APT website http: www advancedpower com

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Niveau: Supérieur, Doctorat, Bac+8
APTM10AM02F A PT M 10 A M 02 F– Re v 0 M ar ch , 20 04 APT website – 1 - 3 OUTVBUS E1 G1 0/VBUS G2 E2 Absolute maximum ratings These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 100 V Tc = 25°C 495 ID Continuous Drain Current Tc = 80°C 370 IDM Pulsed Drain current 1900 A VGS Gate - Source Voltage ±30 V RDSon Drain - Source ON Resistance 2.25 m? PD Maximum Power Dissipation Tc = 25°C 1250 W IAR Avalanche current (repetitive and non repetitive) 100 A EAR Repetitive Avalanche Energy 50 EAS Single Pulse Avalanche Energy 3000 mJ VDSS = 100V RDSon = 2.25m? max @ Tj = 25°C ID = 495A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS V® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance Phase leg MOSFET Power Module

  • gate charge

  • tj operating junction

  • vgs

  • bvdss drain - source

  • drain current

  • fredfets - low rdson - low

  • vgs gate - source

  • avalanche current

  • voltage vgs


Publié le : mardi 19 juin 2012
Lecture(s) : 52
Source : thierry-lequeu.fr
Nombre de pages : 3
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Phase leg MOSFET Power Module
APTM10AM02F
VDSS= 100V RDSon= 2.25mΩmax @ Tj = 25C ID= 495A @ Tc = 25C
Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features FREDFETsPower MOS V -Low RDSon-Low input and Miller capacitance -Low gate charge -Avalanche energy rated  -Very rugged Kelvin source for easy drive Very low stray inductance -Symmetrical design -M5 power connectors G1 VBUS 0/VBUSOUTE1 Benefits E2Outstanding performance at high frequency operation G2Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Absolute maximum ratingsSymbol ParameterMax ratingsUnit VDSS Drain- Source Breakdown Voltage100 V Tc= 25C495 IDDrain Current Continuous Tc= 80C370 A IDM PulsedDrain current1900 VGS±30 V- Source Voltage Gate RDSon2.25 m Drain- Source ON ResistanceΩPDTPower Dissipation Maximumc1250 W= 25C IAR100 A Avalanchecurrent (repetitive and non repetitive) EARAvalanche Energy50 Repetitive mJ EAS3000Pulse Avalanche Energy Single  TheseDevices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com1 - 3
APTM10AM02F All ratings @ Tj= 25C unless otherwise specifiedElectrical Characteristics Symbol CharacteristicTest ConditionsMin Typ MaxUnit BVDSS DrainV- Source Breakdown VoltageGS= 0V, ID= 1mA100 V VGS= 0V,VDS= 100VTj400= 25C IDSS ZeroGate Voltage Drain CurrentA 0V Tj= 125C VGS= 0V,VDS= 82000 RDS(on)V– Source on Resistance DrainGS= 10V, ID= 370A2.25 mΩVGS(th)VThreshold Voltage GateGS= VDS, IDV= 10mA2 4 IGSS GateV– Source Leakage CurrentGS= ±30V, VDS= 0V±400 nA Dynamic Characteristics Symbol CharacteristicTest ConditionsMin Typ MaxUnit CissCapacitance V InputGS= 0V40 CossCapacitance V OutputDS= 25V15 nF f = 1MHz Crss ReverseTransfer Capacitance5.5 Qg Totalgate Charge1360 VGS= 10V QgsV– Source Charge GateBus436 nC= 50V ID= 400A Qgd524 Gate– Drain Charge Td(on)Delay Time Turn-onResistive Switching 160 VGS= 15V Tr240Rise Time VBusns= 50V Td(off)Turn-off Delay Time500 ID=400A TfRFall TimeG= 0.15Ω 160 Source - Drain diode ratings and characteristics Symbol CharacteristicTest ConditionsMin Typ MaxUnit IS495Tc = 25CSource current Continuous A (Body diode)Tc = 80C370 VSDForward VoltageV DiodeGS= 0V, IS1.3 V= - 400A dv/dt PeakDiode Recovery 5V/ns IS= - 400A Tj190= 25C trrRecovery TimeV ReverseRns= 50V Tj= 125C370 diS/dt = 400A/s IS= - 400A Tj= 25C1.6 QrrRecovery ChargeV ReverseRC= 50V Tj6.8= 125C diS/dt = 400A/s Eonincludes diode reverse recovery.In accordance with JEDEC standard JESD24-1. dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS- 495Adi/dtV400A/ sR50V Tj150C
APT website – http://www.advancedpower.com
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Thermal and package characteristics Symbol Characteristic RthJC Junctionto Case RMS Isolation Voltage, any terminal to case t =1 min, VISOLI Isol<1mA, 50/60Hz TJjunction temperature range Operating TSTGTemperature Range Storage TCCase Temperature Operating To heatsink Torque Mountingtorque For terminals Wt PackageWeight Package outline
APTM10AM02F
 MinTyp Max Unit  0.1C/W 2500 V -40 150 -40 125C -40 100 M6 35 N.m M5 23.5  280g
APT reserves the right to change, without notice, the specifications and information contained herein APTs products are covered by one or more of U.S patents 4,895,8105,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058and foreign patents.U.S and Foreign patents pending.All Rights Reserved. APT website – http://www.advancedpower.com3 - 3
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