APT website http: www advancedpower com

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Niveau: Supérieur, Doctorat, Bac+8
APTM10SKM02 A PT M 10 SK M 02 – R ev 0 M ay , 2 00 5 APT website – 1 - 6 Q1 S1 OUT 0/VBUS CR2 VBUS G1 OUTG1 S1 0/VBUSVBUS Absolute maximum ratings These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 100 V Tc = 25°C 495 ID Continuous Drain Current Tc = 80°C 370 IDM Pulsed Drain current 1900 A VGS Gate - Source Voltage ±30 V RDSon Drain - Source ON Resistance 2.5 m? PD Maximum Power Dissipation Tc = 25°C 1250 W IAR Avalanche current (repetitive and non repetitive) 100 A EAR Repetitive Avalanche Energy 50 EAS Single Pulse Avalanche Energy 3000 mJ VDSS = 100V RDSon = 2.25m? typ @ Tj = 25°C ID = 495A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies Features • Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile Buck chopper MOSFET Power Module

  • source voltage

  • gate charge

  • vgs

  • drain current

  • junction temperature

  • low voltage

  • maximum effective

  • package characteristics

  • avalanche current


Publié le : mardi 19 juin 2012
Lecture(s) : 59
Source : thierry-lequeu.fr
Nombre de pages : 6
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APTM10SKM02
VDSS= 100V uck choppe RDSon= 2.25mtyp @ Tj = 25°C MOSFET Power Module ID= 495A @ Tc = 25°C Applicatio VB US Q1 AC and DC motor control Switched Mode Power Supplies G1 Features OUT ® S1 Power MOS VMOSFETs -Low RDSonCR2 -Low input and Miller capacitance -Low gate charge -Avalanche energy rated -Very rugged 0/VBUS Kelvin source for easy drive Very low stray inductance -Symmetrical design -M5 power connectors High level of integration G1 V BUS0/VBUS OUT S1Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile Absolute maximumratingsymbol ParameterMa ratingsUnit VDSS- Source Breakdown Voltage Drain100 V Tc495= 25°C ID ContinuousDrain Current Tc370 A= 80°C IDMDrain current1900 Pulsed VGS±30 V Gate- Source Voltage RDSon- Source ON Resistance2.5 m DrainPDTPower Dissipation Maximumc1250 W= 25°C IAR Avalanchecurrent (repetitive and non repetitive)100 A EARAvalanche Energy Repetitive50 mJ EAS3000 SinglePulse Avalanche Energy  TheseDevices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT websitehttp:/ www.advancedpower.com
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APTM10SKM02 All ratings @ Tj= 25°C unless otherwise specifiedElectrical Characteristics Symbol CharacteristicTest ConditionsMin Typ MaxUnit VGS= 0V,VDS= 100VTj400= 25°C IDSSGate Voltage Drain CurrentµA Zero VGS= 0V,V= 1 T VDS= 80j25°C 2000 RDS(on)– Source on ResistanceV DrainGS= 10V, ID= 200A2.25 2.5 mVGS(th)Threshold Voltage GateVGS= VDS, ID= 10mA2 4V IGSS GateV– Source Leakage CurrentGS= ±30V, VDS= 0V±400 nA Dynamic Characteristics Symbol CharacteristicTest ConditionsMin Typ MaxUnit Ciss InputCapacitance VGS= 0V40 VDSnF= 25V CossCapacitance 15.7 Output f = 1MHz Crss5.9Transfer Capacitance Reverse Qg1360 Totalgate Charge VGS= 10V QgsV– Source Charge GateBus240 nC= 50V ID= 400A Qgd Gate720– Drain Charge Inductive switching Td(on) Turn-onDelay Time160 VGS= 15V Tr240Rise Time VBus= 66Vns Td(off)Turn-off Delay Time500 ID=400A TfFall TimeRG= 1.25 160 Inductive switching @ 25°C EonSwitching Energy Turn-onX 2.2 VGS= 15V, VBus= 66VmJ EoffSwitching Energy Turn-offY 2.41 ID= 400A,RG=1.25Inductive switching @ 125°C EonSwitching Energy Turn-onX 2.43 VGS= 15V, VBus= 66VmJ Eoff Turn-offSwitching EnergyY 2.56 ID= 400A, RG= 1.25XEonincludes diode reverse recovery.YIn accordance with JEDEC standard JESD24-1. Chopper diode ratings and characteristics Symbol CharacteristicTest ConditionsMin Typ MaxUnit VRRMMaximum Peak Repetitive Reverse VoltageV 200 Tj750= 25°C IRM MaximumReverse Leakage CurrentVR=200V µA Tj1000= 125°C IF(A V)Average Forward Current Maximum50% duty cycle400 ATc = 80°C IF= 400A1 V VFIForward Voltage DiodeF= 800A1.4 IFT= 400Aj= 125°C0.9 Tj60= 25°C trrRecovery Time Reversens IF= 400A Tj110= 125°C VR= 133V Tj= 25°C800 di/dt =800A/µs Qrr ReverseRecovery ChargenC Tj= 125°C3360
