Study of the deep levels induced by the high energy proton and neutron irradiation in the structures of high resistivity Si, SiC and GaN ; Didelės energijos protonais ir neutronais sukurtų giliųjų centrų tyrimas didžiavaržio Si, SiC ir GaN dariniuose

Lab711

Description

VILNIUS UNIVERSITY SEMICONDUCTOR PHYSICS INSTITUTE Vidmantas Kalendra STUDY OF THE DEEP LEVELS INDUCED BY THE HIGH ENERGY PROTON AND NEUTRON IRRADIATION IN THE STRUCTURES OF HIGH RESISTIVITY Si, SiC AND GaN Summary of doctoral thesis Physical science, Physics (02P), Semiconductor Physics (P 265) Vilnius, 2009 The thesis has been prepared in the period from 2005 to 2009 at the Semiconductor Department and Institute of Applied Research, Vilnius University Scientific Supervisor: Prof. Habil. Dr. Vaidotas Kažukauskas (Vilnius University, Physical Sciences, Physics – P02, Semiconductor physics – P265) Consultant: Prof., corresponding member of the Lithuanian Academy of Sciences Juozas Vidmantis Vaitkus (Vilnius University, Physical Sciences, Physics – P02, Semiconductor physics – P265) The thesis will be defended at the Council of Physical Science: Chairman Prof. Habil. Dr. Gintautas Tamulaitis (Vilnius University, Physical Sciences, Physics – 02, Semiconductor physics – P265) Members: Dr. Karolis Kazlauskas (Vilnius University, Physical Sciences, Physics – 02, Semiconductor physics – P265) Prof. Habil. Dr. Eugenijus Šatkovskis (Vilnius Gediminas Technical University, Physical Sciences, Physics – 02, Semiconductor physics – P265) Prof. Habil. Dr. Rimantas Vaišnoras (Vilnius Pedagogical University, Physical Sciences, Physics – 02, Condensed matter – P260) Doc. Dr.

Sujets

• Defect
• Gan
• Physics
• Si
• Sic

Informations

• Publié par: vilnius_university
• Publié le: 01 janvier 2009
• Nombre de lectures: 39
• Langue: English

Extrait

 

 

VILNIUS UNIVERSITY SEMICONDUCTOR PHYSICS INSTITUTE         Vidmantas Kalendra         STUDY OF THE DEEP LEVELS INDUCED BY THE HIGH ENERGY PROTON AND NEUTRON IRRADIATION IN THE STRUCTURES OF HIGH RESISTIVITY Si, SiC AND GaN         Summary of doctoral thesis Physical science, Physics (02P), Semiconductor Physics (P 265)

            Vilnius, 2009

The thesis has been prepared in the period from 2005 to 2009 at the Semiconductor Department and Institute of Applied Research, Vilnius University   Scientific Supervisor: Prof. Habil. Dr. Vaidotas Kaukauskas (Vilnius University, Physical Sciences, Physics  P02, Semiconductor physics  P265)   Consultant:  Prof., corresponding member of the Lithuanian Academy of Sciences Juozas Vidmantis Vaitkus (Vilnius University, Physical Sciences, Physics  P02, Semiconductor physics  P265)   The thesis will be defended at the Council of Physical Science:   Chairman  Prof. Habil. Dr. Gintautas Tamulaitis (Vilnius University, Physical Sciences, Physics  02, Semiconductor physics  P265)   Members:  Dr. Karolis Kazlauskas (Vilnius University, Physical Sciences, Physics  02, Semiconductor physics  P265)   Prof. Habil. Dr. Eugenijus atkovskis (Vilnius Gediminas Technical University, Physical Sciences, Physics  02, Semiconductor physics  P265)   Prof. Habil. Dr. Rimantas Vainoras (Vilnius Pedagogical University, Physical Sciences, Physics  02, Condensed matter  P260)   Doc. Dr. Bonifacas Vengalis (Semiconductor Physics Institute, Physical Sciences, Physics  02, Semiconductor physics  P265)   Opponents:  Prof. Habil. Dr. Edmundas Kuoktis (Vilnius University, Physical Sciences, Physics  02, Semiconductor physics  P265)   Prof. Habil. Dr. Sigitas Tamulevičius (Kaunas University of Technology, Physical Sciences, Physics  02, Condensed matter  P260)   The defence of the thesis will take place at the public meeting of the Council of Physical Science at 3 p.m. on December 4, 2009 at the Faculty of Physics of Vilnius University, room 212. Adress: Saulėtekio av. 9/3, LT-10222, Vilnius, Lithuania.   Summary of the thesis has been send out on November , 2009. The thesis is available at the libraries of Vilnius University and Semiconductor Physics Institute.