HALF BRIDGE DRIVER Features Floating channel designed for bootstrap operation

Description

Niveau: Supérieur, Doctorat, Bac+8
Typical Connection HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 10 to 20V • Undervoltage lockout for both channels • 3.3V and 5V input logic compatible • Matched propagation delay for both channels • Logic and power ground +/- 5V offset. • Lower di/dt gate driver for better noise immunity • Output source/sink current capability 1.4A/1.8A Description IR21834 IR2183 Packages 1 VCC VB VS HO LOCOM HIN LINLIN HIN up to 600V TO LOAD VCC HIN up to 600V TO LOAD VCC VB VS HO LO COM HIN DT VSS LIN VCC LIN VSS RDT IR2183(4) (S) Data Sheet No. PD60173-E (Refer to Lead Assignment for correct pin configuration) This/These diagram(s) show electrical connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout. 14-Lead PDIP IR21834 8-Lead SOIC IR2183S 14-Lead SOIC IR21834S 8-Lead PDIP IR2183 The IR2183(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels.

• logic fixed supply


• logic


• lead pdip


• current —


• driver output


• vcc


• vho high


• vss


• output voltage


• side floating

Informations

• Publié par: profil-zyak-2012
• Nombre de lectures: 39
• Langue: English

Extrait

1

LOTAOD

IR21834

up to 600V

Data Sheet No. PD60173-E

IR2183
(
4
) (S)
HALF-BRIDGE DRIVER
Features

Floating channel designed for bootstrap operation
Packages
Fully operational to +600V
Tolerant to negative transient voltage
14-Lead PDIP
dV/dt immune
IR21834

Gate drive supply range from 10 to 20V
8-Lead SOIC

Undervoltage lockout for both channels
IR2183S

3.3V and 5V input logic compatible

Matched propagation delay for both channels

Logic and power ground +/- 5V offset.

Lower di/dt gate driver for better noise immunity
8-Lead PDIP

Output source/sink current capability 1.4A/1.8A
IR218314-Lead SOIC
IR21834S
Description
The IR2183(4)(S) are high voltage,
IR2181/IR2183/IR2184 Feature Comparison
high speed power MOSFET and IGBT
drivers with dependent high and low
side referenced output channels. Pro-
prietary HVIC and latch immune
CMOS technologies enable rugge-
dized monolithic construction. The
logic input is compatible with standard
CMOS or LSTTL output, down to 3.3V
logic. The output drivers feature a high
pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to
drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
Typical Connection
up to 600V
VCCVVBCCHIN
HINHO
LIN
LINV
SLOTAOD
MOCOLIR2183
OHVVVHI
C
N
C
H
C
I
C
NV
SB
LINLIN
(Refer to Lead Assignment for correct pin
DT
ecleocntfriigcuarl actioonnn) eTchtiiso/nTsh oensley . d iPalgeraasme( rs)e fsehr otow our
V
SS
R
DT
V
SS
COLMO
Application Notes and DesignTips for proper circuit
board layout.
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IR2183
(
4
) (S)
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions.
SymbolDefinitionMin.Max.Units
V
B
High side floating absolute voltage-0.3625
V
S
High side floating supply offset voltageV
B
- 25V
B
+ 0.3
V
HO
High side floating output voltageV
S
- 0.3V
B
+ 0.3
V
CC
Low side and logic fixed supply voltage-0.325V
V
LO
Low side output voltage-0.3V
CC
+ 0.3
DTProgrammable dead-time pin voltage (IR21834 only)V
SS
- 0.3V
CC
+ 0.3
V
IN
Logic input voltage (HIN &
LIN
)V
SS
- 0.3V
SS
+ 10
V
SS
Logic ground (IR21834 only)V
CC
- 25V
CC
+ 0.3
dV
S
/dtAllowable offset supply voltage transient50V/ns
P
D
Package power dissipation @ T
A


+25°C(8-lead PDIP)1.0
(8-lead SOIC)0.625
(14-lead PDIP)1.6W
(14-lead SOIC)1.0
Rth
JA
Thermal resistance, junction to ambient(8-lead PDIP)125
(8-lead SOIC)200
(14-lead PDIP)75°C/W
(14-lead SOIC)120
T
J
Junction temperature150
T
S
Storage temperature-50150°C
T
L
Lead temperature (soldering, 10 seconds)300
Recommended Operating Conditions
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SSSSymbolDefinitionMin.Max.Units
VBHigh side floating supply absolute voltageV
S
+ 10V
S
+ 20
V
S
High side floating supply offset voltageNote 1600
V
HO
High side floating output voltageV
S
V
B
V
CC
Low side and logic fixed supply voltage1020
V
LO
Low side output voltage0V
CC
V
V
IN
Logic input voltage (HIN & LIN)V
SS
V
SS
+ 5
DTProgrammable dead-time pin voltage (IR21834 only)V
SS
V
CC
V
SS
Logic ground (IR21834 only)-55
T
A
Ambient temperature-40125
°
C
Note 1: Logic operational for V
S
of -5 to +600V. Logic state held for V
S
of -5V to -V
BS
. (Please refer to the Design Tip
DT97-3 for more details).
Note 2: HIN and LIN pins are internally clamped with a 5.2V zener diode.
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IR2183
(
4
) (S)

