N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

Sgs-Thomson Microelectronics

Description

Niveau: Secondaire, Lycée, Terminale
STP50N06 STP50N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR n TYPICAL RDS(on) = 0.022 ? n AVALANCHE RUGGED TECHNOLOGY n 100% AVALANCHE TESTED n REPETITIVE AVALANCHE DATA AT 100oC n LOW GATE CHARGE n HIGH CURRENT CAPABILITY n 175oC OPERATING TEMPERATURE n APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS n HIGH CURRENT, HIGH SPEED SWITCHING n SOLENOID AND RELAY DRIVERS n REGULATORS n DC-DC & DC-AC CONVERTERS n MOTOR CONTROL, AUDIO AMPLIFIERS n AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) INTERNAL SCHEMATIC DIAGRAM TO-220 ISOWATT220 July 1993 TYPE VDSS RDS(on) ID STP50N06 STP50N06FI 60 V 60 V < 0.028 ? < 0.028 ? 50 A 27 A ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP50N06 STP50N06FI VDS Drain-source Voltage (VGS = 0) 60 V VDG R Drain- gate Voltage (RGS = 20 k?) 60 V VGS Gate-source Voltage ± 20 V ID Drain Current (cont inuous) at Tc = 25 oC 50 27 A ID Drain Current (cont inuous) at Tc = 100 oC 35 19 A IDM(•) Drain Current (pulsed) 200 200 A Ptot Total Dissipation at Tc = 25 oC 150 45 W Derating Factor 1 0.3 W/oC VISO Insulat ion Withstand Voltage (DC) ? 2000 V Tstg Storage Temperature -65 to 175 oC Tj Max.

• avalanche characteristics


• drain current


• gate-drain charge


• gate voltage


• pf


• µa

Sujets

• Première
• Rating
• Reverse
• Thermal
• Threshold voltage

Informations

• Publié par: profil-zyan-2012
• Nombre de lectures: 24

Extrait

STP50N06

APPLICATIONS n HIGH CURRENT, HIGH SPEED SWITCHING n SOLENOID AND RELAY DRIVERS n REGULATORS n DC-DC & DC-AC CONVERTERS n MOTOR CONTROL, AUDIO AMPLIFIERS n AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)

Unit

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

R DS ( on) < 0.028W < 0.028W

V DSS 60 V 60 V

I D 50 A 27 A

STP50N06 STP50N06FI

50 35 200 150 1 '

3 2 1

3 2 1

INTERNAL SCHEMATIC DIAGRAM

1/10

TO-220

TYPE STP50N06 STP50N06FI

n TYPICAL R DS(on) = 0.022W n AVALANCHE RUGGED TECHNOLOGY n 100% AVALANCHE TESTED o n REPETITIVE AVALANCHE DATA AT 100 C n LOW GATE CHARGE n HIGH CURRENT CAPABILITY o n 175 C OPERATING TEMPERATURE n APPLICATION ORIENTED CHARACTERIZATION

ABSOLUTE MAXIMUM RATINGS

Parameter

-65 to 175 175

Symb ol

July 1993

V D S Voltage (VDrain-sour ce G S = 0) V DG R Drain- gate Voltage (R GS = 20 kW) V G S Gate-source Voltage o I D Drain Current (cont Tinuous) at c C= 25 o I D Tinuous) at Drain Current (cont c C= 100 I D M (w) Drain Current (pulsed) o P tot T otal Dissipation at T c C= 25 Derating F actor V ISO I nsulat ion Withstand Voltage (DC) T stg Temperat ureSt orage T j eing Junction Temperatur Max. Operat (wwidth limited by safe operating area) Pulse

Val ue ST P50N06FI 60 60 #20 27 19 200 45 0.3 2000

V V V A A A W o W/ C V o C o C

ISOWATT220