GA200TD120U HALF BRIDGE IGBT DOUBLE INT A PAK

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Description

Niveau: Secondaire, Lycée, Terminale
4/24/2000 GA200TD120U HALF-BRIDGE IGBT DOUBLE INT-A-PAK Features VCES = 1200V VCE(on) typ. = 2.3V @VGE = 15V, IC = 200A Parameter Typ. Max. Units R?JC Thermal Resistance, Junction-to-Case - IGBT — 0.12 R?JC Thermal Resistance, Junction-to-Case - Diode — 0.20 °C/W R?CS Thermal Resistance, Case-to-Sink - Module 0.1 — Mounting Torque, Case-to-Heatsink — 4.0 N m Mounting Torque, Case-to-Terminal 1, 2 & 3 — 3.0 Weight of Module 400 — g Thermal / Mechanical Characteristics Ultra-FastTM Speed IGBT Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 1200 V IC @ TC = 25°C Continuous Collector Current 200 ICM Pulsed Collector Current 400 A ILM Peak Switching Current‚ 400 IFM Peak Diode Forward Current 400 VGE Gate-to-Emitter Voltage ±20 V VISOL RMS Isolation Voltage, Any Terminal To Case, t = 1 min 2500 PD @ TC = 25°C Maximum Power Dissipation 1040 W PD @ TC = 85°C Maximum Power Dissipation 540 TJ Operating Junction Temperature Range -40 to +150 °C TSTG Storage Temperature Range -40 to +125  UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode  Very low conduction and switching losses  HEXFRED™ antiparallel diodes with ultra- soft recovery  Industry standard package  UL approved Benefits  Increased operating efficiency  Direct

• mechanical characteristics


• gate charge


• energy —


• typical switching


• diode forward


• benefits 


• tj operating


• dt

Informations

• Publié par: profil-zyan-2012
• Nombre de lectures: 21
• Langue: English

Extrait

"HALFBRIDGE" IGBT DOUBLE INTAPAK

Features •Generation 4 IGBT technology •for high operatingUltraFast: Optimized  frequencies 840 kHz in hard switching, >200  kHz in resonant mode •Very low conduction and switching losses ™ •diodes with ultra softHEXFRED antiparallel  recovery •Industry standard package •UL approved Benefits •Increased operating efficiency •Direct mounting to heatsink •Performance optimized for power conversion: UPS,  SMPS, Welding •Lower EMI, requires less snubbing

PD  50061C GA200TD120U TM UltraFastSpeed IGBT

Absolute Maximum Ratings Parameter V CES CollectortoEmitter Voltage I C @ T C = 25°C Continuous Collector Current I CM Pulsed Collector CurrentQ I LM Peak Switching Current‚ I FM Peak Diode Forward Current V GE GatetoEmitter Voltage V ISOL RMS Isolation Voltage, Any Terminal To Case, t = 1 min P D @ T C = 25°C Maximum Power Dissipation P D @ T C = 85°C Maximum Power Dissipation T J Operating Junction Temperature Range T STG Storage Temperature Range

Thermal / Mechanical Characteristics Parameter R θJC Thermal Resistance, JunctiontoCase  IGBT R θJC Thermal Resistance, JunctiontoCase  Diode R θCS Thermal Resistance, CasetoSink  Module Mounting Torque, CasetoHeatsink Mounting Torque, CasetoTerminal 1, 2 & 3S Weight of Module www.irf.com

V CES = 1200 V

V CE (on) typ. = 2.3V

@V GE = 15V , I C = 200A

Max. 1200 200 400 400 400 ±20 2500 1040 540 40 to +150 40 to +125

Typ. — — 0.1 — — 400

Max. 0.12 0.20 — 4.0 3.0 —

Units V

A

V

W

°C

Units

°C/W

. N m

g 1

4/24/2000