APT website http: www advancedpower com

Pdoumergue

Description

Niveau: Supérieur, Doctorat, Bac+8
APTM10AM02F A PT M 10 A M 02 F– R ev 1 O ct ob er , 2 00 4 APT website – 1 - 6 OUTVBUS E1 G1 0/VBUS G2 E2 Absolute maximum ratings These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 100 V Tc = 25°C 495 ID Continuous Drain Current Tc = 80°C 370 IDM Pulsed Drain current 1900 A VGS Gate - Source Voltage ±30 V RDSon Drain - Source ON Resistance 2.25 m? PD Maximum Power Dissipation Tc = 25°C 1250 W IAR Avalanche current (repetitive and non repetitive) 100 A EAR Repetitive Avalanche Energy 50 EAS Single Pulse Avalanche Energy 3000 mJ VDSS = 100V RDSon = 2.25m? max @ Tj = 25°C ID = 495A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS V® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance Phase leg MOSFET Power Module

• source voltage


• gate charge


• vgs


• drain current


• junction temperature


• low voltage


• package characteristics


• avalanche current

Sujets

• Junction temperature
• Low voltage

Informations

• Publié par: profil-zyak-2012
• Nombre de lectures: 106

Extrait

hase leg MOSFET Power Module

APTM10AM02F

V DSS = 100V R DSon = 2.25mΩmax @ Tj = 25°C I D = 495A @ Tc = 25°C

Applicatio •Welding converters •Switched Mode Power Supplies •Uninterruptible Power Supplies •Motor control Features ® •Power MOS VFREDFETs -Low R DSon -Low input and Miller capacitance -Low gate charge -Avalanche energy rated -Very rugged •Kelvin source for easy drive •Very low stray inductance -Symmetrical design -M5 power connectors G1 V BUS0/VBUS OUT E 1 Benefits E 2 •Outstanding performance at high frequency operation G2 •Direct mounting to heatsink (isolated package) •Low junction to case thermal resistance Absolute maximumratings ymbol ParameterMa ratingsUnit V DSS 100 V Drain- Source Breakdown Voltage T c = 25°C495 I D Drain Current Continuous T c 370 A = 80°C I DM  Pulsed1900Drain current V GS - Source Voltage Gate±30 V R DSon - Source ON Resistance2.25 m Drain Ω P D  MaximumTPower Dissipation c 1250 W= 25°C I AR current (repetitive and non repetitive)100 A Avalanche E AR  RepetitiveAvalanche Energy50 mJ E AS Pulse Avalanche Energy Single3000  TheseDevices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT websitehttp:/ www.advancedpower.com 1 - 6