MAXIMUM RATINGS All Ratings: TC 25°C unless otherwise specified

Darelb

Description

Niveau: Supérieur, Doctorat, Bac+8
05 0- 70 08 R ev B 9 -2 00 4 MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. G D S CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - TO-247 D3PAK BLL SLL APT20M34BLL APT20M34SLL 200V 74A 0.034? • Lower Input Capacitance • Increased Power Dissipation • Lower Miller Capacitance • Easier To Drive • Lower Gate Charge, Qg • TO-247 or Surface Mount D3PAK Package Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7 ® combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. POWER MOS 7 R MOSFET Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 (VGS = 10V, ID = 37A) Zero Gate Voltage Drain Current (VDS = 200V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 160V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA) Symbol VDSS

• source voltage


• body diode


• drain current


• gate voltage


• diode forward


• switching energy


• lower miller


• current

Sujets

• Transfer
• Threshold voltage
• Current

Informations

• Publié par: profil-zyak-2012
• Nombre de lectures: 15
• Langue: English

Extrait

APT20M34BLL
APT20M34SLL
200V74A0.034
Ω
R POWER MOS 7 MOSFET
LLB®
D
3
PAK
Power MOS 7

is a new generation of low loss, high voltage, N-Channel
TO-247
enhancement mode power MOSFETS. Both conduction and switching
®losses are addressed w
®
ith Power MOS 7 by significantly lowering R
DS(ON)
and Q
g
. Power MOS 7

combines lower conduction and switching losses
SLL
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
D•Lower Input Capacitance•Increased Power Dissipation
•Lower Miller Capacitance•Easier To Drive
G
•Lower Gate Charge, Qg•TO-247 or Surface Mount D
3
PAK Package
S
MAXIMUM RATINGS
All Ratings: T
C
= 25°C unless otherwise specified.
SymbolParameterAPT20M34BLL_SLLUNIT
V
DSS
Drain-Source Voltage
200
Volts
I
D
Continuous Drain Current @ T
C
= 25°C
74
Amps
I
DM
Pulsed Drain Current
1
296
V
GS
Gate-Source Voltage Continuous
±30
Volts
V
GSM
Gate-Source Voltage Transient
±40
PTotal Power Dissipation @ T
C
= 25°C
403
Watts
DLinear Derating Factor
3.23
W/°C
T
J
,T
STG
Operating and Storage Junction Temperature Range
-55 to 150
C°T
L
Lead Temperature: 0.063" from Case for 10 Sec.
300
I
AR
Avalanche Current
1
(Repetitive and Non-Repetitive)
74
Amps
E
AR
Repetitive Avalanche Energy
1
30
JmE
AS
Single Pulse Avalanche Energy
4
1300
STATIC ELECTRICAL CHARACTERISTICS
SymbolCharacteristic / Test ConditionsMINTYPMAXUNIT
BV
DSS
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250µA)
200
Volts
R
DS(on)
Drain-Source On-State Resistance
2
(V
GS
= 10V, I
D
= 37A)
0.034
Ohms
Zero Gate Voltage Drain Current (V
DS
= 200V, V
GS
= 0V)
100
I
DSS
µA
Zero Gate Voltage Drain Current (V
DS
= 160V, V
GS
= 0V, T
C
= 125°C)
500
I
GSS
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
±100
nA
V
GS(th)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 1mA)
35
Volts
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com

DYNAMIC CHARACTERISTICSAPT20M34BLL_SLL
SymbolCharacteristicTest ConditionsMINTYPMAXUNIT
C
iss
Input Capacitance
V

= 0V
3660
SGC
oss
Output Capacitance
V
DS

= 25V
1170
pF
C
rss
Reverse Transfer Capacitance
f

= 1 MHz
60
Q
g
Total Gate Charge
3V
GS

= 10V
60
Q
gs
Gate-Source Charge
V
DD

= 100V
23
nC
I
D

= 74A

@ 25°C
Q
gd
Gate-Drain ("Miller") Charge
26
tTurn-on Delay Time
RESISTIVE SWITCHING
10
d(on)V
GS

=

15V
t
r
Rise Time
V
DD

=

100V
27ns
t
d(off)
Turn-off Delay Time
I
D

=

74A

@ 25°C
25
R

=

0.6
Ω
t
f
Fall Time
G
4
INDUCTIVE SWITCHING @ 25°C
E
on
Turn-on Switching Energy
6V

