APT website http: www advancedpower com

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Niveau: Supérieur, Doctorat, Bac+8
APTM10DAM02 A PT M 10 D A M 02 – R ev 0 M ay , 2 00 5 APT website – 1 - 6 G2 S2 VBUS 0/VBUS CR1 OUT Q2 OUT0/VBUSVBUS G2 S2 Absolute maximum ratings These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 100 V Tc = 25°C 495 ID Continuous Drain Current Tc = 80°C 370 IDM Pulsed Drain current 1900 A VGS Gate - Source Voltage ±30 V RDSon Drain - Source ON Resistance 2.5 m? PD Maximum Power Dissipation Tc = 25°C 1250 W IAR Avalanche current (repetitive and non repetitive) 100 A EAR Repetitive Avalanche Energy 50 EAS Single Pulse Avalanche Energy 3000 mJ VDSS = 100V RDSon = 2.25m? typ @ Tj = 25°C ID = 495A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile Boost chopper MOSFET Power Module

  • source voltage

  • gate charge

  • vgs

  • drain current

  • junction temperature

  • low voltage

  • maximum effective

  • package characteristics

  • avalanche current


Publié le : mardi 19 juin 2012
Lecture(s) : 73
Source : thierry-lequeu.fr
Nombre de pages : 6
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APTM10DAM02
VDSS= 100V oos choppe RDSon= 2.25mtyp @ Tj = 25°C MOSFET Power Module ID= 495A @ Tc = 25°C Applicatio VBUS AC and DC motor control CR1 Switched Mode Power Supplies Power Factor Correction OUT Features Q2 ® Power MOS VMOSFETs -Low RDSonG2 -Low input and Miller capacitance -Low gate charge S2-Avalanche energy rated 0/VBUS -Very rugged Kelvin source for easy drive Very low stray inductance -Symmetrical design -M5 power connectors High level of integration V BUS0/VBUS OUT Benefits S2 G2 Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile Absolute maximumratingsymbol ParameterMa ratingsUnit VDSS- Source Breakdown Voltage100 V Drain Tc= 25°C495 ID ContinuousDrain Current Tc= 80°C370 A IDM1900Drain current Pulsed VGS Gate- Source Voltage±30 V RDSon- Source ON Resistance Drain2.5 mPDT MaximumPower Dissipationc= 25°C1250 W IAR100 Acurrent (repetitive and non repetitive) Avalanche EAR50Avalanche Energy Repetitive mJ EAS SinglePulse Avalanche Energy3000  TheseDevices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT websitehttp:/ www.advancedpower.com
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APTM10DAM02 All ratings @ Tj= 25°C unless otherwise specifiedElectrical Characteristics Symbol CharacteristicTest ConditionsMin Typ MaxUnit VGSV= 0V,DS= 100VTj= 25°C400 IDSSGate Voltage Drain CurrentµA Zero VGS= 0V,VDS= 80V Tj2000= 125°C RDS(on) Drain– Source on ResistanceVGS= 10V, ID2.25 2.5 m= 200AVGS(th)Threshold VoltageV GateGS= VDS, IDV2 4= 10mA IGSSV Gate– Source Leakage CurrentGS= ±30V, VDS±400 nA= 0V Dynamic Characteristics Symbol CharacteristicTest ConditionsMin Typ MaxUnit CissCapacitance V InputGS40= 0V V =25V nF CossCapacitance OutputDS 15.7 f = 1MHz Crss5.9Transfer Capacitance Reverse Qggate Charge1360 Total VGS= 10V Qgs GateV– Source ChargeBus= 50V240 nC ID= 400A Qgd720– Drain Charge Gate Inductive switching Td(on)160 Turn-onDelay Time VGS= 15V TrRise Time240 VBusns= 66V Td(off)Turn-off Delay Time500 ID=400A T FallTime 60 fRG= 1.25 1 Inductive switching @ 25°C Eon Turn-onSwitching EnergyX 2.2 mJ VGS= 15V, VBus= 66V Eoff Turn-offSwitching EnergyY 2.41 ID= 400A,RG=1.25Inductive switching @ 125°C EonSwitching Energy Turn-onX 2.43 VGS= 15V, VBusmJ= 66V Eoff Turn-offSwitching EnergyY 2.56 ID= 400A, RG= 1.25XEonincludes diode reverse recovery.YIn accordance with JEDEC standard JESD24-1. Chopper diode ratings and characteristics Symbol CharacteristicTest ConditionsMin Typ MaxUnit VRRMMaximum Peak Repetitive Reverse VoltageV 200 Tj750= 25°C IRM MaximumReverse Leakage CurrentVR=200V µA Tj1000= 125°C IF(A V)Average Forward Current Maximum50% duty cycle400 ATc = 80°C IF= 400A1 VF800A 1.4Forward Voltage DiodeV IF= IF= 400ATj= 125°C0.9 Tj= 25°C60 trr ReversensRecovery Time IF= 400A Tj= 125°C110 VR= 133V Tj800= 25°C di/dt =800A/µs QrrRecovery ChargenC Reverse Tj3360= 125°C APT websitehttp:/ www.advancedpower.com2 - 6
