APT website http: www advancedpower com

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Niveau: Supérieur, Doctorat, Bac+8
APTM20DUM04 A PT M 20 D U M 04 – R ev 1 M ay , 2 00 4 APT website – 1 – 6 D2G1 S1 S G2 D1 S2 Absolute maximum ratings These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 200 V Tc = 25°C 372 ID Continuous Drain Current Tc = 80°C 278 IDM Pulsed Drain current 1488 A VGS Gate - Source Voltage ±30 V RDSon Drain - Source ON Resistance 4 m PD Maximum Power Dissipation Tc = 25°C 1250 W IAR Avalanche current (repetitive and non repetitive) 100 A EAR Repetitive Avalanche Energy 50 EAS Single Pulse Avalanche Energy 3000 mJ VDSS = 200V RDSon = 4m max @ Tj = 25°C ID = 372A @ Tc = 25°C Application AC Switches Switched Mode Power Supplies Uninterruptible Power Supplies Features Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile Dual common source MOSFET Power Module

  • source voltage

  • gate charge

  • vgs

  • drain current

  • junction temperature

  • low voltage

  • avalanche current


Publié le : mardi 19 juin 2012
Lecture(s) : 76
Source : thierry-lequeu.fr
Nombre de pages : 6
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Dual common source MOSFET Power Module
APTM20DUM04
VDSS= 200V RDSon= 4mmax @ Tj = 25°C ID= 372A @ Tc = 25°C
Application AC Switches Switched Mode Power Supplies Uninterruptible Power Supplies Features ® Power MOS 7MOSFETs - LowRDSon- Lowinput and Miller capacitance - Lowgate charge - Avalancheenergy rated - Veryrugged Kelvin source for easy drive Very low stray inductance - Symmetricaldesign - M5power connectors G1 D1 S D2 High level of integration S1 Benefits S2 Outstanding performance at high frequency operation G2 Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile Absolute maximum ratingsSymbol ParameterMax ratingsUnit VDSS Drain200 V- Source Breakdown Voltage Tc= 25°C372 ID ContinuousDrain Current Tc278 A= 80°C IDM PulsedDrain current1488 VGS- Source Voltage±30 V Gate RDSon- Source ON Resistance Drain4 mPD MaximumPower DissipationTc= 25°C1250 W IAR Avalanchecurrent (repetitive and non repetitive)100 A EAR Repetitive50Avalanche Energy mJ EAS SinglePulse Avalanche Energy3000  TheseDevices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT websitehtt :/www.advanced ower.com1 6
APTM20DUM04 All ratings @ Tj= 25°C unless otherwise specified Electrical Characteristics Symbol CharacteristicTest ConditionsMin Typ Max Unit BVDSS Drain-Source Breakdown VoltageVGS= 0V, ID200 V= 500µA VGS= 0V,VDS= 200VTj= 25°C 200 IDSSGate Voltage Drain Current ZeroµA VGS= 0V,VDS= 160VTj= 125°C 1000 A RDS(on) Drain– Source on ResistanceVGS= 10V, ID= 1864 mVGS(th)VThreshold Voltage GateGS= VDS, ID= 10mA3 5V IGSSV– Source Leakage Current GateGS= ±30V, VDS= 0V±200 nA Dynamic Characteristics Symbol CharacteristicTest ConditionsMin Typ MaxUnit Ciss InputCapacitance VGS28.9= 0V Coss OutputCapacitance VDS9.32 nF= 25V f = 1MHz Crss0.58Transfer Capacitance Reverse Qggate Charge560 Total VGS= 10V Qgs Gate– Source ChargeVBus= 100V212 nC ID= 372A Qgd Gate– Drain Charge268 Td(on) Turn-onDelay TimeInductive switching @ 125°C 32 VGS= 15V TrRise Time64 VBusns= 133V Td(off)Turn-off Delay Time88 ID= 372A TfRFall TimeG= 1.2 116 EonTurn-on Switching Energyching @ 25°C 3396 Inductive swit VGS= 15V, VBusµJ= 133V EoffTurn-off Switching Energy ID= 372A,RG= 1.2 3716 EonTurn-on Switching EnergyInductive switching @ 125°C 3744 VGS= 15V, VBus= 133VµJ E Turn-offSwitching Energy3944 offID= 372A,RG= 1.2Source - Drain diode ratings and characteristics Symbol CharacteristicTest ConditionsMin Typ MaxUnit IS ContinuousTc = 25°CSource current372 A (Body diode)Tc = 80°C278 VSDForward VoltageV DiodeGS= 0V, IS= - 372A1.3 V dv/dt PeakDiode Recovery 5V/ns IS= -372A, VR= 133V trr360 nsRecovery Time Reverse diS/dt = 400A/µs IS= -372A, VR= 133V Qrr ReverseRecovery Charge26.8 µC diS/dt = 400A/µs Eonincludes diode reverse recovery.In accordance with JEDEC standard JESD24-1. dv/dt numbers reflect the limitations of the circuit rather than the device itself. ISdi/dt- 372A700A/µs VRVDSS Tj150°C