APT websitehttp:/ www.advancedpower.com
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APTM10SKM02 Thermal and package characteristics Symbol CharacteristicMin TypMax Unit Transistor 0.1 RthJC Junctionto Case°C/W Diode 0.14 VISOLRMS Isolation Voltage, any terminal to case t =1 min, I Isol<1mA, 50/60Hz2500 V TJ-40 150junction temperature range Operating TSTG-40 125Temperature Range Storage°C TC OperatingCase Temperature-40 100 To heatsinkM6 35 Torque Mountingtorque N.m For terminalsM5 23.5 Wt PackageWeight 280g Package outline(dimensions in mm)
APT websitehttp:/ www.advancedpower.com
3 - 6
0 0 4 812 16 20 24 28 V ,Drain to Source Voltage (V) DS
300
400
200
100
8V
V =15V,10V & 9V GS
0.001 0.010.1 rectangular Pulse Duration (Seconds)
Single Pulse
0.0001
7V 6V
160 T =25°C J 80 T =125°C JT =-55°C J 0 0 1 2 3 4 5 6 7 V ,Gate to Source Voltage (V) GS
0.12
VGS=20V
Low Voltage Output Characteristics 2500
1500
2000
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
500
R vsDrain Current DS(on) 1.2 Normalized to V =10V@ 200A GS 1.1 V =10V GS 1
0 25 50 75100 125 150 T ,Case Temperature (°C) C
0.8 0 100200 300 400 500 I ,Drain Current (A) D
0.9
Transfert Characteristics 480 V >I (on)xR(on)MAX DS DDS 400250µs pulse test @ < 0.5 duty cycle 320
240
1
10
 DCDrain Current vs Case Temperature 500
APTM10SKM02
APT websitehttp:/ www.advancedpower.com
0.1 0.9 0.08 0.7 0.06 0.5 0.04 0.3 0.02 0.1 0.05 0 0.00001
Typical Performance Curve
1000
4 - 6
Breakdown Voltage vs Temperature 1.15
1.10
1.05
1.00
0.95
0.90 -50 -250 2550 75100 125 150 T , Junction Temperature (°C) J
Threshold Voltage vs Temperature 1.2
1.1 1.0
0.9 0.8
0.7 0.6 -50 -250 2550 75100 125 150 T ,Case Temperature (°C) C
Capacitance vs Drain to Source Voltage 100000
10000
Ciss
Coss
Crss
1000 0 1020 30 40 50 V ,Drain to Source Voltage (V) DS
APTM10SKM02
ON resistance vs Temperature 2.5 V =10V GS I =200A 2.0 D
1.5
1.0
0.5
0.0 -50 -250 2550 75100 125 150 T , Junction Temperature(°C) J
Maximum Safe Operating Area 10000
limited by 1000R DS on
100µs
1ms 100 10ms 10 Single pulse T =150°C J 1 1 10100 V ,Drain to Source Voltage (V) DS
Gate Charge vs Gate to Source Voltage 16 I =400A D V =20V 14DS T =25°C J 12 V =50V DS 10 V =80V DS 8 6 4 2 0 0 400800 12001600 2000 Gate Charge (nC)
APT websitehttp:/ www.advancedpower.com
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600
500
Delay Times vs Current
400V =66V DS R =1.25G 300T =125°C J L=100µH 200
100
t d(off )
t d(on)
0 50 150250 350 450 550 650 I ,Drain Current (A) D
Switching Energy vs Current 5 V =66V DS E off RG=1.254 T =125°C J L=100µH E on 3
2
1
0 50 150250 350 450 550 650 I ,Drain Current (A) D
APTM10SKM02
Rise and Fall times vs Current 300
250
200
tr
t 150 f V =66V DS 100 R =1.25G T =125°C J 50 L=100µH 0 50 150250 350 450 550 650 I ,Drain Current (A) D
Switching Energy vs Gate Resistance 9 V =66V DS 8 I =400A D E off T =125°C 7J L=100µH 6 5 4 E on 3 2 1 0 2.5 5 7.510 12.5 15 Gate Resistance (Ohms)
 OperatingFrequency vs Drain Curren Source to Drain Diode Forward Voltage 60 1000 TJ=150°C 50 ZCS ZVS 40 100 T =25°C J 30 Hard V =66V DS switching D=50% 20 10 R =1.25G T =125°C J 10 T =75°C C 0 1 100 200 300 400 5000.3 0.5 0.7 0.9 1.1 1.3 1.5 I ,Drain Current (A)V ,Source to Drain Voltage (V) D SD APT reserves the right to change, without notice, the specifications and information contained herein APT's products arecovered by one or more of U.S patents 4,895,8105,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058and foreign patents.U.S and Foreign patents pending.All Rights Reserved. APT websitehttp:/ www.advancedpower.com6 - 6
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