Réalisation de circuits imprimés EXTRA1

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Réalisation de circuits imprimés – EXTRA1 – 1996 / 2002 Thierry LEQUEU – Novembre 2000 – [DATA076] – Fichier : PROJETS-EXTRA1.DOC – Page 9 Projet 3 - GRADATOR / Gradateur à TRIAC Projet : EXTRA1 Info : [DATA216] Révision : novembre 2000 Figure 3.1. Vue du circuit imprimé (images-composants\xx.jpg). 3.1 Liste des documents - Allure des principaux composants. - Prix du montage. - Schéma ORCAD ver 9.x. - Circuit imprimé LAYOUT. - Documentation du HEF4049B. 3.2 Liste des composants Tableau 3.3. Liste de composants (Projets-EXTRA1.xls / GRADATOR). No Quantité Référence Désignation Empreinte 1 4 C1,C2,C3,C4 100nF 400V C6PAS 2 1 C5 470pF 400V C6PAS 3 1 D1 DIAC 32V DO41 4 1 JP3 230V 2PL2 5 1 L1 150uH SELF220 6 1 Q1 BTA16-600 3PL2 7 1 R1 100 1W R14PAS 8 1 R2 470K 3PL2 9 1 R3 180K RC05 10 1 R4 150K RC05 11 1 R5 100 RC05

