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Description
Informations
Publié par | technische_universitat_chemnitz |
Publié le | 01 janvier 2006 |
Nombre de lectures | 35 |
Langue | English |
Poids de l'ouvrage | 20 Mo |
Extrait
Power cycling capability
of advanced packaging and interconnection
technologies at high temperature swings
By the faculty of Electrical Engineering and Information Technology at Chemnitz
university of Technology
approved
Dissertation
In fulfilment of the requirements for the degree
Doktor-Ingenieur (Dr.-Ing.)
submitted by
Dipl.-Ing. Raed Amro
Born in 04.03.1969 in Dura-Hebron/ Palestine
Date of submission: 24.04.2006
Examiners: Prof. Dr.- Ing. Josef Lutz
Prof. Dr.- Ing. Andreas Lindemann
Dr. Reinhold Bayerer
Date of defence: 21.07.2006
Lastwechselfestigkeit von modernen Aufbau- und
Verbindungstechniken bei hohen Temperaturhüben
von der Fakultät für Elektrotechnik und Informationstechnik der Technischen
Universität Chemnitz
genehmigte
Dissertation
zur Erlangung des akademischen Grades
Doktor-Ingenieur (Dr.-Ing.)
Vorgelegt von
Dipl. Ing. Raed Amro
geboren am 04.03.1969 in Dura-Hebron/Palästina
eingereicht am: 24.04.2006
Gutachter: Prof. Dr.- Ing. Josef Lutz
Prof. Dr.- Ing. Andreas Lindemann
Dr. Reinhold Bayerer
Tag der Verleihung: 21.07.2006
Acknowledgement
This work accrued during my employment as a scientific co-worker at the chair of Power
Electronics and Electromagnetic Compatibility (PE/EMC) at Chemnitz university of
technology/Germany.
My special thanks go to Prof. Dr.-Ing. Josef Lutz for his support and professional suggestions
which made this work possible. Further thanks are due to Prof. Dr.-Ing. Andreas Lindemann
and Dr. Reinhold Bayerer for the valuable discussions and their role as joint examiners.
I also thank:
All my colleagues at the chair PE/EMC for their support and the good working atmosphere.
The students who supported me with their works.
Mrs. Iris Höbelt from center of microtechnologies at Chemnitz university of technology for
the scanning electron microscopy.
Prof. Dr. Roland Sittig, Dr.-Ing. Jacek Rudzki from Technical University at Braunschweig
and Dr.-Ing. Markus Thoben from Infineon Technologies AG/Warstein for their precious
cooperation in the reliability investigation of the Low Temperature Joining Technique.
Dr. Uwe Scheuermann from Semikron International and Dr. Max H. Poech from Fraunhofer
Institute for Silicon Technology ISIT for the valuable discussions and tips.
My wife Maysa and son Aziz for support and patience.
And last but not least, my parents for being there.
Chemnitz, July 2006
Dedicated to my father who passed away three weeks before my defence i
Contents
1 Einleitung .......................................................................................................................... 1
2 Kurzfassung ...................................................................................................................... 3
3 Motivation........... 5
4 Thermal analysis in power electronics ........................................................................... 7
4.1 Theory of heat transfer ................................................................................................7
4.2 Mechanisms of heat transfer ....................................................................................... 8
4.3 Analogy between thermal and electrical systems ....................................................... 9
4.4 Thermal networks...................................................................................................... 10
4.4.1 Types of thermal networks................................................................................. 10
4.4.2 Transformation of ‘Foster’ network into ‘Cauer’ network ................................ 12
4.4.3 Simulation of thermal behaviour of power devices using Cauer network ......... 12
5 Packaging and interconnection technologies in power electronics............................ 16
5.1 Packaging concepts of power components.................................................................. 16
5.1.1 Discrete power devices....................................................................................... 17
5.1.1.1 TO-family.................................................................................................... 17
5.1.1.2 DCB based, transfer molded devices .......................................................... 18
5.1.1.3 Hockey puck packages................................................................................ 19
5.1.2 Power modules ................................................................................................... 19
5. 2 Advancements in standard power modules............................................................. 20
5.2.1 ECONOPACK family......................................................................................... 20
5.2.2 Pressure contacted modules ............................................................................... 22
5.2.3 Intelligent power modules (IPM) ....................................................................... 23 ii
5.3 Interconnection technologies in power electronics ................................................... 23
5.3.1 Wire bonding technology................................................................................... 23
5.3.2 Soft solders......................................................................................................... 25
5.4 Advancements in the interconnection technologies................................................. 25
5.4.1 Advancements in wire bonding techniques........................................................ 25
5.4.2 Advancements in soldering and joining techniques........................................... 27
5.5 Low temperature joining technique (LTJT).............................................................. 28
5.5.1 Principle and performances of the LTJT............................................................ 28
5.5.2 Joining procedure of the LTJT........................................................................... 29
5.5.2.1 Powder application...................................................................................... 29
5.5.2.2 Joining process ............................................................................................ 30
6 Failure mechanisms in power devices ......................................................................... 33
6.1 Failure mechanisms of bond wires............................................................................ 33
6.2 Reconstruction of the Al metallization...................................................................... 38
6.3 Electromigration........................................................................................................ 39
6.4 Solder-joints degradation .......................................................................................... 41
6.5 Electrical and mechanical aging of DCB .................................................................. 43
6.6 Die fracture................................................................................................................ 45
7 Reliability prediction in power electronics 46
7.1 Lifetime prediction using accelerated aging tests ..................................................... 46
7.1.1 Temperature cycling tests................................................................................... 46
7.1.2 Power cycling tests............................................................................................. 47
7.1.2.1 Impact of test parameters on N .................................................................. 48 f
7.1.2.2 Extrapolation of life-time models based on results of power cycling tests. 50
7.1.2.3 Statistical analysis of the reliability test results ......................................... 51
iii
7.2 Failure analysis techniques........................................................................................ 53
7.3 Power cycling reliability of standard power modules (LESIT project) .................... 55
8 Thermal measurements in power electronics .............................................................. 59
8.1 Methods of measuring T ........................................................................................... 59 j
8.2 R measuring set-up.................................