APTM10DAM02 Thermal and package characteristics Symbol CharacteristicMin TypMax Unit Transistor 0.1 RthJCto Case°C/W Junction Diode 0.14 VISOLRMS Isolation Voltage, any terminal to case t =1 min, I Isol<1mA, 50/60Hz2500 V TJ-40 150junction temperature range Operating °C TSTGTemperature Range-40 125 Storage TC-40 100Case Temperature Operating To heatsinkM6 35 Torque Mountingtorque N.m For terminalsM5 23.5 Wt PackageWeight 280g Package outline(dimensions in mm)
APT websitehttp:/ www.advancedpower.com
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0.001 0.010.1 rectangular Pulse Duration (Seconds)
0.0001
7V 6V
0 0 4 812 16 20 24 28 V ,Drain to Source Voltage (V) DS
APTM10DAM02 Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.12
Single Pulse
VGS=20V
160 T =25°C J 80 T =125°C JT =-55°C J 0 0 1 2 3 4 5 6 7 V ,Gate to Source Voltage (V) GS
100
400
V =15V,10V & 9V GS
300
8V
200
2000
1500
Low Voltage Output Characteristics 2500
0 25 50 75100 125 150 T ,Case Temperature (°C) C
0.8 0 100200 300 400 500 I ,Drain Current (A) D
0.9
1
10
 DCDrain Current vs Case Temperature 500
R vsDrain Current DS(on) 1.2 Normalized to V =10V@ 200A GS 1.1 V =10V GS 1
500
0.1 0.9 0.08 0.7 0.06 0.5 0.04 0.3 0.02 0.1 0.05 0 0.00001
1000
240
Transfert Characteristics 480 V >I (on)xR(on)MAX DS DDS 400250µs pulse test @ < 0.5 duty cycle 320
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APT websitehttp:/ www.advancedpower.com
Breakdown Voltage vs Temperature 1.15
1.10
1.05
1.00
0.95
0.90 -50 -250 2550 75100 125 150 T , Junction Temperature (°C) J
Threshold Voltage vs Temperature 1.2
1.1 1.0
0.9 0.8
0.7 0.6 -50 -250 2550 75100 125 150 T ,Case Temperature (°C) C
Capacitance vs Drain to Source Voltage 100000
10000
Ciss
Coss
Crss
1000 0 1020 30 40 50 V ,Drain to Source Voltage (V) DS
APTM10DAM02
ON resistance vs Temperature 2.5 V =10V GS I =200A 2.0 D
1.5
1.0
0.5
0.0 -50 -250 2550 75100 125 150 T , Junction Temperature(°C) J
Maximum Safe Operating Area 10000
limited by 1000R DS on
100µs
1ms 100 10ms 10 Single pulse T =150°C J 1 1 10100 V ,Drain to Source Voltage (V) DS
Gate Charge vs Gate to Source Voltage 16 I =400A D V =20V 14 DS T =25°C J 12 V =50V DS 10 V =80V DS 8 6 4 2 0 0 400800 12001600 2000 Gate Charge (nC)
APT websitehttp:/ www.advancedpower.com
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600
500
Delay Times vs Current
400V =66V DS R =1.25G 3 0 0TJ=125°C L=100µH 200
100
t d(off )
t d(on)
0 50 150250 350 450 550 650 I ,Drain Current (A) D
Switching Energy vs Current 5 V =66V DS E off RG=1.254 T =125°C J L=100µH E on 3
2
1
0 50 150250 350 450 550 650 I ,Drain Current (A) D
APTM10DAM02
Rise and Fall times vs Current 300
250
200
tr
t f 150 V =66V DS 100 R =1.25G T =125°C J 50 L=100µH 0 50 150250 350 450 550 650 I ,Drain Current (A) D
Switching Energy vs Gate Resistance 9 V =66V DS 8 I =400A D E off T =125°C 7J L=100µH 6 5 4 E on 3 2 1 0 2.5 5 7.510 12.5 15 Gate Resistance (Ohms)
 OperatingFrequency vs Drain Curren Source to Drain Diode Forward Voltage 60 1000 TJ=150°C 50 ZCS ZVS 40 100 T =25°C J 30 Hard V =66V DS switching D=50% 20 10 R =1.25G T =125°C J 10 T =75°C C 0 1 100 200 300 400 5000.3 0.5 0.7 0.9 1.1 1.3 1.5 I ,Drain Current (A)V ,Source to Drain Voltage (V) D SD APT reserves the right to change, without notice, the specifications and information contained herein APT's products arecovered by one or more of U.S patents 4,895,8105,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058and foreign patents.U.S and Foreign patents pending.All Rights Reserved. APT websitehttp:/ www.advancedpower.com6 - 6
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