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APTM20AM04F A PT M 20 A M 04 F– R ev 1 M ay , 2 00 4 APT website – 1 – 6 OUTVBUS S1 G1 0/VBUS G2 S2 Absolute maximum ratings These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 200 V Tc = 25°C 372 ID Continuous Drain Current Tc = 80°C 278 IDM Pulsed Drain current 1488 A VGS Gate - Source Voltage ±30 V RDSon Drain - Source ON Resistance 4 m PD Maximum Power Dissipation Tc = 25°C 1250 W IAR Avalanche current (repetitive and non repetitive) 100 A EAR Repetitive Avalanche Energy 50 EAS Single Pulse Avalanche Energy 3000 mJ VDSS = 200V RDSon = 4m max @ Tj = 25°C ID = 372A @ Tc = 25°C Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile Phase leg MOSFET Power Module

  • source voltage

  • gate charge

  • vgs

  • power supplies

  • drain current

  • junction temperature

  • low voltage

  • package characteristics


Publié le : mardi 19 juin 2012
Lecture(s) : 344
Source : thierry-lequeu.fr
Nombre de pages : 6
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APTM20AM04F
APTM20AM04F–Rev1
May,2004
APT website – http://www.advancedpower.com
1 – 6
OUT
VBUS
S1
G1
0/VBUS
G2
S2
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Symbol
Parameter
Max ratings
Unit
V
DSS
Drain - Source Breakdown Voltage
200
V
T
c
= 25°C
372
I
D
Continuous Drain Current
T
c
= 80°C
278
I
DM
Pulsed Drain current
1488
A
V
GS
Gate - Source Voltage
±30
V
R
DSon
Drain - Source ON Resistance
4
m
P
D
Maximum Power Dissipation
T
c
= 25°C
1250
W
I
AR
Avalanche current (repetitive and non repetitive)
100
A
E
AR
Repetitive Avalanche Energy
50
E
AS
Single Pulse Avalanche Energy
3000
mJ
V
DSS
= 200V
R
DSon
= 4m
max @ Tj = 25°C
I
D
= 372A @ Tc = 25°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Power MOS 7
®
FREDFETs
-
Low R
DSon
-
Low input and Miller capacitance
-
Low gate charge
-
Fast intrinsic reverse diode
-
Avalanche energy rated
-
Very rugged
Kelvin source for easy drive
Very low stray inductance
-
Symmetrical design
-
M5 power connectors
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
Phase leg
MOSFET Power Module
APTM20AM04F
APTM20AM04F–Rev1
May,2004
APT website – http://www.advancedpower.com
2 – 6
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
BV
DSS
Drain - Source Breakdown Voltage
V
GS
= 0V, I
D
= 500μA
200
V
V
GS
= 0V,V
DS
= 200V
T
j
= 25°C
500
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0V,V
DS
= 160V
T
j
= 125°C
2000
μA
R
DS(on)
Drain – Source on Resistance
V
GS
= 10V, I
D
= 186A
4
m
V
GS(th)
Gate Threshold Voltage
V
GS
= V
DS
, I
D
= 10mA
3
5
V
I
GSS
Gate – Source Leakage Current
V
GS
= ±30 V, V
DS
= 0V
±200
nA
Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
C
iss
Input Capacitance
28.8
C
oss
Output Capacitance
9.32
C
rss
Reverse Transfer Capacitance
V
GS
= 0V
V
DS
= 25V
f = 1MHz
0.58
nF
Q
g
Total gate Charge
560
Q
gs
Gate – Source Charge
212
Q
gd
Gate – Drain Charge
V
GS
= 10V
V
Bus
= 100V
I
D
= 372A
268
nC
T
d(on)
Turn-on Delay Time
32
T
r
Rise Time
64
T
d(off)
Turn-off Delay Time
88
T
f
Fall Time
Inductive switching @ 125°C
V
GS
= 15V
V
Bus
= 133V
I
D
= 372A
R
G
= 1.2
116
ns
E
on
Turn-on Switching Energy
3396
E
off
Turn-off Switching Energy
Inductive switching @ 25°C
V
GS
= 15V, V
Bus
= 133V
I
D
= 372A, R
G
= 1.2Ω
3716
μJ
E
on
Turn-on Switching Energy
3744
E
off
Turn-off Switching Energy
Inductive switching @ 125°C
V
GS
= 15V, V
Bus
= 133V
I
D
= 372A, R
G
= 1.2Ω
3944
μJ
Source - Drain diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Tc = 25°C
372
I
S
Continuous Source current
(Body diode)
Tc = 80°C
278
A
V
SD
Diode Forward Voltage
V
GS
= 0V, I
S
= - 372A
1.3
V
dv/dt
Peak Diode Recovery
5
V/ns
T
j
= 25°C
230
t
rr
Reverse Recovery Time
I
S
= -372A
V
R
= 133V
di
S
/dt = 400A/μs
T
j
= 125°C
450
ns
T
j
= 25°C
3.6
Q
rr
Reverse Recovery Charge
I
S
= -372A
V
R
= 133V
di
S
/dt = 400A/μs
T
j
= 125°C
13.6
μC
E
on
includes diode reverse recovery.
In accordance with JEDEC standard JESD24-1.
