APT website http: www advancedpower com

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Niveau: Supérieur, Doctorat, Bac+8
APTM10AM02F A PT M 10 A M 02 F– R ev 1 O ct ob er , 2 00 4 APT website – 1 - 6 OUTVBUS E1 G1 0/VBUS G2 E2 Absolute maximum ratings These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 100 V Tc = 25°C 495 ID Continuous Drain Current Tc = 80°C 370 IDM Pulsed Drain current 1900 A VGS Gate - Source Voltage ±30 V RDSon Drain - Source ON Resistance 2.25 m? PD Maximum Power Dissipation Tc = 25°C 1250 W IAR Avalanche current (repetitive and non repetitive) 100 A EAR Repetitive Avalanche Energy 50 EAS Single Pulse Avalanche Energy 3000 mJ VDSS = 100V RDSon = 2.25m? max @ Tj = 25°C ID = 495A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS V® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance Phase leg MOSFET Power Module

  • source voltage

  • gate charge

  • vgs

  • drain current

  • junction temperature

  • low voltage

  • package characteristics

  • avalanche current


Publié le : mardi 19 juin 2012
Lecture(s) : 105
Source : thierry-lequeu.fr
Nombre de pages : 6
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hase leg MOSFET Power Module
APTM10AM02F
VDSS= 100V RDSon= 2.25mmax @ Tj = 25°C ID= 495A @ Tc = 25°C
Applicatio Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features ® Power MOS VFREDFETs -Low RDSon-Low input and Miller capacitance -Low gate charge -Avalanche energy rated -Very rugged Kelvin source for easy drive Very low stray inductance -Symmetrical design -M5 power connectors G1 V BUS0/VBUS OUTE 1 Benefits E 2Outstanding performance at high frequency operation G2Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Absolute maximumratingsymbol ParameterMa ratingsUnit VDSS100 V Drain- Source Breakdown Voltage Tc= 25°C495 IDDrain Current Continuous Tc370 A= 80°C IDM Pulsed1900Drain current VGS- Source Voltage Gate±30 V RDSon- Source ON Resistance2.25 m DrainPD MaximumTPower Dissipationc1250 W= 25°C IARcurrent (repetitive and non repetitive)100 A Avalanche EAR RepetitiveAvalanche Energy50 mJ EASPulse Avalanche Energy Single3000  TheseDevices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT websitehttp:/ www.advancedpower.com1 - 6
APTM10AM02F All ratings @ Tj= 25°C unless otherwise specifiedElectrical Characteristics Symbol CharacteristicTest ConditionsMin Typ MaxUnit BVDSS- Source Breakdown Voltage DrainVGS= 0V, ID= 1mA100 V V =0V, V GS DS= 100VTj400= 25°C IDSSµA ZeroGate Voltage Drain Current = 0V,V125°CT = VGSDS= 80Vj 2000 RDS(on) Drain– Source on ResistanceVGS= 10V, ID2.25 m= 200AVGS(th) GateThreshold VoltageVGS= VDS, IDV= 10mA2 4 IGSS Gate– Source Leakage CurrentVGS= ±30V, VDS= 0V±400 nA Dynamic Characteristics Symbol CharacteristicTest ConditionsMin Typ MaxUnit CissCapacitance V InputGS= 0V40 VDSnF= 25V CossCapacitance 15.7 Output f = 1MHz Crss Reverse5.9Transfer Capacitance Qg Totalgate Charge1360 VGS= 10V QgsV– Source Charge GateBus= 50V240 nC ID= 400A Qgd Gate720– Drain Charge Td(on) Turn-onDelay TimeInductive switching 160 VGS= 15V Tr240Rise Time VBus= 66Vns Td(off)500Turn-off Delay Time ID=400A T 160 fFall TimeRG= 1.25Inductive switching @ 25°C EonSwitching Energy Turn-onX 2.2 mJ VGS= 15V, VBus= 66V Eoff Turn-offSwitching EnergyY 2.41 ID= 400A,RG=1.25Inductive switching @ 125°C EonSwitching Energy Turn-onX 2.43 VGS= 15V, VBusmJ= 66V Eoff Turn-offSwitching EnergyY 2.56 ID= 400A, RG= 1.25Source - Drain diode ratings and characteristics Symbol CharacteristicTest ConditionsMin Typ MaxUnit ISTc = 25°C495Source current Continuous A (Body diode)Tc = 80°C370 VSDVForward Voltage DiodeGS= 0V, IS= - 400A1.3 V dv/dt PeakDiode RecoveryZ 5V/ns IS= - 400A Tj= 25°C190 trrVRecovery Time ReverseR= 50Vns Tj= 125°C370 diS/dt = 400A/µs IS= - 400A Tj= 25°C1.6 QrrRecovery Charge ReverseVRµC= 50V Tj= 125°C6.8 diS/dt = 400A/µs XEonincludes diode reverse recovery.YIn accordance with JEDEC standard JESD24-1. Zdv/dt numbers reflect the limitations of the circuit rather than the device itself. ISdi/dt- 495A400A/µs VR50V Tj150°C
