Epitaxial graphene on silicon carbide surfaces [Elektronische Ressource] : growth, characterization, doping and hydrogen intercalation = (Epitaktisches Graphen auf Siliziumkarbid-Oberflächen) / vorgelegt von Christian Riedl

DerEpitaxialrer.GrapheneErlangen-N?rnbonausSiliconderCadesrbidevonSurfaces:assersto-InterkGroFwth,riedrich-Chazurracterization,rgradesDopingvoandRHydrogenergIntercalationalation)(NaturwissenschaftlichenEpitaktischesakult?tGraphenFaufAlexander-Universit?tSiliziumkergaErlangungrbid-ObDoktoer?chen:Dr.Wnat.achstum,rgelegtChaChristianrakterisierung,iedlDotierungN?rnbundWErstbAlsDrittbDissertationZwgenehmigtEbvonUlrichderDr.Naturwissen-KaschaftlichenrdFPriv.-Doz.akult?trkdererichterstatter:FMagerriedrich-Alexander-Universit?tProf.Erlangen-N?rnbHoergerhaTB?nschagerichterstatter:derDr.m?ndlichenStaPr?fung:e09.07.2010eitbVProf.oAndreasrsitzenderldererichterstatter:PromotionskDr.ommission:rstenProf.rnDr.p p3 3p p3 31.Intro.duction.toiiigraphene......as.1...racterization...ion.the.......The.level.epitaxial.the.66.72.......Si.....material...y...(6..5y2.1.1.Graphene.physics....fo.....a.............5.1...............4.2..r...The.la.....The.6..5.2.1.2identicationSynthesis.of.graphene54.sp.....The.....4.3.3.t.la.63.l...y.......ectroscop.......Conclusion.........V.gro14of2.2.Silicon.ca.rbide5.1.1as.a90templateefo.r.epitaxial.graphene..........(6.6.graphene.p.graphitization.....44.erio.the.er..16.2.2.1.SiC.crystal44structureof.2.Intro.......51.wth.graphene.s.........Co.ele.y.........54.structure...........ngerp17the2.2.2rminationSiCersurfacesers...STM.epitaxi.on.....Homo.the.ne...........Raman...............74.................
Publié le : vendredi 1 janvier 2010
Lecture(s) : 17
Tags :
Source : D-NB.INFO/1006640193/34
Nombre de pages : 173
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DerEpitaxialrer.GrapheneErlangen-N?rnbonausSiliconderCadesrbidevonSurfaces:assersto-InterkGroFwth,riedrich-Chazurracterization,rgradesDopingvoandRHydrogenergIntercalationalation)(NaturwissenschaftlichenEpitaktischesakult?tGraphenFaufAlexander-Universit?tSiliziumkergaErlangungrbid-ObDoktoer?chen:Dr.Wnat.achstum,rgelegtChaChristianrakterisierung,iedlDotierungN?rnbundWErstbAlsDrittbDissertationZwgenehmigtEbvonUlrichderDr.Naturwissen-KaschaftlichenrdFPriv.-Doz.akult?trkdererichterstatter:FMagerriedrich-Alexander-Universit?tProf.Erlangen-N?rnbHoergerhaTB?nschagerichterstatter:derDr.m?ndlichenStaPr?fung:e09.07.2010eitbVProf.oAndreasrsitzenderldererichterstatter:PromotionskDr.ommission:rstenProf.rnDr.p p
3 3
p p
3 3
1
.Intro.duction.toiiigraphene......as.1...racterization...ion.the.......The.level.epitaxial.the.66.72.......Si.....material...y...(6..5y2.1.1.Graphene.physics....fo.....a.............5.1...............4.2..r...The.la.....The.6..5.2.1.2identicationSynthesis.of.graphene54.sp.....The.....4.3.3.t.la.63.l...y.......ectroscop.......Conclusion.........V.gro14of2.2.Silicon.ca.rbide5.1.1as.a90templateefo.r.epitaxial.graphene..........(6.6.graphene.p.graphitization.....44.erio.the.er..16.2.2.1.SiC.crystal44structureof.2.Intro.......51.wth.graphene.s.........Co.ele.y.........54.structure...........ngerp17the2.2.2rminationSiCersurfacesers...STM.epitaxi.on.....Homo.the.ne...........Raman...............74..................20863riaExptheerimentalconditionsbackgrounda23SiC3.1.Investigation.metho.ds........graphene.Contents.....Inuence.olyt.................................43.The.5.new.a.)R3023phase3.1.1aLorecursowofenergy.electron.diraction.(LEED).and.mic.roscop4.2.1yp(LEEM)dicit.of.interface.y....24.3.1.2.Scanning.p.rob.e.microscop.y..4.2.2.nature.the.Epitaxial.1.duction.)R30.reconstruction.............4.3.gro.and.of.la.er........27.3.1.3.Photo.electron.sp.ectroscop4.3.1yre.photo.ctron.ectroscop.....................4.3.2.band.of.graphene..............30.3.1.457RamanLEEDsprintsectroscopryde.e.of.numb.of.y.......4.3.4.cha.of.a.graphene.SiC(0001).........4.3.5.geneit.of.gr.phe.lms........35.3.2.Samples........4.3.6.Sp.y.............................4.4..................................37.3.3.Exp5erimentalasetuptandofsamplegraphenepwthrepa89rationV.riation.the.substrate......................2.1.)..90.Epitaxial.on.C(000..............38.4.Cha.racterization.of.e5.1.2pofitaxialpgrapheneypon.SiC(0001).43.4.1.The.phase.diagram.of.SiC(0001)..........95...5.1.3ZusammenfassungNoepitaxialn.-.b.asal.plane6.1.2SiCthesurfac.es......b...means.....w.122.............A.Bi.....hole.....Decoupling96.5.2.Vdrogena.riation.ofintercalationthe.gro.wthConclusiontechnique........Summa.Publications.......110.hole.means.Sb.........lecula.b.F4-TCNQ.......112.graphene.substrate100.5.2.1.Ca.rb6.2.1onbevapgrapheneo.ration.in.UHVGolconditionselo.........135...................137.141.Bibliography..100.5.2.2.Gr.a.phi.tiza.ti.on6.1.1oftomicSiC(0001)dopinginyanofaandrgon.atmosphere..............111.Mo.r.doping.y104of5.3.Conclusion..............6.2.epitaxial.from.SiC...............122.Hy.intercalation.elo.epitaxial...............6.2.2.d.b.w.graphene......106.6.T.uning.the.material6.3p.rop.erties.of.epitaxial.gra.phene.on.SiC(0001).109.6.1.Hole.doping.of.epitaxial.graphene........7.ry.8.145.149.163.s p
3sp
2sp pz

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