APT website http: www advancedpower com

Pdoumergue

Description

Niveau: Supérieur, Doctorat, Bac+8
APTM20DUM08TG A PT M 20 D U M 08 TG – R ev 3 F eb ru ar y, 2 00 6 APT website – 1 – 6 S Q1 Q2 D2 S2S1 G1 G2 D1 NTC1 NTC2 D2 NTC2 D2 S1 D1 NTC1 S2 G2 S2 G2 S G1 Absolute maximum ratings These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 200 V Tc= 25°C 208 ID Continuous Drain Current Tc = 80°C 155 IDM Pulsed Drain current 832 A VGS Gate - Source Voltage ±30 V RDSon Drain - Source ON Resistance 10 m? PD Maximum Power Dissipation Tc = 25°C 781 W IAR Avalanche current (repetitive and non repetitive) 100 A EAR Repetitive Avalanche Energy 50 EAS Single Pulse Avalanche Energy 3000 mJ VDSS = 200V RDSon = 8m? typ @ Tj = 25°C ID = 208A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits

• source voltage


• gate charge


• vgs


• drain current


• junction temperature


• low voltage


• avalanche current

Sujets

• Junction temperature
• Low voltage

Informations

• Publié par: profil-zyak-2012
• Nombre de lectures: 176
• Langue: English

Extrait

APTM20DUM08TG

V DSS = 200V ual common source R DSon = 8mΩtyp @ Tj = 25°C MOSFET Power Module I D = 208A @ Tc = 25°C Applicatio •AC and DC motor control •Switched Mode Power Supplies D1 •Power Factor Correction D2 Q1 Q2 Features ® G1 •Power MOS 7MOSFETs G 2 -Low R DSon -Low input and Miller capacitance S1 S2 -Low gate charge -Avalanche energy rated S NT C1 NT C2 -Very rugged •Kelvin source for easy drive •Very low stray inductance -Symmetrical design -Lead frames for power connections •Internal thermistor for temperature monitoring •High level of integration Benefits G2 D2 S2 •Outstanding performance at high frequency operation •Direct mounting to heatsink (isolated package) D2 D1 S •Low junction to case thermal resistance •Solderable terminals both for power and signal for S1 S2NTC2 easy PCB mounting G1 G2 NTC1 •Low profile •RoHS compliant Absolute maximumratings ymbol ParameterMax ratingsUnit V DSS  Drain200 V- Source Breakdown Voltage T c 208= 25°C I D  ContinuousDrain Current T c 155 A = 80°C I DM 832Drain current Pulsed V GS  Gate- Source Voltage±30 V R DSon - Source ON Resistance Drain10 m Ω P D  MaximumPower DissipationT c = 25°C781 W I AR current (repetitive and non repetitive) Avalanche100 A E AR 50Avalanche Energy Repetitive mJ E AS 3000Pulse Avalanche Energy Single  TheseDevices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT websitehttp:/ www.advancedpower.com 1 6