BTA16 BW CW BTB16 BW CW
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Description

Niveau: Secondaire, Lycée, Terminale
BTA16 BW/CW BTB16 BW/CW March 1995 SNUBBERLESS TRIACS Symbol Parameter Value Unit IT(RMS) RMS on-state current (360° conduction angle) BTA Tc = 80 °C 16 A BTB Tc = 90 °C ITSM Non repetitive surge peak on-state current ( Tj initial = 25°C ) tp = 8.3 ms 170 A tp = 10 ms 160 I2t I2t value tp = 10 ms 128 A2s dI/dt Critical rate of rise of on-state current Gate supply : IG = 500mA diG/dt = 1A/µs Repetitive F = 50 Hz 20 A/µs Non Repetitive 100 Tstg Tj Storage and operating junction temperature range - 40 to + 150 - 40 to + 125 °C °C Tl Maximum lead temperature for soldering during 10 s at 4.5 mm from case 260 °C TO220AB (Plastic) A1 A2 G .HIGH COMMUTATION : (dI/dt)c > 14A/ms without snubber .HIGH SURGE CURRENT : ITSM = 160A .VDRM UP TO 800V .BTA Family : INSULATING VOLTAGE = 2500V(RMS)(UL RECOGNIZED : E81734) DESCRIPTION Symbol Parameter BTA / BTB16-... BW/CW Unit 400 600 700 800 VDRM VRRM Repetitive peak off-state voltage Tj = 125 °C 400 600 700 800 V ABSOLUTE RATINGS (limiting values) FEATURES The BTA/BTB16 BW/CW triac family are high per- formance glass

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Extrait

Tstg Tj Tl
Storage and operating junction temperature range
V Repetitivepeak off-state voltage DRM V Tj= 125°C RRM
BTA16 BW/CW BTB16 BW/CW
- 40 to+ 150 - 40 to+ 125 260
SNUBBERLESS TRIACS
Non Repetitive
Maximum lead temperature for solderingduring 10 s at4.5 mm from case
March 1995
1/5
Unit A
2 A s A/ms
°C °C °C
FEATURES . HIGH COMMUTATION : (dI/dt)c > 14A/ms without snubber HIGH SURGE CURRENT : I= 160A TSM V UPTO 800V DRM . BTA Family : INSULATING VOLTAGE = 2500V (RMS) (UL RECOGNIZED : E81734)
DESCRIPTION A1 A2 The BTA/BTB16BW/CW triac family are high per-G formance glass passivated chips technology. The SNUBBERLESS]concept offer suppression TO220AB of RC network and it is suitable for application (Plastic) such as phase control and static switching on in-ductive or resistive load. ABSOLUTE RATINGS(limiting values) Symbol ParameterValue I RMSon-state currentBTA Tc= 80°C 16 T(RMS) (360°conduction angle) BTB Tc= 90°C I Nonrepetitive surge peak on-state currenttp = 8.3 ms170 TSM ( Tjinitial = 25°C ) tp = 10 ms160 2 2 I tI tvalue tp= 10 ms128 dI/dt Criticalrate ofrise of on-state currentRepetitive 20 Gate supply : I= 500mAdi /dt= 1A/m= 50 Hzs F G G
BTA / BTB16-... BW/CW 400 600 700 800 400 600 700 800
Unit
V
A
100
Symbol
Parameter
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