Niveau: Secondaire, Lycée, Terminale
Si4840DY Vishay Siliconix Document Number: 71188 S-03950—Rev. B, 16-May-03 2-1 N-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) () ID (A) 40 0.009 @ VGS = 10 V 14 0.012 @ VGS = 4.5 V 12 SO-8 S D S D S D G D5 6 7 8 Top View 2 3 4 1 D G S N-Channel MOSFETOrdering Information: Si4840DYSi4840DY-T1 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 150C)a TA = 25C ID 14 10 TA = 70C 11 8 A Pulsed Drain Current IDM 50 Continuous Source Current (Diode Conduction)a IS 2.8 1.4 Maximum Power Dissipationa TA = 25C PD 3.1 1.56 W TA = 70C 2.0 1.0 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit M i J ti t A bi ta t 10 sec R 33 40 ax mum unc on- o- m en Steady State thJA 65 80 C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 17 21
- zero gate
- gate charge
- storage temperature
- gate-drain charge
- source-drain reverse
- diode forward
- delay time
- typical characteristics
- voltage vgs