n SPECIFIC TO FREEWHEEL MODE OPERATIONS FREEWHEEL OR BOOSTER DIODE
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Description

Niveau: Supérieur, Doctorat, Bac+8
1/8 n SPECIFIC TO FREEWHEEL MODE OPERATIONS : FREEWHEEL OR BOOSTER DIODE n ULTRA-FAST AND SOFT RECOVERY n VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR n HIGH FREQUENCY OPERATIONS FEATURES AND BENEFITS The TURBOSWITCH is a very high performance series of ultra-fast high voltage power diodes. TURBOSWITCH family drastically cuts losses in both the diode and the associated switching IGBT and MOSFET in all freewheel mode operations and is particulary suitable and efficient in motor control freewheel applications and in booster diode applications in power factor control circuitries. Available either in SMB or DO-15 axial package, these 600V devices are particularly intended for use on 240V domestic mains. DESCRIPTION IF(AV) 1A VRRM 600V trr (typ) 20ns VF (max) 1.5V MAIN PRODUCT CHARACTERISTICS Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 600 V IF(RMS) RMS forward current 6 A IFRM Repetitive peak forward current tp = 5 µs F = 5kHz square 10 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 25 A Tj Maximum operating junction temperature 125 °C Tstg Storage temperature range - 65 to + 150 °C TM : TURBOSWITCH is a trademark of STMicroelectronics ABSOLUTE RATINGS (limiting values) STTA106/U® TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE SMB STTA106U DO-15 STTA106 February 2001 - Ed: 5D

  • conduction losses versus average current

  • conduction losses

  • peak

  • current tp

  • forward voltage

  • turboswitch family

  • recovery time

  • junction capacitance


Sujets

Informations

Publié par
Nombre de lectures 46

Extrait

®

STTA106/U

TURBOSWITCHULTRA-FAST HIGH VOLTAGE DIODE

MAINPRODUCTCHARACTERISTICS
I
F(AV)
1A
V
RRM
600V
t
rr
(typ)20ns
V
F
(max)1.5V

BMSSTTA106U

STDTOA-11506

FEATURESANDBENEFITS
n
SOPPEECRIAFITICOTNOS:FFRREEEEWWHHEEEELLMOORDBEOOSTER
EDOIDn
ULTRA-FASTANDSOFTRECOVERY
n
VBEORTYHLTOHEWDOIVOEDREALALNDPOTWHEERCLOOMSPSAENSIOINN
TRANSISTOR
n
HIGHFREQUENCYOPERATIONS
DESCRIPTION
TheTURBOSWITCHisaveryhighperformancecontrolfreewheelapplicationsandinbooster
sTeUriReBsOofSuWltIrTa-CfaHstfahimgihlyvodlrtaasgtiecaplolywecrutdsioldoesss.esincdiirocdueitrieas.pplicationsinpowerfactorcontrol
abnotdhtMhOeSdiFoEdTeianndaltlhfereaesswohceiealtemdosdweitcohpinegraItiGoBnTstAhveasileab6l0e0eVithdeerviicnesSMarBeoprarDtiOc-u1la5rlayxiinatlepnadcekdagfoer,
andisparticularysuitableandefficientinmotoruseon240Vdomesticmains.
ABSOLUTERATINGS
(limitingvalues)
SymbolParameterValueUnit
V
RRM
Repetitivepeakreversevoltage600V
I
F(RMS)
RMSforwardcurrent6A
I
FRM
RepetitivepeakforwardcurrenttFp==55k
m
Hszsquare10A
I
FSM
Surgenonrepetitiveforwardcurrenttp=10mssinusoidal25A
T
j
Maximumoperatingjunctiontemperature125°C
T
stg
Storagetemperaturerange-65to+150°C
TM:TURBOSWITCHisatrademarkofSTMicroelectronics

February2001-Ed:5D

8/1

STTA106/U
THERMALANDPOWERDATA
SymbolParameterTestconditions
R
th(j-I)
JunctiontoleadSMB
JunctiontoleadL=5mmDO-15
P
1
ConductionpowerI
F(AV)
=0.8A
d
=0.5SMB
dissipationTlead=93°C
I
F(AV)
=0.8A
d
=0.5DO-15
Tlead=60°C
P
max
TotalpowerdissipationTlead=90°CSMB
(PPm3a=x1=0P%1P+1)P3Tlead=60°CDO-15

