The MC34262 MC33262 are active power factor controllers specifically designed for use as a preconverter in electronic ballast and in off–line power converter applications These integrated circuits feature an internal startup timer for stand–alone applications a one quadrant multiplier for near unity power factor zero current detector to ensure critical conduction operation transconductance error amplifier quickstart circuit for enhanced startup trimmed internal bandgap reference current sensing comparator and a totem pole output ideally suited for driving a power MOSFET
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The MC34262 MC33262 are active power factor controllers specifically designed for use as a preconverter in electronic ballast and in off–line power converter applications These integrated circuits feature an internal startup timer for stand–alone applications a one quadrant multiplier for near unity power factor zero current detector to ensure critical conduction operation transconductance error amplifier quickstart circuit for enhanced startup trimmed internal bandgap reference current sensing comparator and a totem pole output ideally suited for driving a power MOSFET

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Description

Niveau: Supérieur, Doctorat, Bac+8
Power Factor Controllers The MC34262/MC33262 are active power factor controllers specifically designed for use as a preconverter in electronic ballast and in off–line power converter applications. These integrated circuits feature an internal startup timer for stand–alone applications, a one quadrant multiplier for near unity power factor, zero current detector to ensure critical conduction operation, transconductance error amplifier, quickstart circuit for enhanced startup, trimmed internal bandgap reference, current sensing comparator, and a totem pole output ideally suited for driving a power MOSFET. Also included are protective features consisting of an overvoltage comparator to eliminate runaway output voltage due to load removal, input undervoltage lockout with hysteresis, cycle–by–cycle current limiting, multiplier output clamp that limits maximum peak switch current, an RS latch for single pulse metering, and a drive output high state clamp for MOSFET gate protection. These devices are available in dual–in–line and surface mount plastic packages. • Overvoltage Comparator Eliminates Runaway Output Voltage • Internal Startup Timer • One Quadrant Multiplier • Zero Current Detector • Trimmed 2% Internal Bandgap Reference • Totem Pole Output with High State Clamp • Undervoltage Lockout with 6.0 V of Hysteresis • Low Startup and Operating Current • Supersedes Functionality of SG3561 and TDA4817 Simplified Block Diagram Voltage Feedback Input Multiplier, Latch, PWM, Timer, & Logic Error Amp Multiplier Undervoltage Lockout 2.5V Reference Zero Current Detector 5 8 6 7 4 3 2 1 Drive Output Gnd Zero Current Detect Input Multiplier Input Compensation V

  • voltage feedback

  • current sense

  • operating ambient

  • output voltage

  • input threshold

  • ambient temperature

  • voltage range

  • power supply


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Publié par
Nombre de lectures 54
Langue English