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
I
S
- 372A
di/dt
700A/μs
V
R
V
DSS
T
j
150°C
APTM20AM04F
APTM20AM04F–Rev1
May,2004
APT website – http://www.advancedpower.com
3 – 6
Thermal and package characteristics
Symbol
Characteristic
Min
Typ
Max
Unit
R
thJC
Junction to Case
0.1
°C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, Isol<1mA, 50/60Hz
2500
V
T
J
Operating junction temperature range
-40
150
T
STG
Storage Temperature Range
-40
125
T
C
Operating Case Temperature
-40
100
°C
To heatsink
M6
3
5
Torque
Mounting torque
For terminals
M5
2
3.5
N.m
Wt
Package Weight
280
g
Package outline
APTM20AM04F
APTM20AM04F–Rev1
May,2004
APT website – http://www.advancedpower.com
4 – 6
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
ThermalImpedance(°C/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
6.5V
7V
7.5V
8V
8.5V
10V
V
GS
=15V
9V
0
200
400
600
800
1000
1200
1400
0
4
8
12
16
20
24
28
V
DS
, Drain to Source Voltage (V)
I
D
,DrainCurrent(A)
Low Voltage Output Characteristics
Transfert Characteristics
T
J
=-55°C
T
J
=25°C
T
J
=125°C
0
200
400
600
800
1000
1200
0
1
2
3
4
5
6
7
8
9
1
0
V
GS
, Gate to Source Voltage (V)
I
D
,DrainCurrent(A)
V
DS
> I
D
(on)xR
DS
(on)MAX
250μs pulse test @ < 0.5 duty cycle
R
DS(on)
vs Drain Current
V
GS
=10V
V
GS
=20V
0.8
0.9
1
1.1
1.2
0
100
200
300
400
500
600
I
D
, Drain Current (A)
R
DS(on)
DraintoSourceONResistance
Normalized to
V
GS
=10V @ 186A
0
50
100
150
200
250
300
350
400
25
50
75
100
125
150
T
C
, Case Temperature (°C)
I
D
,DCDrainCurrent(A)
DC Drain Current vs Case Temperature
APTM20AM04F
APTM20AM04F–Rev1
May,2004
APT website – http://www.advancedpower.com
5 – 6
0.90
0.95
1.00
1.05
1.10
1.15
-50 -25
0
25
50
75 100 125 150
T
J
, Junction Temperature (°C)
BV
DSS
,DraintoSourceBreakdown
Volta
ge(Normalized)
Breakdown Voltage vs Temperature
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25
0
25
50
75 100 125 150
T
J
, Junction Temperature (°C)
RDS(on),DraintoSourceONresistance
(Normalized)
V
GS
=10V
I
D
= 186A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25
0
25
50
75 100 125 150
T
C
, Case Temperature (°C)
V
GS
(TH),ThresholdVoltage
(Normalized)
Maximum Safe Operating Area
100ms
10ms
1ms
100μs
1
10
100
1000
10000
1
10
100
1000
V
DS
, Drain to Source Voltage (V)
I
D
,DrainCurrent(A)
Single pulse
T
J
=150°C
limited by
R
DSon
Ciss
Crss
Coss
100
1000
10000
100000
0
1
0
2
0
3
0
4
0
5
0
V
DS
, Drain to Source Voltage (V)
C,Capacitance(pF)
Capacitance vs Drain to Source Voltage
V
DS
=40V
V
DS
=100V
V
DS
=160V
0
2
4
6
8
10
12
14
0
80 160 240 320 400 480 560 640
Gate Charge (nC)
V
GS
,GatetoSourceVoltage(V)
Gate Charge vs Gate to Source Voltage
I
D
=372A
T
J
=25°C
APTM20AM04F
APTM20AM04F–Rev1
May,2004
APT website – http://www.advancedpower.com
6 – 6
Delay Times vs Current
t
d(on)
t
d(off)
0
20
40
60
80
100
120
0
100
200
300
400
500
600
I
D
, Drain Current (A)
t
d(on)
andt
d(off)
(ns)
V
DS
=133V
R
G
=1.2Ω
T
J
=125°C
L=100μH
Rise and Fall times vs Current
t
r
t
f
0
20
40
60
80
100
120
140
160
0
100
200
300
400
500
600
I
D
, Drain Current (A)
t
r
andt
f
(ns)
V
DS
=133V
R
G
=1.2Ω
T
J
=125°C
L=100μH
Switching Energy vs Current
E
on
E
off
0
2
4
6
8
0
100
200
300
400
500
600
I
D
, Drain Current (A)
E
on
andE
off
(mJ)
V
DS
=133V
R
G
=1.2Ω
T
J
=125°C
L=100μH
E
on
E
off
2
4
6
8
10
12
0
2
.
5
5
7
.
5
1
0
1
2
.
5
Gate Resistance (Ohms)
SwitchingEnergy(mJ)
Switching Energy vs Gate Resistance
V
DS
=133V
I
D
=372A
T
J
=125°C
L=100μH
0
50
100
150
200
250
300
350
50
100
150
200
250
300
350
I
D
, Drain Current (A)
Frequency(kHz)
Operating Frequency vs Drain Current
V
DS
=133V
D=50%
R
G
=1.2Ω
T
J
=125°C
T
J
=25°C
T
J
=150°C
1
10
100
1000
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
V
SD
, Source to Drain Voltage (V)
I
DR
,ReverseDrainCurrent(A)
Source to Drain Diode Forward Voltage
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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