GA200TD120U HALF BRIDGE IGBT DOUBLE INT A PAK

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Niveau: Secondaire, Lycée, Terminale
4/24/2000 GA200TD120U HALF-BRIDGE IGBT DOUBLE INT-A-PAK Features VCES = 1200V VCE(on) typ. = 2.3V @VGE = 15V, IC = 200A Parameter Typ. Max. Units R?JC Thermal Resistance, Junction-to-Case - IGBT — 0.12 R?JC Thermal Resistance, Junction-to-Case - Diode — 0.20 °C/W R?CS Thermal Resistance, Case-to-Sink - Module 0.1 — Mounting Torque, Case-to-Heatsink — 4.0 N m Mounting Torque, Case-to-Terminal 1, 2 & 3 — 3.0 Weight of Module 400 — g Thermal / Mechanical Characteristics Ultra-FastTM Speed IGBT Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 1200 V IC @ TC = 25°C Continuous Collector Current 200 ICM Pulsed Collector Current 400 A ILM Peak Switching Current‚ 400 IFM Peak Diode Forward Current 400 VGE Gate-to-Emitter Voltage ±20 V VISOL RMS Isolation Voltage, Any Terminal To Case, t = 1 min 2500 PD @ TC = 25°C Maximum Power Dissipation 1040 W PD @ TC = 85°C Maximum Power Dissipation 540 TJ Operating Junction Temperature Range -40 to +150 °C TSTG Storage Temperature Range -40 to +125  UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode  Very low conduction and switching losses  HEXFRED™ antiparallel diodes with ultra- soft recovery  Industry standard package  UL approved Benefits  Increased operating efficiency  Direct

  • mechanical characteristics

  • gate charge

  • energy —

  • typical switching

  • diode forward

  • benefits 

  • tj operating

  • dt


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"HALFBRIDGE" IGBT DOUBLE INTAPAK
Features Generation 4 IGBT technology for high operatingUltraFast: Optimized  frequencies 840 kHz in hard switching, >200  kHz in resonant mode Very low conduction and switching losses diodes with ultra softHEXFRED antiparallel  recovery Industry standard package UL approved Benefits Increased operating efficiency Direct mounting to heatsink Performance optimized for power conversion: UPS,  SMPS, Welding Lower EMI, requires less snubbing
PD  50061C GA200TD120U TM UltraFastSpeed IGBT
Absolute Maximum Ratings Parameter VCESCollectortoEmitter Voltage IC@ TC= 25°C Continuous Collector Current ICMPulsed Collector CurrentQ ILMPeak Switching CurrentIFMPeak Diode Forward Current VGEGatetoEmitter Voltage VISOLRMS Isolation Voltage, Any Terminal To Case, t = 1 min PD@ TC= 25°C Maximum Power Dissipation PD@ TC= 85°C Maximum Power Dissipation TJOperating Junction Temperature Range TSTGStorage Temperature Range
Thermal / Mechanical Characteristics Parameter RθJCThermal Resistance, JunctiontoCase  IGBT RθJCThermal Resistance, JunctiontoCase  Diode RθCSThermal Resistance, CasetoSink  Module Mounting Torque, CasetoHeatsink Mounting Torque, CasetoTerminal 1, 2 & 3S Weight of Module www.irf.com
VCES=1200V
VCE(on) typ.= 2.3V
@VGE=15V,IC=200A
Max. 1200 200 400 400 400 ±20 2500 1040 540 40 to +150 40 to +125
Typ. 0.1 400
Max. 0.12 0.20 4.0 3.0
Units V
A
V
W
°C
Units
°C/W
. N m
g 1
4/24/2000