1Motorola Bipolar Power Transistor Device Data
4 pages
English

1Motorola Bipolar Power Transistor Device Data

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4 pages
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Niveau: Secondaire, Lycée, Terminale
1Motorola Bipolar Power Transistor Device Data . . . for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. • Low Collector–Emitter Saturation Voltage VCE(sat) = 1.0 V (Max) @ 8.0 A • Fast Switching Speeds • Complementary Pairs Simplifies DesignsÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS ÎÎÎÎÎÎÎÎÎÎÎÎ Rating ÎÎ Symbol ÎÎÎÎÎÎÎ D44H or D45H ÎÎ Unit ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 8 ÎÎÎ 10, 11 ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Voltage ÎÎ VCEO ÎÎÎÎ 60 ÎÎÎ 80 ÎÎ Vdc ÎÎÎÎÎÎÎÎÎÎÎÎ Emitter Base Voltage ÎÎ VEB ÎÎÎÎÎÎÎ 5.0 ÎÎ Vdc ÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current — Continuous — Peak (1) ÎÎ IC ÎÎÎÎÎÎÎ 10 20 ÎÎ Adc ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ Total Power Dissipation @ TC = 25C @ TA = 25C ÎÎ ÎÎ ÎÎ PD ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ 50 1.67 ÎÎ ÎÎ ÎÎ Watts ÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage Junction Temperature Range ÎÎ TJ, Tstg ÎÎÎÎÎÎÎ –55 to 150 ÎÎ C ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ THERMAL CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic ÎÎÎÎ Symbol ÎÎÎÎ Max ÎÎÎÎ Unit ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Junction to Case ÎÎÎÎ R?JC ÎÎÎÎ 2.5 ÎÎÎÎ C/W ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Junction to Ambient ÎÎÎÎ

  • power dissipation

  • electrical characteristics

  • continuous —

  • maximum ratings

  • bipolar power

  • switching such

  • such unintended

  • îîî

  • controlling dimension


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by D44H/DSEMICONDUCTOR TECHNICAL DATA
. . . for general purpose power amplification and switching such as output or driver
*Motorola Preferred Device
stages in applications such as switching regulators, converters and power amplifiers.
• Low Collector–Emitter Saturation Voltage 10 AMPERE
V = 1.0 V (Max) @ 8.0 A COMPLEMENTARYCE(sat)
• Fast Switching Speeds SILICON
• Complementary Pairs Simplifies Designs POWER TRANSISTORS
60, 80 VOLTS
MAXIMUM RATINGS
D44H or D45H
Rating Symbol 8 10, 11 Unit
Collector–Emitter Voltage V 60 80 VdcCEO
Emitter Base Voltage V 5.0 VdcEB
Collector Current — Continuous I 10 AdcC
— Peak (1) 20
Total Power Dissipation P WattsD
50@ T = 25 CC
1.67@ T = 25 CA CASE 221A–06
Operating and Storage Junction T , T –55 to 150 C TO–220ABJ stg
Temperature Range
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case R 2.5 C/WJC
Thermal Resistance, Junction to Ambient R 75 C/WJA
Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds T 275 CL
(1) Pulse Width 6.0 ms, Duty Cycle 50%.
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)J
Characteristic Symbol Min Max Unit
DC Current Gain D44H10 h 35 — —FE
(V = 1.0 Vdc, I = 2.0 Adc) D45H10CE C
60 —D44H8,111
(V = 1.0 Vdc, I = 4.0 Adc) D44H10 20 —CE C
D45H10
D44H8,11 40 —
D45H8,11
Preferred devices are Motorola recommended choices for future use and best overall value.
 Motorola, Inc. 1995 1Motorola Bipolar Power Transistor Device Data

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