Charge transport in single molecule junctions [Elektronische Ressource] : vibronic effects and conductance switching / Claudia Benesch
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Charge transport in single molecule junctions [Elektronische Ressource] : vibronic effects and conductance switching / Claudia Benesch

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Publié par
Publié le 01 janvier 2008
Nombre de lectures 19
Langue Deutsch
Poids de l'ouvrage 10 Mo

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Institut fur˜ Physikalische und Theoretische Chemie,
Lehrstuhl fur˜ Theoretische Chemie
der Technischen Universit˜at Munc˜ hen
Charge Transport in Single Molecule Junctions:
Vibronic Efiects and Conductance Switching
Claudia Benesch
Vollst˜andiger Abdruck der von der Fakult˜at fur˜ Chemie der Technischen
Universit˜at Munc˜ hen zur Erlangung des akademischen Grades eines
Doktors der Naturwissenschaften
genehmigten Dissertation.
Vorsitzender: Univ.-Prof. Dr. M. Groll
Prufer˜ der Dissertation:
1. Priv.-Doz. Dr. M. Thoss
2. Univ.-Prof. Dr. H. J. Neusser
Die Dissertation wurde am 8.1.2008 bei der Technischen
Universit˜at Munc˜ hen eingereicht und durch die Fakult˜at fur˜ Chemie
am 20.2.2008 angenommen.Ich danke
† Meiner Familie fur˜ ihren unerschutterlic˜ hen Glauben an
meine intellektuellen F˜ahigkeiten.
† Prof. Dr. WolfgangDomckedafur,˜ dassermirdieM˜oglichkeit
gegeben hat meine Doktorarbeit an seinem Lehrstuhl zu
schreiben und fur˜ die kollegiale Art mit der er seine Mitar-
beiter fuhrt.˜
† PD Dr. Michael Thoss fur˜ die viele Muhe˜ und Zeit, die er
fur˜ meine wissenschaftliche Betreuung aufgebracht hat.
•† Dr. Martin C¶‡•zek fur˜ zahlreiche Programme und Daten,
die ich im Laufe meiner Arbeit verwenden konnte.
† Prof. Dr. Andrzej Sobolewski fur˜ die Anregung mich mit
molekularen Schaltern zu besch˜aftigen.Contents
1 Introduction 3
2 A Survey of Experimental and Theoretical Techniques 7
2.1 Experimental Methods . . . . . . . . . . . . . . . . . . . . . . 7
2.2 Theoretical Methods . . . . . . . . . . . . . . . . . . . . . . . 9
3 Modelling of Molecular Junctions 13
3.1 Hamiltonian of the Molecular Junction . . . . . . . . . . . . . 13
3.2 Partitioning of the . . . . . . . . . . . . . 17
3.3 Density Functional Theory . . . . . . . . . . . . . . . . . . . . 19
3.4 Determination of the Parameters . . . . . . . . . . . . . . . . 21
4 Scattering Theory 24
4.1 Scattering Theory Formalism . . . . . . . . . . . . . . . . . . 24
4.1.1 Transmission Probability . . . . . . . . . . . . . . . . . 24
4.1.2 Trace Formula . . . . . . . . . . . . . . . . . . . . . . . 26
4.1.3 Molecular Green’s function . . . . . . . . . . . . . . . . 29
4.1.4 Calculation of the Current . . . . . . . . . . . . . . . . 32
4.2 Application to Benzenethiolates . . . . . . . . . . . . . . . . . 33
4.2.1 Benzenedithiolate . . . . . . . . . . . . . . . . . . . . . 34
4.2.2 Benzenedi(ethanethiolate) . . . . . . . . . . . . . . . . 40
4.2.3 BDET between cuboid-shaped gold clusters . . . . . . 49
4.2.4 Benzenedi(butanethiolate) . . . . . . . . . . . . . . . . 53
4.3 Surface self-energy models . . . . . . . . . . . . . . . . . . . . 58
4.4 Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
5 Density Matrix Theory 64
5.1 Density Matrix Formalism . . . . . . . . . . . . . . . . . . . . 64
5.1.1 Density Operator . . . . . . . . . . . . . . . . . . . . . 64
5.1.2 Derivation of the Equation of Motion . . . . . . . . . . 65
5.1.3 Polaron transformation of the Hamiltonian . . . . . . . 69
15.1.4 Solving the Equation of Motion . . . . . . . . . . . . . 70
5.1.5 Expression for the Current . . . . . . . . . . . . . . . . 73
5.1.6 Electronic single level system without vibronic coupling 74
5.1.7 Comparison to Scattering Theory . . . . . . . . . . . . 76
5.1.8 Technical Details of the Implementation . . . . . . . . 78
5.2 Results and Discussion . . . . . . . . . . . . . . . . . . . . . . 81
5.2.1 Observables of Interest . . . . . . . . . . . . . . . . . . 81
5.2.2 Purely Electronic Calculation . . . . . . . . . . . . . . 82
5.2.3 Efiect of the C-C-C bending mode. . . . . . . . . . . . 84
5.2.4 Efiect of the C-C stretching mode . . . . . . . . . . . . 89
5.2.5 Coherences . . . . . . . . . . . . . . . . . . . . . . . . 94
5.3 Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95
6 Optical Switches 97
7 Summary 107
A Surface Self-energy 109
2Chapter 1
Introduction
’Molecular electronics’ is an interdisciplinary fleld, reaching into chemistry,
physics, and electrical engineering, with the ambitious goal to replace or
complement silicon semiconductor electronics with devices based on single
or few molecules. While there is a natural limit to the progressing minia-
turization of semiconductor components (top-down approach), molecules of
difierentsizeandfunctionalityaresynthesizedonanatomiclevel(bottom-up
approach). By means of organic synthesis it is possible to tailor molecules in
suchawaythatspeciflcelectronic, mechanical, andopticalpropertiesareob-
tained. Based on nano-scale molecular electronic devices it could be possible
to build smaller, faster, and cheaper computers. Besides possible practical
applications, scientists are naturally interested in the fundamental quantum
processes that govern electron transport on the molecular scale.
Historically, the hour of birth of molecular electronics devices was a the-
oretical paper [1] that appeared in 1974, in which the authors devised a
rectifler based on a single organic molecule. This molecule consisted of two
electronic …-systems, which played the role of donor and acceptor and were
separated by an aliphatic bridge. Since then, a growing number of scientists
has investigated the conductance properties of molecules using various the-
oretical techniques [2]. The flrst experimental single molecule junction was
realized in 1997 [3].
Fromachemist’spointofview,’molecularconductance’canbeconsidered
asthecontinuationofconceptswellknownfromtheoreticalandexperimental
studies of charge transfer in donor-bridge-acceptor systems [4]. The major
difierence is the fact that in molecular junctions donor and acceptor states
are no longer localized on some part of the molecule, but delocalized in
metal electrodes, while the actual molecule forms the bridge. Therefore, in
the context of molecular conductance, the term charge transport rather than
charge transfer is used.
3