APT websitehttp:/ www.advancedpower.com
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APTM10AM02F Thermal and package characteristics Symbol CharacteristicMin TypMax Unit RthJCto Case0.1 °C/W Junction VISOLRMS Isolation Voltage, any terminal to case t =1 min, I Isol<1mA, 50/60Hz2500 V TJ-40 150 Operatingjunction temperature range TSTG Storage-40 125Temperature Range°C TC Operating-40 100Case Temperature To heatsinkM6 35 Torque Mountingtorque N.m For terminalsM5 23.5 Wt PackageWeight 280g Package outline
APT websitehttp:/ www.advancedpower.com
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APT websitehttp:/ www.advancedpower.com
VGS=20V
Low Voltage Output Characteristics 1600 1400 V =15V,10V & 9V GS 12008V 1000 8007V 600 6V 400 200 0 0 4 812 16 20 24 28 V ,Drain to Source Voltage (V) DS
160 T =25°C J 80 T =125°C JT =-55°C J 0 0 1 2 3 4 5 6 7 V ,Gate to Source Voltage (V) GS
Single Pulse
0.001 0.010.1 rectangular Pulse Duration (Seconds)
0.0001
R vsDrain Current DS(on) 1.2 Normalized to V =10V@ 400A GS 1.1 V =10V GS 1
0.9
0.8 0 160320 480 640 800 960 I ,Drain Current (A) D
APTM10AM02F Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.12
Transfert Characteristics 480 V >I (on)xR(on)MAX DS DDS 400250µs pulse test @ < 0.5 duty cycle 320
 DCDrain Current vs Case Temperature 500 450 400 350 300 250 200 150 100 50 0 25 50 75100 125 150 T ,Case Temperature (°C) C
1
0.1 0.9 0.08 0.7 0.06 0.5 0.04 0.3 0.02 0.1 0.05 0 0.00001
4 - 6
240
10
Breakdown Voltage vs Temperature 1.15
1.10
1.05
1.00
0.95
0.90 -50 -250 2550 75100 125 150 T , Junction Temperature (°C) J
Threshold Voltage vs Temperature 1.2
1.1 1.0
0.9 0.8
0.7 0.6 -50 -250 2550 75100 125 150 T ,Case Temperature (°C) C
Capacitance vs Drain to Source Voltage 100000
10000
Ciss
Coss
Crss
1000 0 1020 30 40 50 V ,Drain to Source Voltage (V) DS
APTM10AM02F
ON resistance vs Temperature 2.5 V =10V GS I =200A 2.0 D
1.5
1.0
0.5
0.0 -50 -250 2550 75100 125 150 T , Junction Temperature(°C) J
Maximum Safe Operating Area 10000
limited by 1000R DS on
100µs
1ms 100 10ms 10 Single pulse T =150°C J 1 1 10100 V ,Drain to Source Voltage (V) DS
Gate Charge vs Gate to Source Voltage 16 I =400A D V =20V 14DS T =25°C J 12 V =50V DS 10 V =80V DS 8 6 4 2 0 0 400800 12001600 2000 Gate Charge (nC)
APT websitehttp:/ www.advancedpower.com
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600
500
Delay Times vs Current
0 40VDS=66V R =1.25G 300TJ=125°C L=100µH 200
100
t d(off )
t d(on)
0 50 150250 350 450 550 650 I ,Drain Current (A) D
Switching Energy vs Current 5 V =66V DS E off RG=1.254 T =125°C J L=100µH E on 3
2
1
0 50 150250 350 450 550 650 I ,Drain Current (A) D
APTM10AM02F
Rise and Fall times vs Current 300
250
200
tr
t f 150 V =66V DS 100 R =1.25G T =125°C J 50 L=100µH 0 50 150250 350 450 550 650 I ,Drain Current (A) D
Switching Energy vs Gate Resistance 9 V =66V DS 8 I =400A D E off T =125°C 7J L=100µH 6 5 4 E on 3 2 1 0 2.5 5 7.510 12.5 15 Gate Resistance (Ohms)
 OperatingFrequency vs Drain Curren Source to Drain Diode Forward Voltage 60 1000 TJ=150°C 50 ZCS ZVS 40 100 T =25°C J 30 V =66V DS Hard D=50% 20 10 switching R =1.25G T =125°C 10 J T =75°C C 0 1 100 200 300 400 5000.3 0.5 0.7 0.9 1.1 1.3 1.5 I ,Drain Current (A)V ,Source to Drain Voltage (V) D SD APT reserves the right to change, without notice, the specifications and information contained herein APT's products arecovered by one or more of U.S patents 4,895,8105,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058and foreign patents.U.S and Foreign patents pending.All Rights Reserved. APT websitehttp:/ www.advancedpower.com6 - 6
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