SGS THOMSON PREFERRED SALESTYPE

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Niveau: Secondaire, Lycée, Terminale
2N3055 SILICON NPN TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The 2N3055 is a silicon epitaxial-base NPN transistor in Jedec TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. INTERNAL SCHEMATIC DIAGRAM October 1995 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) 100 V VCER Collector-Emit ter Voltage (RBE = 100?) 70 V VCEO Collector-Emit ter Voltage (IB = 0) 60 V VEBO Emitter-Base Voltage (IC = 0) 7 V IC Collector Current 15 A IB Base Current 7 A Ptot Total Dissipat ion at Tc ≤ 25 oC 115 W Tstg Storage Temperature -65 to 200 oC Tj Max. Operat ing Junction Temperature 200 oC 1 2 TO-3 1/4

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  • emitter-base voltage

  • current gain

  • collector-emitter sustaining

  • off current


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SGS-THOMSON PREFERRED SALESTYPE
DESCRIPTION The 2N3055 is a silicon epitaxial-baseNPN transistor in Jedec TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers.
ABSOLUTE MAXIMUM RATINGS S ymb olParamet er VCBOCollector -B aseVoltage (IE= 0) VCERVoltage (RCollector -E mit terBE= 100W) VCEOVoltage (ICollector -E mit terB= 0) VEB OEmitter- Bas eVoltage (IC= 0) ICCollector Current IBBas eCurr ent o Pto tat TDis sipat ionT ot alc)25 C Ts tgureStorage Temperat TjM ax.J unctionO perat ingTem perature
October 1995
2N3055
SILICON NPN TRANSISTOR
1 2
TO-3
INTERNAL SCHEMATIC DIAGRAM
V alu e 100 70 60 7 15 7 115 -65 to 200 200
Unit V V V V A A W o C o C
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