=

133V, V= 15V
505
SGDDE
off
Turn-off Switching Energy
I
D

=

74A, R
G

=

5
Ω
395
INDUCTIVE SWITCHING @ 125°C
µ
J
E
on
Turn-on Switching Energy
6V

=

133V V= 15V
640
SGDDE
off
Turn-off Switching Energy
I
D

=

74A, R
G

=

5
Ω
425
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
SymbolCharacteristic / Test ConditionsMINTYPMAXUNIT
I
S
Continuous Source Current (Body Diode)
74
spmAI
SM
Pulsed Source Current
1
(Body Diode)
296
V
SD
Diode Forward Voltage
2
(V
GS
= 0V, I
S
= -74A)
1.3
Volts
t
rr
Reverse Recovery Time (I
S
= -74A, dl
S
/dt = 100A/µs)
160
ns
Q
rr
Reverse Recovery Charge (I
S
= -74A, dl
S
/dt = 100A/µs)
1.3
µC
dv
/
dt
Peak Diode Recovery
dv
/
dt 5
5
V/ns
THERMAL CHARACTERISTICS
SymbolCharacteristicMINTYPMAXUNIT
R
θ
JC
Junction to Case
0.31
W/C°R
θ
JA
Junction to Ambient
40
1Repetitive Rating: Pulse width limited by maximum junction4Starting T
j

=

+25°C, L = 0.470mH, R
G

=

25
Ω
, Peak I
L
= 74A
temperature5
dv
/
dt
numbers reflect the limitations of the test circuit rather than the
2Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%device itself.
IS

≤
-
ID
74A
di
/
dt

≤
700A/µs

VR

≤

VDSS

TJ

≤
150
°
C
3See MIL-STD-750 Method 34716 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
53.00.300.9
52.07.002.00.150.5Note:
t10.100.3
t2
Duty Factor D = t1/t2
0.050.1
Peak TJ = PDM x Z
θ
JC + TC
0.05SINGLE PULSE
010
-5
10
-4
10
-3
10
-2
10
-1
1.0
FIGURE 1, MAXIMUM EFFECTIVE T
R
R
E
A
C
N
TA
SI
N
E
G
N
U
T
L
T
A
H
R
E
P
R
U
M
L
A
S
L
E
I
D
M
U
P
R
E
A
D
T
A
I
N
O
C
N (
E
S
, J
E
U
C
N
O
C
N
T
D
I
S
O
)
N-TO-CASE vs PULSE DURATION

Typical Performance Curves
APT20M34BLL_SLL
160VGS=10 &15V
1406.5V
021RC MODEL1006V
tJeumncpt.i (o
°
nC)
080.1310.00789F5.5V
Power60
(watts)5V
400.1800.161F4.5V
02Case temperature. (
°
C)4V
0051015202530
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, HIGH VOLTAGE OUTPUT CHARACTERISTICSFIGURE 3, LOW

VOLTAGE OUTPUT CHARACTERISTICS
1201.4
VDS2>5 0IDµ S(EOCN.) xP U RLSDES (TOENS)TMAX.VNOR= M1A0LVI Z E@D 3T7OA
SG100
@ <0.5 % DUTY CYCLE
1.3
082.1VGS=10V
061.140TJ = +25°C1.0
TJ = +125°C
20TJ = -55°C0.9
VGS=20V
8.00024681012020406080100120
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)I
D
, DRAIN CURRENT (AMPERES)
FIGURE 4, TRANSFER CHARACTERISTICSFIGURE 5, R
DS
(ON) vs DRAIN CURRENT
801.15
0701.106501.05
04301.00
200.95
0109.00255075100125150-50-250255075100125150
T
C
, CASE TEMPERATURE (°C)T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATUREFIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
2.51.2
I
D
= 37A
V
GS
= 10V
1.1
0.20.15.19.00.18.00.50.7
0.00.6
-50-2T5, JU0NCTI2O5N TE50MPE7R5ATU10R0E (°1C2)5150-50-25T, 0CAS2E5 TEM5P0ERA7T5UR1E0 (0°C)125150
CJFIGURE 8, ON-RESISTANCE vs. TEMPERATUREFIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

792LIOMIPTEERDA TBIYO RN DHSE (ROEN)
00101TC =+25°C
STIJN =G+L1E5 0P°UCLSE
1110100200
V, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIG
D
U
S
RE 10, MAXIMUM SAFE OPERATING AREA
16
I
D
= 74A
12VDS=40V
VDS=100V
8VDS=160V
4

Sµ001Sm1Sm01

00102030405060708090100
Q
g
, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
05t
d(off)
04V
DD
= 133V
30
R
G
= 5
Ω
T
J
= 125°C
L = 100µH
02t
d(on)
0101030507090110130
)A( IFIGURE 14, DELAY
D
TIMES vs CURRENT
0021V
DD
= 133V
R
G
= 5
Ω
1000
T
J
= 125°C
L = 100µH
E
ON
includes
E
on
800
diode reverse recovery.
006400E
off
00201030507090110130
I
D
(A)
FIGURE 16, SWITCHING ENERGY vs CURRENT

20,000
APT20M34BLL_SLL
10,000
Cssi1,000Coss
001Cssr1001020304050
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11,

CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
002001TJ =+150°C
TJ =+2