m m




Figure 1.1: Energy level scheme of a molecular junction at equilibrium.
To discuss the basic mechanism of charge transport through single
molecules, Fig.1.1 shows the energy level scheme of a molecular junction.
The left and right metal electrodes are characterized by their chemical po-
tentials, „ and „ , and their Fermi distributions. The electrodes are chem-L R
ically bound to a molecule, which is described by discrete electronic states
that couple to the continuum of electronic states in the metallic electrodes.
If no bias voltage is applied to the junction, the two electrodes are in equi-
librium and their chemical potentials are equal to each other and to the
Fermi energy † . In this situation, the occupied molecular levels are locatedf
below the Fermi level, whereas the uno states are located
above. Fig.1.1 shows the situation at temperature T=0K, where the Fermi
distribution corresponds to a step function.
If a (direct) voltageU is applied, the chemical potentials of the electrodes
are shifted to „ = † ¡eU=2 and „ = † +eU=2, where e is the electronL f R f
¡19charge (1:6¢10 C), and where we assumed that the voltage drops symmet-
rically at both molecule-electrode interfaces. In principal, also the molecular
stateswillbeshiftedbytheappliedbiasvoltage(Starkefiect)andtheycould
be manipulated by an additional gate electrode.
Atlowvoltages,carriertransportispossibleonlythroughdirecttunneling
between left and right electrode. Because of its low current, this region is
referred to as the conductance gap. Resonant carrier transport starts as soon
as the chemical potential of one electrode equals the energy of the highest
occupied molecular orbital (HOMO) (Fig.1.2 left) or the lowest unoccupied
molecular orbital (LUMO) (Fig.1.2 right). While in the flrst case a hole
tunnels from the left electrode via the HOMO of the molecule to the right
electrode, in the second case an electron tunnels from the right electrode via
4

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