Maximumoperatingjunctiontemperature125°C
T
stg
Storagetemperaturerange-65to+150°C
TM:TURBOSWITCHisatrademarkofSTMicroelectronics

February2001-Ed:5D

8/1

STTA106/U
THERMALANDPOWERDATA
SymbolParameterTestconditions
R
th(j-I)
JunctiontoleadSMB
JunctiontoleadL=5mmDO-15
P
1
ConductionpowerI
F(AV)
=0.8A
d
=0.5SMB
dissipationTlead=93°C
I
F(AV)
=0.8A
d
=0.5DO-15
Tlead=60°C
P
max
TotalpowerdissipationTlead=90°CSMB
(PPm3a=x1=0P%1P+1)P3Tlead=60°CDO-15

STATICELECTRICALCHARACTERISTICS
SymbolParameterTestconditionsMin
V
F*
ForwardvoltagedropI
F
=1ATj=25°C
Tj=125°C
I
R**
ReverseleakagecurrentV
R
=0.8xTj=25°C
V
RRM
Tj=125°C
V
to
ThresholdvoltageIp<3.I
F(AV)
Tj=125°C
RdDynamicresistance
Testpulse:*tp=380
m
s,
d
<2%
**tp=5ms,
d
<2%
Toevaluatethemaximumconductionlossesusethefollowingequation:
P=V
to
xI
F(AV)
+RdxI
F2(RMS)

DYNAMICELECTRICALCHARACTERISTICS
TURN-OFFSWITCHING
SymbolParameterTestconditionsMin
t
rr
ReverseTj=25°C
recoverytimeI
F
=0.5AI
R
=1AIrr=0.25A
I
F
=1AdI
F
/dt=-50A/
m
sV
R
=
V03I
RM
MaximumTj=125°CVR=400VI
F
=1A
recoverycurrentdI
F
/dt=-8A/
m
s
dI
F
/dt=-50A/
m
s
SfactorSoftnessfactorTj=125°CV
R
=400VI
F
=1A
dI
F
/dt=-50A/
m
s
TURN-ONSWITCHING
SymbolParameterTestconditionsMin
t
fr
ForwardTj=25°C
recoverytimeI
F
=1A,dI
F
/dt=8A/
m
s
V
Fp
Peakforwardmeasuredat1.1
´
V
F
max
voltage

8/2

eulaV32544.14.15.15.1

TypMax
57.11.11.5
01250750
51.1053

TypMax
02056.06.11.1

TypMax
00501

tinUC°W/W/C°WWWW

tinUVAmVWm

tinUsnA/

tinUsnV

Fig.1
:Conductionlossesversusaveragecurrent.
)W(1P8.11.6
d
= 0.05
d
= 0.1
d
= 0.2
d
= 0.5
4.11.2
d
= 1
0.18.06.04.00.2
IF(av) (A)
0.00.00.10.20.30.40.50.60.70.80.91.01.1

Fig.3:
PeakreverserecoverycurrentversusdI
F
/dt
(90%confidence).

IRM(A)
87
TVjR=1=2450°0CV
6
IF=2*IF(av)
543
IF=IF(av)
21
dIF/dt(A/µs)
0050100150200

Fig.5:
Softnessfactor(tb/ta)versusdI
F
/dt(typical
values).
S factor
6.1IFV=R2=*4IF0(0aVv)
1.4
Tj=125°C
2.10.18.0dIF/dt(A/µs)
0.60102030405060708090100

STTA106/U

Fig.2:
Forwardvoltagedropversusforwardcur-
rent(maximumvalues).
IFM(A)
1+E11E+0
Tj=125°C
Tj=25°C
1-E1VFM(V)
1E-20.00.51.01.52.02.53.0

Fig.4:
ReverserecoverytimeversusdI
F
/dt(90%
confidence).

trr(ns)
522200
TVjR=1=2450°0CV
571051125
IF=2*IF(av)
100
IF=IF(av)
5705250
dIF/dt(A/µs)
020406080100120140160180200

v
F
e
i
r
g
s
.
us
6:
juRncetliaotinvteemvapreirataitounreo(fredfeyrneanmciecTjpa=ra12m5e°teCr)s.
(Reference:Tj=125°C)
1.10.19.08.07.052

S factor
MRITj(°C)
5075100125

8/3

STTA106/U

d
F
I
i
F
g
/
.
dt
7
(
:
90T%racnosinefindtenpceea)k.forwardvoltageversus
VFP(V)
0435
TjI=F1=225A°C
03520251015
dIF/dt(A/µs)
0020406080100120140160180200

Fig.9:
Junctioncapacitanceversusreversevolt-
ageapplied(typicalvalues).
)Fp(C01

5

211

8/4

)V(RV01

F=1MHz

100200

Fig.8:
ForwardrecoverytimeversusdI
F
/dt(90%
confidence).

