Power Semiconductors Jan

Description

SKW25N120 Power Semiconductors 1 Jan-02 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode G C E • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability Type VCE IC Eoff Tj Package Ordering Code SKW25N120 1200V 25A 2.9mJ 150°C TO-247AC Q67040-S4282 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VC E 1200 V DC collector current TC = 25°C TC = 100°C IC 46 25 Pulsed collector current, tp limited by Tjmax IC p u l s 84 Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C - 84 Diode forward current TC = 25°C TC = 100°C IF 42 25 Diode pulsed current, tp limited by Tjmax IF p u l s 80 A Gate-emitter voltage VG E ±20 V Short circuit withstand time1) VGE = 15V, 100V≤VCC ≤1200V, Tj ≤ 150°C tS C 10 µs Power dissipation TC = 25°C P t o t 313 W Operating junction and storage temperature T j , T s t g -55...+150 Soldering temperature, 1.6mm (0.063 in.

• symbol conditions


• switching characteristic


• emitter voltage


• time between


• collector emitter


• collector current


• diode


• anti-parallel diode

Sujets

• Bipolar junction transistor

Informations

• Publié par: pefav
• Nombre de lectures: 41
• Langue: English

Extrait

SKW25N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Em C Con diode
 40% lower E off  compared to previous generation
 Short circuit withstand time – 10  s
 Designed for: G - Motor controls E - Inverter - SMPS
 NPT-Technology offers: - very tight parameter distribution - -     p hi a g r h a   ll r e u l  g s g w e i d tc n h e i s n s g ,    t c e ap m a p b e i r li a t t y ure stable behaviour TypeV CE I C E off T j Package SKW25N1201200V25A2.9mJ 150  C TO-247AC Maximum Ratings ParameterSymbol Collector-emitter voltageV CE DC collector currentI C T C  = 25  C T C  = 100  C Pulsed collector current, t p  limited by T jmax I Cpuls Turn off safe operating area - V CE   1200V, T j     150  C Diode forward currentI F T C  = 25  C T C  = 100  C Diode pulsed current, t p  limited by T jmax I Fpuls Gate-emitter voltageV GE Short circuit withstand time 1) t SC V GE  = 15V, 100V  V CC  1200V, T j     150  C Power dissipationP tot T C  = 25  C Operating junction and storage temperatureT j , T stg Soldering temperature, 1.6mm (0.063 in.) from case for 10s- )1   P A o lol w w e e  r  d S un e m mi b c re o o  n f d s  u h c o t r o  t r c s riciust :<010;0t mi eebtewne 1 s ohr tcriciust :1>s. Ordering Code Q67040-S4282 eulaV 0021 64 52 48 48 24 52 08 02  01 313 -55...+150 062 Utin V A V  s W C  Jna-20