APT website http: www advancedpower com

Description

Niveau: Supérieur, Doctorat, Bac+8
APTM20DUM04 A PT M 20 D U M 04 – R ev 1 M ay , 2 00 4 APT website – 1 – 6 D2G1 S1 S G2 D1 S2 Absolute maximum ratings These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 200 V Tc = 25°C 372 ID Continuous Drain Current Tc = 80°C 278 IDM Pulsed Drain current 1488 A VGS Gate - Source Voltage ±30 V RDSon Drain - Source ON Resistance 4 m PD Maximum Power Dissipation Tc = 25°C 1250 W IAR Avalanche current (repetitive and non repetitive) 100 A EAR Repetitive Avalanche Energy 50 EAS Single Pulse Avalanche Energy 3000 mJ VDSS = 200V RDSon = 4m max @ Tj = 25°C ID = 372A @ Tc = 25°C Application AC Switches Switched Mode Power Supplies Uninterruptible Power Supplies Features Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile Dual common source MOSFET Power Module

• source voltage


• gate charge


• vgs


• drain current


• junction temperature


• low voltage


• avalanche current

Sujets

• Junction temperature
• Low voltage

Informations

• Publié par: profil-zyak-2012
• Nombre de lectures: 78

Extrait

Dual common source MOSFET Power Module

APTM20DUM04

V DSS = 200V R DSon = 4mmax @ Tj = 25°C I D = 372A @ Tc = 25°C

Application AC Switches Switched Mode Power Supplies Uninterruptible Power Supplies Features ® Power MOS 7MOSFETs - LowR DSon - Lowinput and Miller capacitance - Lowgate charge - Avalancheenergy rated - Veryrugged Kelvin source for easy drive Very low stray inductance - Symmetricaldesign - M5power connectors G1 D1 S D2 High level of integration S1 Benefits S2 Outstanding performance at high frequency operation G2 Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile Absolute maximum ratings Symbol ParameterMax ratingsUnit V DSS  Drain200 V- Source Breakdown Voltage T c = 25°C372 I D  ContinuousDrain Current T c 278 A = 80°C I DM  PulsedDrain current1488 V GS - Source Voltage±30 V Gate R DSon - Source ON Resistance Drain4 m  P D  MaximumPower DissipationT c = 25°C1250 W I AR  Avalanchecurrent (repetitive and non repetitive)100 A E AR  Repetitive50Avalanche Energy mJ E AS  SinglePulse Avalanche Energy3000  TheseDevices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT websitehtt :/www.advanced ower.com 1 6