IRL3103D1 PD 1608C

Unknown

Description

Niveau: Secondaire, Lycée, Terminale
IRL3103D1 PD 9.1608C 12/16/97 Description The FETKY family of copackaged HEXFET power MOSFETs and Schottky Diodes offer the designer an innovative board space saving solution for switching regulator applications. A low on resistance Gen 5 MOSFET with a low forward voltage drop Schottky diode and minimized component interconnect inductance and resistance result in maximized converter efficiencies. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. l Copackaged HEXFET® Power MOSFET and Schottky Diode l Generation 5 Technology l Logic Level Gate Drive l Minimize Circuit Inductance l Ideal For Synchronous Regulator Application Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V? 64 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V? 45 A IDM Pulsed Drain Current ?? 220 PD @TA = 25°C Power Dissipation 2.0 W PD @TC = 25°C Power Dissipation 89 W Linear Derating Factor 0.56 W/°C VGS Gate-to-Source Voltage ± 16 V TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m) °C Absolute Maximum Ratings VDSS = 30V RDS(on) = 0.014? ID = 64A FETKYTM MOSFET & SCHOTTKY RECTIFIER Parameter Typ.

• gate charge


• current ??


• forward voltage


• drain current


• typical reverse


• schottky diode

Sujets

• Première
• Intrinsic and extrinsic properties
• Schottky diode

Informations

• Publié par: profil-zyan-2012
• Nombre de lectures: 19
• Langue: English

Extrait

PD 9.1608C IRL3103D1

TM FETKY MOSFET& SCHOTTKY RECTIFIER ® l Power MOSFETCopackaged HEXFET D  andSchottky Diode 0V V DSS = 3 l Generation 5 Technology l Logic Level Gate Drive R =0.014W DS(on) l Minimize Circuit Inductance G l Ideal For Synchronous Regulator Application I D = 64A

Description The FETKY family of copackaged HEXFET power MOSFETs and Schottky Diodes offer the designer an innovative board space saving solution for switching regulator applications.A low on resistance Gen 5 MOSFET with a low forward voltage drop Schottky diode and minimized component interconnect inductance and resistance result in maximized converter efficiencies.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Absolute Maximum Ratings Parameter V @10 I D @ T C Continuous Drain Current,= 25°C GS VS I @0V D T C Continuous Drain Current, V= 100°C GS @ 1S I PulsedDrain CurrentQS DM P @T =25°C PowerDissipation D A P @T =25°C PowerDissipation D C Linear Derating Factor V Gate-to-SourceVoltage GS T OperatingJunction and J T StorageTemperature Range STG Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew

Thermal Resistance Parameter R qJC Junction-to-Case R qJA Junction-to-Ambient

S

-

Max. 64 45 220 2.0 89 0.56 ± 16 -55 to+ 150

300 (1.6mm from case ) 10 lbfin (1.1Nm)

Typ. ––– –––

Max. 1.4 62

Units

A

W W W/°C V

°C

Units

°C/W

12/16/97