Nitride nanostructures for spintronic applications [Elektronische Ressource] / Ralf Schuber. Betreuer: H. Kalt

Ralf Schuber

Description

Nitride nanostructures for spintronic applicationsZur Erlangung des akademischen Grades einesDOKTORS DER NATURWISSENSCHAFTENvon der Fakult at fur Physik des Karlsruher Instituts fur TechnologiegenehmigteDISSERTATIONvonDipl. Phys. Ralf Schuberaus L orrachTag der mundlic hen Prufung: 1. Juli, 2011Referent: Prof. Dr. H. KaltKorreferent: Prof. Dr. Th. SchimmelParts of this work have already been published or accepted for publishing:R. Schuber, M. M. C. Chou, P. Vincze, Th. Schimmel, D. M. Schaadt, "Growth ofA-plane GaN growth on (010) LiGaO by plasma-assisted molecular beam epitaxy",2Journal of Crystal Growth 312 (2010) 1665-1669.R. Schuber, M. M. C. Chou, D. M. Schaadt, "Growth of M -plane GaN on (100)LiGaO by plasma-assisted molecular beam epitaxy", Thin Solid Films 518 (2010)26773-6776.R. Schuber, Y. L. Chen, C. H. Shih, T. H. Huang, P. Vincze, I. Lo, L. W. Chang, Th.Schimmel, M. M. C. Chou, D. M. Schaadt, "Growth of non-polar GaN on LiGaO2by plasma-assisted MBE", Journal of Crystal Growth 323 (2010) 76-79.R. Schuber, M. M. C. Chou, P. Vincze, Th. Schimmel, D. M. Schaadt, "Growthof M - and A-plane GaN on LiGaO by plasma-assisted MBE", accepted in AIP2Conference Proceedings (2010).C. H. Shih, T. H. Huang, R. Schuber, Y. L. Chen, L. W. Chang, I. Lo, M. M. C.Chou, D. M. Schaadt, "Microstructure of M - and A-plane GaN on LiGaO grown2by plasma-assisted MBE", Nanoscale Research Letters 6 (2011) 425.R. Schuber, P. R. Ganz, F. Wilhelm, A. Rogalev, D.

Sujets

• Physik

Informations

• Publié par: karlsruher_institut_fur_technologie
• Publié le: 01 janvier 2011
• Nombre de lectures: 62
• Poids de l'ouvrage: 27 Mo

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