Dynamic Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15V, V
SS
= COM, C
L
= 1000 pF, T
A
= 25°C, DT = VSS unless otherwise specified.
SymbolDefinition Min. Typ.Max.UnitsTest Conditions
tonTurn-on propagation delay180270VS = 0V
toffTurn-off propagation delay220330V
S
= 0V or 600V
MTDelay matching
|
ton - toff
|
035
trTurn-on rise time4060 nsecV
S
= 0V
tfTurn-off fall time2035V
S
= 0V
DTDeadtime: LO turn-off to HO turn-on(DT
LO-HO) &
280400520RDT= 0
HO turn-off to LO turn-on (DT
HO-LO)
456

sec RDT = 200k
(IR21834)
MDTDeadtime matching =
|
DT
LO-HO
- DT
HO-LO
|
050 nsec RDT=0
0600 RDT = 200k
(IR21834)

Static Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15V, V
SS
= COM, DT= V
SS
and T
A
= 25°C unless otherwise specified. The V
IL
, V
IH
and I
IN
ppaarraammeetteerrss aarree rreeffeerreenncceedd ttoo CVO
SS
M/ CanOdM aaren da parplei caapbpleli ctao btlhee t ro etshpee rcetisvpe eoctuitvpeu it nlpeuatd lse: aHdsO: aHnINd LanOd. LIN. The V
O
, I
O
and Ron
SymbolDefinitionMin.Typ.Max.UnitsTest Conditions
V
IH
Logic 1 input voltage for HIN & logic 0 for
LIN
2.7V
CC
= 10V to 20V
V
IL
Logic 0 input voltage for HIN & logic 1 for
LIN
0.8VV
CC
= 10V to 20V
V
OH
High level output voltage, V
BIAS
- V
O
1.2I
O
= 0A
V
OL
Low level output voltage, V
O
0.1I
O
= 0A
I
LK
Offset supply leakage current50V
B
= V
S
= 600V
I
QBS
Quiescent V
BS
supply current2060150µAV
IN
= 0V or 5V
I
QCC
Quiescent V
CC
supply current0.41.01.6mAV
IN
= 0V or 5V
I
IN+
Logic 1 input bias current520HIN = 5V,
LIN
= 0V
I
IN-
Logic 0 input bias current12µAHIN = 0V,
LIN
= 5V
V
CCUV+
V
CC
and V
BS
supply undervoltage positive going8.08.99.8
V
BSUV+
threshold
V
CCUV-
V
CC
and V
BS
supply undervoltage negative going7.48.29.0V
V
BSUV-
threshold
V
CCUVH
Hysteresis0.30.7
V
BSUVH
I
O+
Output high short circuit pulsed current1.41.9V
O
= 0V,
APW

10 µs
I
O-
Output low short circuit pulsed current1.82.3V
O
= 15V,
PW

10 µs

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3

IR2183
(
4
) (S)

Functional Block Diagrams

3812 VSS/COM
HIN
LEVELPULSE
SHIFTGENERATOR

4

DT
DEADTIME &
SHPOROETV-ETNHTRIOOUNGH
V5+VSS/COM
LIN
LEVELDELAY
TFIHSSSV

VUDETECT
RHVPULSERQ
LEVELFILTERS
SHIFTER

VUDETECT

VU 21834
DETECT
RHVPULSERQ
LEVELFILTERS
HIN
VSS/COMSHIFTER
LEVELPULSE
SHIFTGENERATOR

DEADTIME &
DT
SHPOROETV-TEHNRTIOOUNGH
V5+VSS/COM
LIN
LEVELDELAY
TFIHSSSV

VUDETECT

BVOHVS

VCCOLMOC

BVOHVS

VCCOLMOC

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IR2183
(
4
) (S)

Lead Definitions
SymbolDescription
HINLogic input for high side gate driver output (HO), in phase (referenced to COM for IR2183 and
VSS for IR21834)
LINLogic input for low side gate driver output (LO), out of phase (referenced to COM for IR2183
and VSS for IR21834)
DTProgrammable dead-time lead, referenced to VSS. (IR21834 only)
VSSLogic Ground (21834 only)
V
B
High side floating supply
HOHigh side gate driver output
V
S
High side floating supply return
V
CC
Low side and logic fixed supply
LOLow side gate driver output
COMLow side return
Lead Assignments
1HINVB
8
2LINHO7
3COMVS6
4LOVCC5
8-Lead PDIP
IR2183

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1HIN
1
4
2LINVB13
3VSSHO12
4DTVS11
5COM10
96OL87VCC14-Lead PDIP
IR21834

1HINVB
8
2LINHO7
3COMVS6
4LOVCC5
8-Lead SOIC
IR2183S

1HIN
1
4
2LINVB13