STATICELECTRICALCHARACTERISTICS
SymbolParameterTestconditionsMin
V
F*
ForwardvoltagedropI
F
=1ATj=25°C
Tj=125°C
I
R**
ReverseleakagecurrentV
R
=0.8xTj=25°C
V
RRM
Tj=125°C
V
to
ThresholdvoltageIp<3.I
F(AV)
Tj=125°C
RdDynamicresistance
Testpulse:*tp=380
m
s,
d
<2%
**tp=5ms,
d
<2%
Toevaluatethemaximumconductionlossesusethefollowingequation:
P=V
to
xI
F(AV)
+RdxI
F2(RMS)

DYNAMICELECTRICALCHARACTERISTICS
TURN-OFFSWITCHING
SymbolParameterTestconditionsMin
t
rr
ReverseTj=25°C
recoverytimeI
F
=0.5AI
R
=1AIrr=0.25A
I
F
=1AdI
F
/dt=-50A/
m
sV
R
=
V03I
RM
MaximumTj=125°CVR=400VI
F
=1A
recoverycurrentdI
F
/dt=-8A/
m
s
dI
F
/dt=-50A/
m
s
SfactorSoftnessfactorTj=125°CV
R
=400VI
F
=1A
dI
F
/dt=-50A/
m
s
TURN-ONSWITCHING
SymbolParameterTestconditionsMin
t
fr
ForwardTj=25°C
recoverytimeI
F
=1A,dI
F
/dt=8A/
m
s
V
Fp
Peakforwardmeasuredat1.1
´
V
F
max
voltage

8/2

eulaV32544.14.15.15.1

TypMax
57.11.11.5
01250750
51.1053

TypMax
02056.06.11.1

TypMax
00501

tinUC°W/W/C°WWWW

tinUVAmVWm

tinUsnA/

tinUsnV

Fig.1
:Conductionlossesversusaveragecurrent.
)W(1P8.11.6
d
= 0.05
d
= 0.1
d
= 0.2
d
= 0.5
4.11.2
d
= 1
0.18.06.04.00.2
IF(av) (A)
0.00.00.10.20.30.40.50.60.70.80.91.01.1

Fig.3:
PeakreverserecoverycurrentversusdI
F
/dt
(90%confidence).

IRM(A)
87
TVjR=1=2450°0CV
6
IF=2*IF(av)
543
IF=IF(av)
21
dIF/dt(A/µs)
0050100150200

Fig.5:
Softnessfactor(tb/ta)versusdI
F
/dt(typical
values).
S factor
6.1IFV=R2=*4IF0(0aVv)
1.4
Tj=125°C
2.10.18.0dIF/dt(A/µs)
0.60102030405060708090100

STTA106/U

Fig.2:
Forwardvoltagedropversusforwardcur-
rent(maximumvalues).
IFM(A)
1+E11E+0
Tj=125°C
Tj=25°C
1-E1VFM(V)
1E-20.00.51.01.52.02.53.0

Fig.4:
ReverserecoverytimeversusdI
F
/dt(90%
confidence).

trr(ns)
522200
TVjR=1=2450°0CV
571051125
IF=2*IF(av)
100
IF=IF(av)
5705250
dIF/dt(A/µs)
020406080100120140160180200

v
F
e
i
r
g
s
.
us
6:
juRncetliaotinvteemvapreirataitounreo(fredfeyrneanmciecTjpa=ra12m5e°teCr)s.
(Reference:Tj=125°C)
1.10.19.08.07.052

S factor
MRITj(°C)
5075100125

8/3

STTA106/U

d
F
I
i
F
g
/
.
dt
7
(
:
90T%racnosinefindtenpceea)k.forwardvoltageversus
VFP(V)
0435
TjI=F1=225A°C
03520251015
dIF/dt(A/µs)
0020406080100120140160180200

Fig.9:
Junctioncapacitanceversusreversevolt-
ageapplied(typicalvalues).
)Fp(C01

5

211

8/4

)V(RV01

F=1MHz

100200

Fig.8:
ForwardrecoverytimeversusdI
F
/dt(90%
confidence).

A2=FIVFR=1.1*VF max.
Tj=125°C

tfr(ns)
550500
445000
053320500
002115000
50
dIF/dt(A/µs)
0020406080100120140160180200

STTA106/U
APPLICATIONDATA
TheTURBOSWITCH
TM
isespeciallydesignedtoThewayofcalculatingthepowerlossesisgiven
providethelowestoverallpowerlossesinanybelow:
FreewhellModeapplication(seefig.A)
consideringbothdiodeandcompaniontransistor,
thusoptimizingtheoverallperformanceintheend
application.