Extrait

ON Semiconductor
Power Factor Controllers The MC34262/MC33262 are active power factor controllers specifically designed for use as a preconverter in electronic ballast and in off±line power converter applications. These integrated circuits feature an internal startup timer for stand±alone applications, a one quadrant multiplier for near unity power factor, zero current detector to ensure critical conduction operation, transconductance error amplifier, quickstart circuit for enhanced startup, trimmed internal bandgap reference, current sensing comparator, and a totem pole output ideally suited for driving a power MOSFET. Also included are protective features consisting of an overvoltage comparator to eliminate runaway output voltage due to load removal, input undervoltage lockout with hysteresis, cycle±by±cycle current limiting, multiplier output clamp that limits maximum peak switch current, an RS latch for single pulse metering, and a drive output high state clamp for MOSFET gate protection. These devices are available in dual±in±line and surface mount plastic packages. Overvoltage Comparator Eliminates Runaway Output Voltage Internal Startup Timer One Quadrant Multiplier Zero Current Detector Trimmed 2% Internal Bandgap Reference Totem Pole Output with High State Clamp Undervoltage Lockout with 6.0 V of Hysteresis Low Startup and Operating Current Supersedes Functionality of SG3561 and TDA4817 Simplified Block Diagram
Multiplier Input
Zero Current Detector
2.5V Reference
Gnd 6
Multiplier Latch PWM Timer & Logic
Multiplier
Undervoltage Lockout
Overvoltage Comparator  1.08 Vref Error Amp  Vref Quickstart
Compensation
Semiconductor Components Industries, LLC, 2001 March, 2001 ± Rev. 2
2
Zero Current 5 Detect Input
VCC 8
Drive Output 7 Current Sense Input 4
Voltage Feedback 1Input
1
8
8
1
MC34262 MC33262
1
POWER FACTOR CONTROLLERS
SEMICONDUCTOR TECHNICAL DATA
P SUFFIX PLASTIC PACKAGE CASE 626
D SUFFIX PLASTIC PACKAGE CASE 751 (SO±8)
PIN CONNECTIONS
Voltage Feedback Input 1 Compensation 2 Multiplier Input 3 Current Sense 4 Input  Top View)
8 VCC 7 Drive Output 6 Gnd 5ZeDreot eCctu Irnrepnutt
ORDERING INFORMATION Operating Device Temperature Range Package MC34262D SO±8 TA= 0°to +85°C MC34262P Plastic DIP MC33262DTA= ±40°to C SO±8 +105° MC33262P Plastic DIP
Publication Order Number: MC34262/D
MAXIMUM RATINGS
MC34262 MC33262
Rating Symbol Value Unit Total Power Supply and Zener Current (ICC+ IZ) 30 mA Output Current, Source or Sink (Note 1) IO500 mA Current Sense, Multiplier, and Voltage Feedback Inputs Vin±1.0 to +10 V Zero Current Detect Input IinmA High State Forward Current 50 Low State Reverse Current ±10 Power Dissipation and Thermal Characteristics P Suffix, Plastic Package, Case 626 Maximum Power Dissipation @ TA= 70°C PD800 mW Thermal Resistance, Junction±to±Air RJA100°C/W D Suffix, Plastic Package, Case 751 Maximum Power Dissipation @ TA= 70°C PD450 mW Thermal Resistance, Junction±to±Air RJA178°C/W Operating Junction Temperature TJ+150°C Operating Ambient Temperature (Note 3) TA°C MC34262 0 to + 85 MC33262 ± 40 to +105 Storage Temperature Tstg± 65 to +150°C ELECTRICAL CHARACTERISTICS(VCC= 12 V (Note 2), for typical values TA= 25°C, for min/max values TAis the operating ambient temperature range that applies [Note 3], unless otherwise noted.) Characteristic Symbol Min Typ Max Unit ERROR AMPLIFIER Voltage Feedback Input Threshold VFBV TA= 25° 2.5 2.535C 2.465 TA= Tlowto Thigh(VCC 2.54 Ð 2.44= 12 V to 28 V) Line Regulation (VCC= 12 V to 28 V, TA= 25°C) ReglineÐ 1.0 10 mV Input Bias Current (VFB I= 0 V)IBÐ ± ± 0.1 0.5A Transconductance (TA= 25°C) gm 13080 100mho Output Current IOA Source (VFB Ð= 2.3 V) Ð 10 Sink (VFB Ð= 2.7 V) Ð 10 Output Voltage Swing V High State (VFB= 2.3 V) VOH(ea) Ð5.8 6.4 Low State (VFB= 2.7 V) VOL(ea) 2.4Ð 1.7 OVERVOLTAGE COMPARATOR Voltage Feedback Input Threshold VFB(OV)1.065 VFB1.08 VFB1.095 VFBV MULTIPLIER Input Bias Current, Pin 3 (VFB= 0 V) IIBÐ ± 0.1 ± 0.5A Input Threshold, Pin 2 Vth(M)1.05 VOL(EA)1.2 VOL(EA)Ð V Dynamic Input Voltage Range V Multiplier Input (Pin 3) VPin 3 00 to 2.5 Ð to 3.5 Compensation (Pin 2) VPin 2Vth(M)to Vth(M)to Ð   (Vth(M)+ 1.0) (Vth(M)+ 1.5) Multiplier Gain (VPin 3= 0.5 V, VPin 2= Vth(M)+ 1.0 V) (Note 4) K 0.43 0.65 0.87 1/V ZERO CURRENT DETECTOR Input Threshold Voltage (VinIncreasing) Vth1.33 1.6 V 1.87 Hysteresis (VinDecreasing) VH100 200 300 mV Input Clamp Voltage V High State (IDET V= + 3.0 mA)IH6.1 6.7 Ð Low State (IDET= ± 3.0 mA) VIL0.3 0.7 1.0 http://onsemi.com 2
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