MAXIMUM RATINGS All Ratings: TC 25°C unless otherwise specified

Darelb

Description

Niveau: Supérieur, Doctorat, Bac+8
05 0- 71 57 R ev A 4 -2 00 4 MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. APT30M17JLL 300V 135A 0.017? G D S CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - SO T-2 27 G S S D ISOTOP® UL Recognized • Lower Input Capacitance • Increased Power Dissipation • Lower Miller Capacitance • Easier To Drive • Lower Gate Charge, Qg • Popular SOT-227 Package Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7 ® combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. POWER MOS 7 R MOSFET Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 (VGS = 10V, ID = 67.5A) Zero Gate Voltage Drain Current (VDS = 300V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 240V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID =

• source voltage


• body diode


• drain current


• gate voltage


• diode forward


• switching energy


• lower miller


• current

Sujets

• Transfer
• Thomson
• Threshold voltage
• Current

Informations

• Publié par: profil-zyak-2012
• Nombre de lectures: 11
• Langue: English

Extrait

APT30M17JLL
300V135A0.017
Ω

R POWER MOS 7 MOSFET
Power MOS 7
®

is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS.
®
Both conduction and switching
losses are addressed with Power MOS 7 by significantly lowering R
DS(ON)
and Q
g
. Power MOS 7
®

combines lower conduction and switching losses
®
"UL Recognized"
along with exceptionally fast switching speeds inherent with APT's
ISOTOP
patented metal gate structure.
D•Lower Input Capacitance•Increased Power Dissipation
•Lower Miller Capacitance•Easier To Drive
G
•Lower Gate Charge, Qg•Popular SOT-227 Package
S
MAXIMUM RATINGS
All Ratings: T
C
= 25°C unless otherwise specified.
SymbolParameterAPT30M17JLLUNIT
V
DSS
Drain-Source Voltage
300
Volts
I
D
Continuous Drain Current @ T
C
= 25°C
135
Amps
I
DM
Pulsed Drain Current
1
540
V
GS
Gate-Source Voltage Continuous
±30
Volts
V
GSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ T
C
= 25°C
694
Watts
PDLinear Derating Factor
5.56
W/°C
T
J
,T
STG
Operating and Storage Junction Temperature Range
-55 to 150
°C
T
L
Lead Temperature: 0.063" from Case for 10 Sec.
300
I
AR
Avalanche Current
1
(Repetitive and Non-Repetitive)
135
Amps
E
AR
Repetitive Avalanche Energy
1
50
mJ
E
AS
Single Pulse Avalanche Energy
4
3600
STATIC ELECTRICAL CHARACTERISTICS
SymbolCharacteristic / Test ConditionsMINTYPMAXUNIT
BV
DSS
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250µA)
300
Volts
R
DS(on)
Drain-Source On-State Resistance
2
(V
GS
= 10V, I
D
= 67.5A)
0.017
Ohms
IZero Gate Voltage Drain Current (V
DS
= 300V, V
GS
= 0V)
100
µA
DSS
Zero Gate Voltage Drain Current (V
DS
= 240V, V
GS
= 0V, T
C
= 125°C)
500
I
GSS
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
±100
nA
V
GS(th)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 5mA)
35
Volts
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com

DYNAMIC CHARACTERISTICSAPT30M17JLL
SymbolCharacteristicTest ConditionsMINTYPMAXUNIT
C
iss
Input Capacitance
V

= 0V
14100
SGC
oss
Output Capacitance
V
DS

= 25V
3285
pF
C
rss
Reverse Transfer Capacitance
f

= 1 MHz
185
Q
g
Total Gate Charge
3V
GS

= 10V
230
Q
gs
Gate-Source Charge
V
DD

= 150V
85
nC
I
D

= 135A

@ 25°C
Q
gd
Gate-Drain ("Miller") Charge
105
tTurn-on Delay Time
RESISTIVE SWITCHING
19
d(on)V
GS

=

15V
t
r
Rise Time
V
DD

=

150V
31
t
d(off)
Turn-off Delay Time
I
D

=

135A

@ 25°C
44ns
R

=

0.6
Ω
t
f
Fall Time
G
13
INDUCTIVE SWITCHING @ 25°C
E
on
Turn-on Switching Energy
6V

