Characterization of electrical and optical properties of silicon based materials [Elektronische Ressource] / vorgelegt von Guobin Jia

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• Publié par: brandenburgische_technische_universitat_cottbus
• Publié le: 01 janvier 2009
• Nombre de lectures: 29
• Langue: English
• Poids de l'ouvrage: 6 Mo

Extrait

Characterization of electrical and optical
properties of silicon based materials


Von der Fakultät für Mathematik, Naturwissenschaften und Informatik
der Brandenburgischen Technischen Universität Cottbus

zur Erlangung des akademischen Grades
Doktor der Naturwissenschaften
(Dr. rer. nat.)

genehmigte Dissertation

vorgelegt von

Diplom-Physiker

Guobin Jia


geboren am 15. Juli 1971 in Lushan (Henan), V. R. China


Gutachter: Prof. Dr. rer. nat. habil. Jürgen Reif
Gutachter: Prof. Dr. sc. nat. Martin Kittler
Gutachter: Privatdoz. Dr. rer. nat. habil. Hartmut S. Leipner



Tag der mündlichen Prüfung: 04.12.2009 Index
Abstract................................................................................................................................................1

Chapter 1. Advanced silicon technology and materials research ........................................................4
1.1 Photovoltaics .............................................................................................................................5
1.2 Microelectronics ........................................................................................................................9
1.3 Development in opto-electronics.............................................................................................12

Chapter 2. Characterization by semiconductor spectroscopy and microscopy .................................17
2.1 Defects in silicon .....................................................................................................................17
2.2 Semiconductor spectroscopy and microscopy.........................................................................22
Chapter 3. Experimental methods......................................................................................................25
3.1 Interaction between electron beam and semiconductor materials ...........................................25
3.1.1 Electron beam induced current .........................................................................................27
3.1.2 Cathodoluminescence.......................................................................................................31
3.2 Photoluminescence ..................................................................................................................34
3.3 Electroluminescence................................................................................................................35

Chapter 4. Recombination processes in silicon .................................................................................38
4.1 Radiative BB recombination ...................................................................................................39
4.2 Shockley-Read-Hall recombination ........................................................................................40
4.3 Auger recombination ...............................................................................................................42
4.4 Surface recombination.............................................................................................................43
4.5 Estimation of the BB recombination efficiency in the bulk ....................................................44
4.6 Recombination at dislocations.................................................................................................46
4.6.1 EBIC C(T) dependences of dislocations...........................................................................46
4.6.2 Radiative recombination at dislocations...........................................................................49

Chapter 5. Electrical and optical properties of crystalline Si materials for PV applications.............52
5.1 Overview of crystalline silicon solar cell materials.................................................................52
5.2 Electrical and optical properties of block cast Si ....................................................................55
5.2.1 Sample preparation ...........................................................................................................55
5.2.2 Electrical properties of dislocations..................................................................................55
5.2.3 Impact of solar cell processing on electrical properties of GBs and bulk material ..........61
5.2.4 The impact of different solar cell processing ...................................................................65
5.2.5 Luminescence of block cast Si .........................................................................................70
5.3 Thin films ................................................................................................................................75
5.3.1 Sample description............................................................................................................75
5.3.2 EBIC energy dependent collection efficiency η(E)..........................................................79
5.3.3 PL measurements..............................................................................................................83
5.4 Summary..................................................................................................................................86

Chapter 6. Investigations of microelectronics material .....................................................................89
6.1 Diffusion length determination in SOI via EBIC method .......................................................89
6.1.1 EBIC technique for diffusion length determination .........................................................89
6.1.2 Experimental setup for SOI layer .....................................................................................91
6.1.3 Sample preparation ...........................................................................................................92
6.1.4 Effect of single bias on surface recombination at the BOX .............................................94
i 6.1.5 Double bias for full suppression of the surface recombination ........................................95
6.1.6 Interference of PL signal: determination of the layer thickness.......................................97
6.2 Electrical properties of dislocation networks fabricated by silicon wafer direct bonding ......99
6.2.1 Electrical inhomogeneity in n-type sample ....................................................................100
6.2.2 Barrier at the bonding interface: LBIC measurements...................................................104
6.2.3 Energy dependent collection efficiencies .......................................................................105
6.2.4 Electrical inhomogeneity in p-type substrate samples....................................................106
6.2.5 Explanation of the EBIC contrast behaviors ..................................................................107
6.3 Summary................................................................................................................................110

Chapter 7. Luminescence properties of silicon nanostructures .......................................................112
7.1 Luminescence properties from Si NWs produced by evaporation of SiO ............................113
7.1.1 Sample description..........................................................................................................113
7.1.2 CL measurements ...........................................................................................................113
7.1.3 PL measurements............................................................................................................116
7.2 Luminescence properties of silicon nano rods at sub-bandgap region..................................117
7.2.1 PL measurements in vacuum and gas ambients: Emission from the surface .................118
7.2.2 PL measurements with the samples immersed in HF and H SO ..................................121 2 4
7.3 Luminescence properties of porous silicon at sub-bandgap IR region..................................123
7.3.1 The fabrication of porous silicon....................................................................................123
7.3.2 PL measurements in different media ..............................................................................124
7.3.3 PL measurements with the samples immersed in H O ..................................................125 2 2
7.3.4 EL measurements on diodes made from porous silicon .................................................127
7.4 Recombination mechanism via Si/Si oxide interface states ..................................................129
7.5 Optical properties of MQWs at sub-bandgap IR region........................................................133
7.6 Discussion..............................................................................................................................135
7.7 Summary................................................................................................................................137

Acknowledgements..........................................................................................................................138