APT website http: www advancedpower com

Pdoumergue

Description

Niveau: Supérieur, Doctorat, Bac+8
APTM10SKM02 A PT M 10 SK M 02 – R ev 0 M ay , 2 00 5 APT website – 1 - 6 Q1 S1 OUT 0/VBUS CR2 VBUS G1 OUTG1 S1 0/VBUSVBUS Absolute maximum ratings These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 100 V Tc = 25°C 495 ID Continuous Drain Current Tc = 80°C 370 IDM Pulsed Drain current 1900 A VGS Gate - Source Voltage ±30 V RDSon Drain - Source ON Resistance 2.5 m? PD Maximum Power Dissipation Tc = 25°C 1250 W IAR Avalanche current (repetitive and non repetitive) 100 A EAR Repetitive Avalanche Energy 50 EAS Single Pulse Avalanche Energy 3000 mJ VDSS = 100V RDSon = 2.25m? typ @ Tj = 25°C ID = 495A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies Features • Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile Buck chopper MOSFET Power Module

• source voltage


• gate charge


• vgs


• drain current


• junction temperature


• low voltage


• maximum effective


• package characteristics


• avalanche current

Sujets

• Junction temperature
• Low voltage

Informations

• Publié par: profil-zyak-2012
• Nombre de lectures: 62

Extrait

APTM10SKM02

V DSS = 100V uck choppe R DSon = 2.25mΩtyp @ Tj = 25°C MOSFET Power Module I D = 495A @ Tc = 25°C Applicatio VB US Q1 •AC and DC motor control •Switched Mode Power Supplies G1 Features OUT ® S1 •Power MOS VMOSFETs -Low R DSon CR2 -Low input and Miller capacitance -Low gate charge -Avalanche energy rated -Very rugged 0/VBUS •Kelvin source for easy drive •Very low stray inductance -Symmetrical design -M5 power connectors •High level of integration G1 V BUS0/VBUS OUT S1 Benefits •Outstanding performance at high frequency operation •Direct mounting to heatsink (isolated package) •Low junction to case thermal resistance •Low profile Absolute maximumratings ymbol ParameterMa ratingsUnit V DSS - Source Breakdown Voltage Drain100 V T c 495= 25°C I D  ContinuousDrain Current T c 370 A = 80°C I DM Drain current1900 Pulsed V GS ±30 V Gate- Source Voltage R DSon - Source ON Resistance2.5 m Drain Ω P D TPower Dissipation Maximum c 1250 W= 25°C I AR  Avalanchecurrent (repetitive and non repetitive)100 A E AR Avalanche Energy Repetitive50 mJ E AS 3000 SinglePulse Avalanche Energy  TheseDevices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.

APT websitehttp:/ www.advancedpower.com

1 - 6