=

200V, V= 15V
1120
SGDDE
off
Turn-off Switching Energy
I
D

=

135A, R
G

=

5
Ω
1250
INDUCTIVE SWITCHING @ 125°C
µ
J
E
on
Turn-on Switching Energy
6V

=

200V, V= 15V
1325
SGDDE
off
Turn-off Switching Energy
I
D

=

135A, R
G

=

5
Ω
1460
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
SymbolCharacteristic / Test ConditionsMINTYPMAXUNIT
I
S
Continuous Source Current (Body Diode)
135
spmAI
SM
Pulsed Source Current
1
(Body Diode)
540
V
SD
Diode Forward Voltage
2
(V
GS
= 0V, I
S
= -I
D
135A
)
1.3
Volts
t
rr
Reverse Recovery Time (I
S
= -I
D
135A
, dl
S
/dt = 100A/µs)
620
ns
Q
rr
Reverse Recovery Charge (I
S
= -I
D
135A
, dl
S
/dt = 100A/µs)
14
µC
dv
/
dt
Peak Diode Recovery
dv
/
dt 5
5
V/ns
THERMAL CHARACTERISTICS
SymbolCharacteristicMINTYPMAXUNIT
R
θ
JC
Junction to Case
0.18
W/C°R
θ
JA
Junction to Ambient
40
1Repetitive Rating: Pulse width limited by maximum junction4Starting T
j

=

+25°C, L = 0.40mH, R
G

=

25
Ω
, Peak I
L
= 135A
temperature5
dv
/
dt
numbers reflect the limitations of the test circuit rather than the
2Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%device itself.
IS

≤
-
ID
135A
di
/
dt

≤
700A/µs

VR

≤
300V

TJ

≤
150
°
C
3See MIL-STD-750 Method 34716 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
02.00.160.9
7.021.05.00.08Note:
t13.00.04
t2
t0.1SINGLE PULSE
Duty Factor D = 1/t2
0.05
Peak TJ = PDM x Z
θ
JC + TC
010
-5
10
-4
10
-3
10
-2
10
-1
1.010
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

Typical Performance Curves
RC MODEL
tJeumncpt.i (o
°
nC)
0.02680.0456F
rewoP(watts)0.1090.765F
0.042623.5F
Case temperature. (
°
C)
FIGURE 2,

TRANSIENT

THERMAL

IMPEDANCE

MODEL
004VDS2>5 I0Dµ S(OENC). xP URLDSSE (TOENS)MTAX.
350
@ <0.5 % DUTY CYCLE
003052002TJ = -55°C
051TJ = +25°C
001TJ = +125°C
0500246810
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4,

TRANSFER CHARACTERISTICS
041021001080604020255075100125150
T
C
, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
I
D
= 67.5A
V
GS
= 10V
0.25.10.15.00.0-50-250255075100125150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE

APT30M17JLL
053VGS =15 & 10V
003V80522007.5V
051V7001V5.605V6V5.50051015202530
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW

VOLTAGE

OUTPUT CHARACTERISTICS
04.1VNO=R M10AVL I Z@E D 6T7.O5A
SG03.102.101.1VGS=10V
00.1VGS=20V
09.00.80050100150200250300
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
02.151.101.150.100.159.00.90-50-250255075100125150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
2.11.10.19.08.07.00.6-50-250255075100125150
T
C
, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

540
LIOMIPTEERDA BTIYO RN HE (ROEN)
SD00105TTJC ==++12550°°CC
10SINGLE PULSE
110100300
V, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIG
D
U
S
RE 10, MAXIMUM SAFE OPERATING AREA
16
I
D
= 100A
VDS= 60V
21VDS= 150VVDS= 240V
84

Sµ001Sm1Sm01

0050100150200
Q
g
, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
052002t
d(off)
V
DD
= 200V
150
R
G
= 5
Ω
T
J
= 125°C
L = 100µH
00105t
d(on)
0406080100120
)A( IFIGURE 14, DELAY
D
TIMES vs CURRENT
00510021900E
on
Effo600
V
DD
= 200V
R
G
= 5
Ω
300
T
J
= 125°C
L = 100µH
E
ON
includes
diode reverse recovery.
0405060708090100110120
I
D
(A)
FIGURE 16, SWITCHING ENERGY vs CURRENT

APT30M17JLL
CssiCsso

30,000
10,000
000,1Cssr10001020304050
V, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11
D
,
S

CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
004100TJ =+150°C
TJ =+25°C

01

10.30.50.70.91.11.31.5
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13,

SOURCE-DRAIN DIODE FORWARD VOLTAGE
100
V
DD
=