  • cw btb12

  • tstg tj

  • projets-extra1

  • i2t i2t

  • formance glass passivated

  • extra1 info

  • triac projet

  • repetitive peak off


Publié le : mercredi 1 novembre 2000
Lecture(s) : 44
Tags :
Source : thierry-lequeu.fr
Nombre de pages : 8
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Projet 3  GRADATOR / Gradateur à TRIAC
: EXTRA1 : [DATA216] : novembre 2000
3.1Liste des documents Allure des principaux composants. Prix du montage. Schéma ORCAD ver 9.x. Circuit imprimé LAYOUT. Documentation du HEF4049B.
Réalisation de circuits imprimés – EXTRA1 – 1996 / 2002
Projet Info Révision
Figure 3.1. Vue du circuit imprimé (imagescomposants\xx.jpg).
Thierry LEQUEU – Novembre 2000 – [DATA076] – Fichier : PROJETSEXTRA1.DOC – Page 9
Liste des composants Tableau 3.3. Liste de composants (ProjetsEXTRA1.xls / GRADATOR). No Quantité Référence Désignation Empreinte 1 4 C1,C2,C3,C4 100nF 400V C6PAS 2 1 C5 470pF 400V C6PAS 3 1 D1 DIAC 32V DO41 4 1 JP3 230V 2PL2 5 1 L1 150uH SELF220 6 1 Q1 BTA16600 3PL2 7 1 R1 100 1W R14PAS 8 1 R2 470K 3PL2 9 1 R3 180K RC05 10 1 R4 150K RC05 11 1 R5 100 RC05
3.2
JP3 1 2 230V 2PL2
L1
150uH SELF220
C1 100nF 400V C6PAS
R4 150K RC05
R3
180K RC05 C2 100nF 400V C6PAs
2
R2 470K 3PL2
D1
DIAC 32V DO41 C3 100nF 400V C6PAS
R5 100 RC05
C5 470pF 400V CK05
3
Auteur : Thierry LEQUEU
Size A
Date:
Document Number
Q1 BTA16600 3PL2
Gradateur 220 V / 500W
Wednesday, November 22, 2000
Sheet
1
C4 100nF 400V C6PAS
R1 100 1W R14PAS
of
1
Rev 1
400
600
SNUBBERLESS TRIACS
BW/CW BW/CW
20
Non Repetitive
260
Maximum lead temperature for soldering during 10 s at 4.5 mm from case
BTA12 BTB12
Repetitive peak off-state voltage Tj = 125°C
V DRM V RRM
Symbol
Tstg Tj
Tl
dI/dt
DESCRIPTION The BTA/BTB12 BW/CW triac family are high per-formance glass passivated chips technology. The SNUBBERLESS]concept offer suppression of RC network and it is suitable for application such as phase control and static switching on in-ductive or resistive load. ABSOLUTE RATINGS(limiting values)
March 1995
I TSM
2 I t value
126
72
120
Symbol
Parameter
Unit
800
V
800
Value
A1 A2 G
Critical rate of rise of on-state current Gate supply : I = 500mA di /dt = 1A/ms G G
Non repetitive surge peak on-state current ( Tj initial = 25°C )
FEATURES . HIGH COMMUTATION : (dI/dt)c > 12A/ms without snubber HIGH SURGE CURRENT : I = 120A TSM V UP TO 800V DRM .INSULATING VOLTAGE = 2500V(RMS) BTA Family : (UL RECOGNIZED : E81734)
TO220AB (Plastic)
1/5
700
2 I t
Tc = 85°C
Tc = 95°C
tp = 10 ms
Repetitive F = 50 Hz
BTA
12
A/ms
°C °C
°C
I T(RMS)
RMS on-state current (360°conduction angle)
A
Unit
2 A s
A
tp = 10 ms
100
- 40 to + 150 - 40 to + 125
600
Storage and operating junction temperature range
Parameter
400
BTA / BTB12-... BW/CW
700
BTB
tp = 8.3 ms
12
24
13
MIN
Tj=125°C
TYP
6.5
35
80
V/ms
A/ms
mA
50
-
-
mA
250
500
mA
50
40
MIN
2
BTB
2/5
MAX
1.60
TYP
TYP
Tj=25°C
I-III
BTA
3.3
2.0
BW
°C/W
Linear slope up to V =67%V D DRM gate open
tp= 380ms
I =1.2 I G GT
I = 17A TM
V * TM
Parameter
V =12V D
V =12V D
V =V I = 500mA D DRM G dI /dt = 3A/ms G
I GT
I L
(dI/dt)c *
Without snubber
R =33W L
R =33W L
(DC)
I-II-III
Junction to ambient
Tj=25°C
Rth (j-a)
I DRM I RRM
V DRM V RRM
(DC)
V =V D DRM
R =3.3kW L
Unit
35
1.5
2
0.2
CW
Suffix
mA
V
V
Unit
ms
1
Rth (j-c) AC
BTA12 BW/CW / BTB12 BW/CW
Symbol
V GD
V GT
tgt
Symbol
Test Conditions
°C/W
°C/W
750
TYP
MAX
2
-
MAX
MAX
MIN
500
0.01
II
MAX
50
MAX
80
-
dV/dt *
II
I-III
Tj=125°C
Tj=125°C
Tj=25°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=25°C
* For either polarity of electrode A2 voltage with reference to electrode A1.
Tj=25°C
GATE CHARACTERISTICS(maximum values) P = 1W P = 10W (tp = 20m= 20= 4A (tp s) I ms) G (AV) GM GM ELECTRICAL CHARACTERISTICS
I = 500mA T
I * H
Rth (j-c)
THERMAL RESISTANCES
I-II-III
I-II-III
I-II-III
Quadrant
V = 16V (tp = 20ms). GM
Junction to case for 360°conduction angle ( F= 50 Hz)
DC Junction to case for DC
60
Value
V
MAX
MIN
MAX
TYP
2.5
Rated Rated
2.7
BTB
BTA
gate open
400
150
April 1995
Rth (j-l)
2
A
Junction-leads
°C/W
Rth (j-a)
Symbol
P
ITRM
DB3 /DB4 / DC34
)
FEATURES VBO: 32V / 34V / 40V VERSIONS LOW BREAKOVER CURRENT
Unit
THERMAL RESISTANCES
Parameter
Repetitive peak on-state curren t
Power dissipation on printed circuit (L = 10 mm)
Parameter
1/4
Value
Value
tp = 20ms F= 100 Hz
- 40 to + 125 - 40 to + 125
TRIGGER DIODES
Symbol
Tstg Tj
150
Storage and o perating junction temperature range
Unit
mW
°C °C
Ta = 65°C
ABSOLUTE RATINGS(limiting values)
DESCRIPTION High reliab ility g lass pa ssivatio n insu ring parame ter sta bility a nd p ro tection a ga in st junction con taminatio n.
DO 35 (Glass)
Junction to a mbient
°C/W
MIN
28
DB3
Test Conditions
220 V 50 Hz
MAX
Parameter
ELECTRICAL CHARACTERISTICS
Breakover voltage symmetry
Symbol
Breakover current *
Rise time *
see diagram 2
see diagram 3
C = 22nF **
100
V
0,5 V BO V
V
V
IBLeakage current * VB= 0.5 VBOmax see diagram 1 * Electrical characteristic applicable in both forward and reverse directions. ** Connected in parallel with the devices.
45
0.1 F
VO
MAX
MIN
30
+ V
DC34
2/4
t r
TYP
D.U.T
C = 22nF ** see diagram 1
DIAGRAM 3 :Test circuit see diagram 2. Adjust R for lp=0.5A
500 k
C = 22nF ** see diagram 1
DB3 / DB4 / DC34
32
(Tj = 25°C)
I BO I B
V BO
10 k
MAX
MIN
MAX
TYP
DIAGRAM 1 :Current-voltage characteristics
Value
mA
V
35
DB4
R = 20
mA
ms
DIAGRAM 2 :Test circuit for output voltage
40
Unit
34
VBO
10
DI = [IBOto IF=10mA] see diagram 1
tr
IDV±I
VO
IBO
[I+VBOI-I-VBOI]
Output voltage *
Dynamic breakover voltage *
Breakover voltage *
10 %
90 %
)
10mA
+ I F
lp
- V
- I F
100
50
1.5
36
38
5
±3
5
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