Mode d'emploi pour APT website http: www advancedpower com

Description

Niveau: Supérieur, Doctorat, Bac+8
APTM20AM04F A PT M 20 A M 04 F– R ev 1 M ay , 2 00 4 APT website – 1 – 6 OUTVBUS S1 G1 0/VBUS G2 S2 Absolute maximum ratings These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 200 V Tc = 25°C 372 ID Continuous Drain Current Tc = 80°C 278 IDM Pulsed Drain current 1488 A VGS Gate - Source Voltage ±30 V RDSon Drain - Source ON Resistance 4 m PD Maximum Power Dissipation Tc = 25°C 1250 W IAR Avalanche current (repetitive and non repetitive) 100 A EAR Repetitive Avalanche Energy 50 EAS Single Pulse Avalanche Energy 3000 mJ VDSS = 200V RDSon = 4m max @ Tj = 25°C ID = 372A @ Tc = 25°C Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile Phase leg MOSFET Power Module

• source voltage


• gate charge


• vgs


• power supplies


• drain current


• junction temperature


• low voltage


• package characteristics

Sujets

• Low voltage
• Junction temperature
• Power supply

Informations

• Publié par: profil-zyak-2012
• Nombre de lectures: 345

Extrait

APTM20AM04F

APTM20AM04F–Rev1

May,2004

APT website – http://www.advancedpower.com

1 – 6

OUT

VBUS

S1

G1

0/VBUS

G2

S2

Absolute maximum ratings

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.

Symbol

Parameter

Max ratings

Unit

V

DSS

Drain - Source Breakdown Voltage

200

V

T

c

= 25°C

372

I

D

Continuous Drain Current

T

c

= 80°C

278

I

DM

Pulsed Drain current

1488

A

V

GS

Gate - Source Voltage

±30

V

R

DSon

Drain - Source ON Resistance

4

m

P

D

Maximum Power Dissipation

T

c

= 25°C

1250

W

I

AR

Avalanche current (repetitive and non repetitive)

100

A

E

AR

Repetitive Avalanche Energy

50

E

AS

Single Pulse Avalanche Energy

3000

mJ

V

DSS

= 200V

R

DSon

= 4m

max @ Tj = 25°C

I

D

= 372A @ Tc = 25°C

Application

Welding converters

Switched Mode Power Supplies

Uninterruptible Power Supplies

Motor control

Features

Power MOS 7

®

FREDFETs

-

Low R

DSon

-

Low input and Miller capacitance

-

Low gate charge

-

Fast intrinsic reverse diode

-

Avalanche energy rated

-

Very rugged

Kelvin source for easy drive

Very low stray inductance

-

Symmetrical design

-

M5 power connectors

High level of integration

Benefits

Outstanding performance at high frequency operation

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Low profile

Phase leg

MOSFET Power Module