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Description

BPW21R Vishay Telefunken 1 (5)Rev. 2, 20-May-99 • FaxBack [phone]Document Number 81519 Silicon PN Photodiode Description BPW21R is a planar Silicon PN photodiode in a hermetically sealed short TO–5 case, especially de- signed for high precision linear applications. Due to its extremely high dark resistance, the short circuit photocurrent is linear over seven decades of il- lumination level. On the other hand, there is a strictly logarithmic correlation between open circuit voltage and illumina- tion over the same range. The device is equipped with a flat glass window with built in color correction filter, giving an approximation to the spectral response of the human eye. Features Hermetically sealed TO–5 case Flat glass window with built–in color correction fil- ter for visible radiation Cathode connected to case Wide viewing angle ? = ± 50 Large radiant sensitive area (A=7.5 mm2) Suitable for visible radiation High sensitivity Low dark current High shunt resistance Excellent linearity For photodiode and photovoltaic cell operation 94 8394 Applications Sensor in exposure and color measuring purposes

• relative reverse


• reverse voltage


• bpw21r vishay


• voltage ir


• klx


• low dark current


• radiation high sensitivity


• all claims

Informations

• Publié par: pefav
• Nombre de lectures: 57
• Langue: English

Extrait

94 8394
BPW21R
Vishay Telefunken
Silicon PN Photodiode
Description
BPW21R is a planar Silicon PN photodiode in a
hermetically sealed short TO–5 case, especially de-
signed for high precision linear applications.
Due to its extremely high dark resistance, the short
circuit photocurrent is linear over seven decades of il-
lumination level.
On the other hand, there is a strictly logarithmic
correlation between open circuit voltage and illumina-
tion over the same range.
The device is equipped with a flat glass window with
built in color correction filter, giving an approximation
to the spectral response of the human eye.
Features
Hermetically sealed TO–5 case
Flat glass window with built–in color correction fil-
ter for visible radiation
Cathode connected to case
Wide viewing angle = ± 50
2Large radiant sensitive area (A=7.5 mm )
Suitable for visible radiation
High sensitivity
Low dark current
High shunt resistance
Excellent linearity
For photodiode and photovoltaic cell operation
Applications
Sensor in exposure and color measuring purposes
Document Number 81519 www.vishay.de • FaxBack [phone]
Rev. 2, 20-May-99 1 (5)
jBPW21R
Vishay Telefunken
Absolute Maximum Ratings
T = 25 Camb
Parameter Test Conditions Symbol Value Unit
Reverse Voltage V 10 VR
Power Dissipation T 50 C P 300 mWamb V
Junction Temperature T 125 Cj
Operating Temperature Range T –55...+125 Camb
Storage T T Cstg
Soldering Temperature t 5 s T 260 Csd
Thermal Resistance Junction/Ambient R 250 K/WthJA
Basic Characteristics
T = 25 Camb
Parameter Test Conditions Symbol Min Typ Max Unit
Forward Voltage I = 50 mA V 1.0 1.3 VF F
Breakdown Voltage I = 20 A, E = 0 V 10 VR (BR)
Reverse Dark Current V = 5 V, E = 0 I 2 30 nAR ro
Diode Capacitance V = 0 V, f = 1 MHz, E = 0 C 1.2 nFR D
V = 5 V, C 400 pFR D
Dark Resistance V = 10 mV R 38 GR D
Open Circuit Voltage E = 1 klx V 280 450 mVA o
Temp. Coefficient of V E TK –2 mV/Ko A Vo
Short Circuit Current E = 1 klx I 4.5 9 AA k
Temp. Coefficient of I E TK –0.05 %/Kk A lk
Reverse Light Current E = 1 klx, V = 5 V I 4.5 9 AA R ra
–2 5Sensitivity V = 5 V, E = 10 ...10 lx S 9 nA/lxR A
Angle of Half Sensitivity ±50 deg
Wavelength of Peak Sensitivity 565 nmp
Range of Spectral Bandwidth 420...675 nm0.5
Rise Time V = 0 V, R = 1k , t 3.1 sR L r
= 660 nm
Fall Time V = 0 V, R = 1k , t 3.0 sR L f
= 660 nm
www.vishay.de • FaxBack [phone] Document Number 81519
2 (5) Rev. 2, 20-May-99
jBPW21R
Vishay Telefunken
Typical Characteristics (T = 25 C unless otherwise specified)amb
410 1400
1200
310 E=0
1000
f=1MHz
800
210
600
V =5VR
400
110
200
0 010
120 10020 40 60 80 100 0.1 1 10
94 8468 T – Ambient Temperature ( °C ) 94 8473 V – Reverse Voltage ( V )amb R
Figure 1. Reverse Dark Current vs. Ambient Temperature Figure 4. Diode Capacitance vs. Reverse Voltage
1.3
1.0
1.2
0.8
1.1
0.6
1.0
0.4
0.9 0.2 V Eye
0.8 0
120 7500 2040 6080 100 350 450 550 650
94 8738 T – Ambient Temperature ( °C ) 94 8477 – Wavelength ( nm )amb
Figure 2. Relative Reverse Light Current vs. Figure 5. Relative Spectral Sensitivity vs. Wavelength
Ambient Temperature
0° 10 20
210 ° ° 30°
110
0 40°10
1.0
–110 0.9 50°
–2 0.810 60°
70°
–310 0.7
80°
–410
–2 –1 0 1 2 3 410 10 10 10 10 10 10 0.6 0.4 0.2 0 0.2 0.4 0.6
94 8476 E – Illuminance ( lx ) 94 8475A
Figure 3. Short Circuit Current vs. Illuminance Figure 6. Relative Radiant Sensitivity vs.
Angular Displacement
Document Number 81519 www.vishay.de • FaxBack [phone]
Rev. 2, 20-May-99 3 (5)

I – Short Circuit Current ( A ) I – Relative Reverse Light Current I – Reverse Dark Current ( nA )
k ra rel ro
S – Relative Sensitivity S ( ) – Relative Spectral Sensitivity C – Diode Capacitance ( pF )
rel rel DBPW21R
Vishay Telefunken
Dimensions in mm
96 12181
www.vishay.de • FaxBack [phone] Document Number 81519
4 (5) Rev. 2, 20-May-99BPW21R
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: [phone], Fax number: 49 (0)7131 67 2423
Document Number 81519 www.vishay.de • FaxBack [phone]
Rev. 2, 20-May-99 5 (5)This datasheet has been downloaded from:
www.DatasheetCatalog.com
Datasheets for electronic components.