8September

Stmicroelectronics

Description

Niveau: Secondaire, Lycée, Terminale
1/8September 2001 . STE250NS10 N-CHANNEL 100V - 0.0045 ? - 220A ISOTOP STripFET™ POWER MOSFET n TYPICAL RDS(on) = 0.0045? n STANDARD THRESHOLD DRIVE n 100% AVALANCHE TESTED APPLICATIONS n SMPS & UPS n MOTOR CONTROL n WELDING EQUIPMENT n OUTPUT STAGE FOR PWM, ULTRASONIC CIRCUITS TYPE VDSS RDS(on) ID STE250NS10 100 V <0.0055 ? 220A ABSOLUTE MAXIMUM RATINGS (•) Pulse width limited by safe operating area. (1 )ISD ≤220A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 100 V VDGR Drain-gate Voltage (RGS = 20 k?) 100 V VGS Gate- source Voltage ± 20 V ID Drain Current (continuos) at TC = 25°C 220 A ID Drain Current (continuos) at TC = 100°C 156 A IDM(•) Drain Current (pulsed) 880 A Ptot Total Dissipation at TC = 25°C 500 W Derating Factor 4 W/°C dv/dt (1) Peak Diode Recovery voltage slope 3.5 V/ns VISO Insulation Withstand Voltage (AC-RMS) 2500 V Tstg Storage Temperature -55 to 150 °C Tj Operating Junction Temperature 150 °C ISOTOP INTERNAL SCHEMATIC DIAGRAM

• electrical characteristics


• drain current


• operating junction


• gate voltage


• ns ns


• µa

Sujets

• Première
• Rating
• Reverse
• Threshold voltage

Informations

• Publié par: profil-zyan-2012
• Nombre de lectures: 22

Extrait

TYPE

V DSS

STE250NS10 N-CHANNEL 100V - 0.0045W- 220A ISOTOP STripFETŽ POWER MOSFET

R DS(on)

STE250NS10 100 V <0.0055 W n TYPICAL R DS (on) = 0.0045W n STANDARD THRESHOLD DRIVE n 100% AVALANCHE TESTED

I D

220A

APPLICATIONS n SMPS & UPS n MOTOR CONTROL n WELDING EQUIPMENT n OUTPUT STAGE FOR PWM, ULTRASONIC CIRCUITS

ABSOLUTE MAXIMUM RATINGS Symbol Parameter V DS Drain-source Voltage (V GS = 0) W V DGR Drain-gate Voltage (R GS )= 20 k V GS Gate- source Voltage I D Drain Current (continuos) at T C = 25°C I D Drain Current (continuos) at T C = 100°C ·! I DM Current (pulsed) ( Drain P tot Total Dissipation at T C = 25°C Derating Factor (1) dv/dt Peak Diode Recovery voltage slope V ISO Insulation Withstand Voltage (AC-RMS) T stg Storage Temperature T j Operating Junction Temperature (·! Pulse width limited by safe operating area.

September 2001 .

ISOTOP

INTERNAL SCHEMATIC DIAGRAM

Value Unit 100 V 100 V ± 20 V 220 A 156 A 880 A 500 W 4 W/°C 3.5 V/ns 2500 V -55 to 150 °C 150 °C (1 )I £ 220A, di/dt £ 200A/µs, V £ TV , £ T SD DD (BR)DSS j JMAX .

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