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Publié par | profil-zyan-2012 |
Nombre de lectures | 16 |
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by D44H/DSEMICONDUCTOR TECHNICAL DATA
. . . for general purpose power amplification and switching such as output or driver
*Motorola Preferred Device
stages in applications such as switching regulators, converters and power amplifiers.
• Low Collector–Emitter Saturation Voltage 10 AMPERE
V = 1.0 V (Max) @ 8.0 A COMPLEMENTARYCE(sat)
• Fast Switching Speeds SILICON
• Complementary Pairs Simplifies Designs POWER TRANSISTORS
60, 80 VOLTS
MAXIMUM RATINGS
D44H or D45H
Rating Symbol 8 10, 11 Unit
Collector–Emitter Voltage V 60 80 VdcCEO
Emitter Base Voltage V 5.0 VdcEB
Collector Current — Continuous I 10 AdcC
— Peak (1) 20
Total Power Dissipation P WattsD
50@ T = 25 CC
1.67@ T = 25 CA CASE 221A–06
Operating and Storage Junction T , T –55 to 150 C TO–220ABJ stg
Temperature Range
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case R 2.5 C/WJC
Thermal Resistance, Junction to Ambient R 75 C/WJA
Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds T 275 CL
(1) Pulse Width 6.0 ms, Duty Cycle 50%.
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)J
Characteristic Symbol Min Max Unit
DC Current Gain D44H10 h 35 — —FE
(V = 1.0 Vdc, I = 2.0 Adc) D45H10CE C
60 —D44H8,111
(V = 1.0 Vdc, I = 4.0 Adc) D44H10 20 —CE C
D45H10
D44H8,11 40 —
D45H8,11
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1995 1Motorola Bipolar Power Transistor Device Data