TOTALLOSSES
duetothediode
P=P1+P2+P3+P4+P5Watts

CONDUCTIONREVERSESWITCHING
LOSSESLOSSESLOSSES
inthediodeinthediodeinthediode

Fig.A:
FREEWHEELMODE
SWITCHING
TRANSISTOR

VR

ptTF=1/T
d
= tp/T

DIODE:
TURBOSWITCH

SLWIOTSCSHEISNG
idnutehteottrhaensdiisotdoer

LI

DAOL

8/5

STTA106/U
APPLICATIONDATA(Contd)
Fig.B:
STATICCHARACTERISTICS
IIFdRVRVIRVtoVF

Fig.C:
TURN-OFFCHARACTERISTICS
VLITRANSISTOR
It

8/6

IdIF/dtDIODE
atbtVtIRMdIR/dt
RVtrr=ta+tbS=tb/ta
IdI
F
/dt=V
R
/LORPEECRTAIFTIIEORN
Vtatbt
I
RM
dIR/dt
VRtrrS==ttab/+tatb

Conduction
losses:
P1=V
to
xI
F(AV)
+R
d
xI
F2(RMS)

Reverse
losses:
P2=V
R
xI
Rx(1-
d
)

(
T
in
ur
th
n-
e
o
t
n
ralnossissetosr:,duetothediode)
P5=V
R
´
I
RM
2
´
(3
#
2
´
S)
´
F
6xdI
F
dt
+V
R
´
I
RM
´
I
L
´
(S
#
2)
´
F
2
´
dI
F
dt

Turn-off
losses(inthediode):
P3=V
R
´
I
RM
2
´
S
´
F
6xdI
F
dt
IPG3BaTndP5aresuitableforpowerMOSFETand

APPLICATIONDATA(Contd)
Fig.D:
TURN-ONCHARACTERISTICS
IFdIF/dtIFmax
t0VFVpF1.1VFVF
t0rft

PACKAGE MECHANICAL DATA
BMS

C

1E

D

E1AA2L

FOOTPRINTDIMENSIONS
(inmillimeters)

1.522.751.52

3.2

b

Turn-on
losses:
P4=0.4(V
FP
-V
F
)xI
Fmax
xt
fr
xF

STTA106/U

DIMENSIONS
REF.MillimetersInches
Min.Max.Min.Max.
A11.902.450.0750.096
A20.050.200.0020.008
b1.952.200.0770.087
c0.150.410.0060.016
E5.105.600.2010.220
E14.054.600.1590.181
D3.303.950.1300.156
L0.751.600.0300.063

8/7

STTA106/U
PACKAGE MECHANICAL DATA
51-ODC

D

DIMENSIONS
REF.MillimetersInches
Min.Max.Min.Max.
A6.056.750.2380.266
B2.953.530.1160.139
C26311.0241.220
D0.710.880.0280.035

MARKING
TypeMarkingPackage
STTA106UT01SMB
STTA106STTA106DO-15
STTA106RLSTTA106DO-15
nn
EBpaonxdyinmdieceattsesUcLa9t4h,oVd0e

A

B

Weight
g1.0g4.0g4.0

C

BaseQty
21500000
0006

Deliverymode
tape&reel
Ammopack
tape&reel

Informationfurnishedisbelievedtobeaccurateandreliable.However,STMicroelectronicsassumesnoresponsibilityfortheconsequencesof
useofsuchinformationnorforanyinfringementofpatentsorotherrightsofthirdpartieswhichmayresultfromitsuse.Nolicenseisgrantedby
implicationorotherwiseunderanypatentorpatentrightsofSTMicroelectronics.Specificationsmentionedinthispublicationaresubjectto
changewithoutnotice.Thispublicationsupersedesandreplacesallinformationpreviouslysupplied.
STMicroelectronicsproductsarenotauthorizedforuseascriticalcomponentsinlifesupportdevicesorsystemswithoutexpresswrittenap-
provalofSTMicroelectronics.
TheSTlogoisaregisteredtrademarkofSTMicroelectronics
©2001STMicroelectronics-PrintedinItaly-Allrightsreserved.
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