APT websitehtt :/www.advanced ower.com
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APTM20DUM04 Thermal and package characteristics Symbol CharacteristicMin Typ Max Unit RthJC Junctionto Case0.1 °C/W VISOLRMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz2500 V TJ-40 150 Operatingjunction temperature range TSTG Storage°C-40 125Temperature Range TCCase Temperature-40 100 Operating To heatsinkM6 35 Torque Mountingtorque N.m For terminalsM5 23.5 Wt PackageWeight 280g Package outline
APT websitehtt :/www.advanced ower.com
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Typical Performance Curve
APTM20DUM04
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.12 0.1 0.9 0.08 0.7 0.06 0.5 0.04 0.3 0.02 SinglePulse 0.1 0.05 0 0.00001 0.00010.001 0.010.1 1 rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics 1400 VGS=15V 1200 10V 1000 9V 800 8.5V 6008V 7.5V 400 7V 200 6.5V 0 0 4 812 16 20 24 28 VDS, Drain to Source Voltage (V)
R vsDrain Current DS(on) 1.2 Normalized to VGS=10V @ 186A .1 1VGS=10V
1
0.9
VGS=20V
0.8 0 100200 300 400 500 600 I ,Drain Current (A) D
Transfert Characteristics 1200 VDS> ID(on)xRDS(on)MAX 1000250µs pulse test @ < 0.5 duty cycle
10
800 600 400 T =25°C J 200 TJ=125°C T =-55°C J 0 0 1 2 3 4 5 6 7 8 910 VGS, Gate to Source Voltage (V)
 DCDrain Current vs Case Temperature 400 350 300 250 200 150 100 50 0 25 50 75100 125 150 TC, Case Temperature (°C)
APT websitehtt :/www.advanced ower.com
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Breakdown Voltage vs Temperature 1.15
1.10
1.05
1.00
0.95
0.90 -50 -250 2550 75100 125 150 T , Junction Temperature (°C) J
Threshold Voltage vs Temperature 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -250 2550 75100 125 150 TC, Case Temperature (°C)
Capacitance vs Drain to Source Voltage 100000 Ciss
10000
1000
Coss
Crss
100 0 1020 30 40 50 VDS, Drain to Source Voltage (V)
APTM20DUM04
ON resistance vs Temperature 2.5 V =10V GS I =186A 2.0 D
1.5
1.0
0.5
0.0 -50 -250 2550 75100 125 150 T , Junction Temperature (°C) J
Maximum Safe Operating Area 10000
1000 limited by RDSon 100µs 100 1ms 10ms 10 100ms Single pulse TJ=150°C 1 1 10100 1000 VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage 14 ID=372A VDS=40V 12 TJ=25°C VDS=100V 10 8 V =160V DS 6 4 2 0 0 80160 240 320 400 480 560 640 Gate Charge (nC)
APT websitehtt :/www.advanced ower.com
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Delay Times vs Current
120 100 80V =133V DS RG=1.260 T =125°C J L=100µH 40
td(off)
td(on)
20 0 0 100200 300 400 500 600 ID, Drain Current (A)
Switching Energy vs Current 8 VDS=133V Eo ff R =1.2G 6TJ=125°C L=100µH Eon 4
2
0 0 100200 300 400 500 600 ID, Drain Current (A)
APTM20DUM04
Rise and Fall times vs Current 160 VDS=133V 140 RG=1.2T =125°C 120 tf J L=100µH 100 80 tr 60 40 20 0 0 100200 300 400 500 600 ID, Drain Current (A)
Switching Energy vs Gate Resistance 12 V =133V DS ID=372A 10 E off T =125°C J L=100µH 8
6
4
Eon
2 0 2.5 5 7.510 12.5 Gate Resistance (Ohms)
 OperatingFrequency vs Drain CurrentSource to Drain Diode Forward Voltage 350 1000 TJ=150°C V =133V DS 300 D=50% R =1.2G 250 TJ=125°C100 TJ=25°C 200 150 10 100 50 0 1 50 100150 200 250 300 3500.2 0.4 0.6 0.81 1.21.4 1.6 1.8 I ,Drain Current (A)ltage (V) DVSD, Source to Drain Vo APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,8105,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058and foreign patents.U.S and Foreign patents pending.All Rights Reserved. APT websitehtt :/www.advanced ower.com6 6
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