A2=FIVFR=1.1*VF max.
Tj=125°C

tfr(ns)
550500
445000
053320500
002115000
50
dIF/dt(A/µs)
0020406080100120140160180200

STTA106/U
APPLICATIONDATA
TheTURBOSWITCH
TM
isespeciallydesignedtoThewayofcalculatingthepowerlossesisgiven
providethelowestoverallpowerlossesinanybelow:
FreewhellModeapplication(seefig.A)
consideringbothdiodeandcompaniontransistor,
thusoptimizingtheoverallperformanceintheend
application.

TOTALLOSSES
duetothediode
P=P1+P2+P3+P4+P5Watts

CONDUCTIONREVERSESWITCHING
LOSSESLOSSESLOSSES
inthediodeinthediodeinthediode

Fig.A:
FREEWHEELMODE
SWITCHING
TRANSISTOR

VR

ptTF=1/T
d
= tp/T

DIODE:
TURBOSWITCH

SLWIOTSCSHEISNG
idnutehteottrhaensdiisotdoer

LI

DAOL

8/5

STTA106/U
APPLICATIONDATA(Contd)
Fig.B:
STATICCHARACTERISTICS
IIFdRVRVIRVtoVF

Fig.C:
TURN-OFFCHARACTERISTICS
VLITRANSISTOR
It

8/6

IdIF/dtDIODE
atbtVtIRMdIR/dt
RVtrr=ta+tbS=tb/ta
IdI
F
/dt=V
R
/LORPEECRTAIFTIIEORN
Vtatbt
I
RM
dIR/dt
VRtrrS==ttab/+tatb

Conduction
losses:
P1=V
to
xI
F(AV)
+R
d
xI
F2(RMS)

Reverse
losses:
P2=V
R
xI
Rx(1-
d
)

(
T
in
ur
th
n-
e
o
t
n
ralnossissetosr:,duetothediode)
P5=V
R
´
I
RM
2
´
(3
#
2
´
S)
´
F
6xdI
F
dt
+V
R
´
I
RM
´
I
L
´
(S
#
2)
´
F
2
´
dI
F
dt

Turn-off
losses(inthediode):
P3=V
R
´
I
RM
2
´
S
´
F
6xdI
F
dt
IPG3BaTndP5aresuitableforpowerMOSFETand

APPLICATIONDATA(Contd)
Fig.D:
TURN-ONCHARACTERISTICS
IFdIF/dtIFmax
t0VFVpF1.1VFVF
t0rft

PACKAGE MECHANICAL DATA
BMS

C

1E

D

E1AA2L

FOOTPRINTDIMENSIONS
(inmillimeters)

1.522.751.52

3.2

b

Turn-on
losses:
P4=0.4(V
FP
-V
F
)xI
Fmax
xt
fr
xF

STTA106/U

DIMENSIONS
REF.MillimetersInches
Min.Max.Min.Max.
A11.902.450.0750.096
A20.050.200.0020.008
b1.952.200.0770.087
c0.150.410.0060.016
E5.105.600.2010.220
E14.054.600.1590.181
D3.303.950.1300.156
L0.751.600.0300.063

8/7

STTA106/U
PACKAGE MECHANICAL DATA
51-ODC

D

DIMENSIONS
REF.MillimetersInches
Min.Max.Min.Max.
A6.056.750.2380.266
B2.953.530.1160.139
C26311.0241.220
D0.710.880.0280.035

MARKING
TypeMarkingPackage
STTA106UT01SMB
STTA106STTA106DO-15
STTA106RLSTTA106DO-15
nn
EBpaonxdyinmdieceattsesUcLa9t4h,oVd0e

A

B

Weight
g1.0g4.0g4.0

C

BaseQty
21500000
0006

Deliverymode
tape&reel
Ammopack
tape&reel

Informationfurnishedisbelievedtobeaccurateandreliable.However,STMicroelectronicsassumesnoresponsibilityfortheconsequencesof
useofsuchinformationnorforanyinfringementofpatentsorotherrightsofthirdpartieswhichmayresultfromitsuse.Nolicenseisgrantedby
implicationorotherwiseunderanypatentorpatentrightsofSTMicroelectronics.Specificationsmentionedinthispublicationaresubjectto
changewithoutnotice.Thispublicationsupersedesandreplacesallinformationpreviouslysupplied.
STMicroelectronicsproductsarenotauthorizedforuseascriticalcomponentsinlifesupportdevicesorsystemswithoutexpresswrittenap-
provalofSTMicroelectronics.
TheSTlogoisaregisteredtrademarkofSTMicroelectronics
©2001STMicroelectronics-PrintedinItaly-Allrightsreserved.
STMicroelectronicsGROUPOFCOMPANIES
Australia-Brazil-China-Finland-France-Germany-HongKong-India-Italy-Japan-Malaysia
Malta-Morocco-Singapore-Spain-Sweden-Switzerland-UnitedKingdom-U.S.A.
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