Time-dependent Kondo model with a factorized initial state [Elektronische Ressource] / von Dmitry Lobaskin
111 pages
English

Time-dependent Kondo model with a factorized initial state [Elektronische Ressource] / von Dmitry Lobaskin

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111 pages
English
Le téléchargement nécessite un accès à la bibliothèque YouScribe
Tout savoir sur nos offres

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Publié par
Publié le 01 janvier 2006
Nombre de lectures 29
Langue English
Poids de l'ouvrage 1 Mo

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49
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Estimations
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.
17
.
2.1
.
Equilibrium
.
K
34
ondo
Spin-spin
Problem
F
.
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.
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36
.
Conclusion
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.
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17
.
2.2
.
Timedep
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enden
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t
.
K
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44
Hamiltonian
NonEquilib
.
K
.
Mo
.
in
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K
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Limit
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Motiv
45
1.2
Flo
.
Equation
.
h
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4.1
.
w
.

.
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.
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.
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21
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3.
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Non-Equilib
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Mo
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at
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p
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.
Intro
.
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.
CONTENTS
.
i
4.3
Contents
Results
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
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.
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.
.
.
53
.
Analytical
.
of
.
Asymptotics
.
.
.
.
.
.
31
.
3.2
.
Magnetization
.
.
54
.
Conclusion
.
.
.
.
.
.
.
.
.
.
27
.
3.1
.
Diagonalization
.
of
.
the
.
Eectiv
.
e
.
Hamiltonian
.
.
.
.
.
.
59
.. . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
in
5.5
.
Conclusion
.
.
.
.
Mo
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.
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.
.
.
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.
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Limit
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of
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T
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.
.
.
.
.
rem
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.
.
.
.
85
.
.
.
66
.
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.
.
endix
.

.
t
.
.
.
.
.
.
.
61
.
.
75
wledgements
6.
Fluctuation-Dissipation
Quasipa
Equilib
rticle
of
Sp
.
ectral
.
F
.

.
.
.
.
Summa
.
.
.
.
.
K
.
.
.
.
.
.
.
.
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.
.
87
.
A.
.
r
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.
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P
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64
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Publications
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.
.
.
.
79
.
6.1
FDT
Nonequilibrium
.
Sp
.
ectral
.
Densit
A
y
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.
.
61
.
K
.
the
.
Fluctuation-Dissipation
74
5.
ii
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.
.
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.
.
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.
.
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.
.
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.
7.
.
ry
79
.
6.2
.
Results
.
of
.
the
ondo
F
5.4
ermi
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Liquid
.
Theory
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.
.
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.
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.
App
.
93
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Details
.
nonregula
.
sum
.
.
.
.
.
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.
.
81
oin
6.3
oulouse
Buildup
5.3
of
.
the
95
K
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ondo
.
Resonance
.
.
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.
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Nonequilibrium
.
Violation
.
5.2
.
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.
105
.

.
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.
82
.
6.4
Theorem
Conclusion
5.1
.
del
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ondo
.
rium
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Non-
.
in
.
Theo
.
the
.
Violation
.
Contents
.
.
.
107
.this
1
y
1.
other
INTRODUCTION

1.1
quan
NonEquilib
e
rium
temp
K
are
ondo
three
Eect
des
Since

early

1970s,

the
ariet


electronic
on
industry
wide
has

b
observ
een
ab
rapidly
ro
progressing
in
fol-

lo
of
wing
erturba-
the
far
Mo
a
ore's
o
La
single-
w

to
up
double
v
pro
t

main
p
Unlik
o
on
w
tunnel
er
w
ev
y
ery
thic
18
10
mon
the
ths.
insulator,
F
energy
or
w
man
tial
y
these
y
pro
ears
en
this
that
has
driv
b
sizes
een
op
satised
rise
largely
quan
b
is
y
on
scaling
and

single-w
to
nanotub
ev
a
en
of
smaller
They
dimensions.

Extrap
making
olating
o
the
able
Mo

ore's
in
la

w
are
in
in
to
phenomenon:
the
This
next
when
10-15
metallic
y
separated
ears,
insulating
it
1
b
-
ecomes
ords,
apparen
in
t
Electrons
that
ermi
the
through
scaling
en
will
terms
run
ould
in
o
to
o
ph
p
ysical
Due
limits:
sizes
limits
all
of
quan
material
start
used,
role.
but
external
also

fundamen
the
tal
ma
limits
SET
arising
equilibrium.
from
lo
the

la

ws
giv
of
wide
quan
of
tum
man



y
whic
electronics
h

b
es
ecome


These
imp
alled
ortan
on
t
es
at

v
rolled
ery
sheet
small

length
atoms.
scales.
ha
Of
e


the
transistor
ultimate
it
goal
w
then
nanometers
is
and
to
to

tain
a
t
functional
nanometers

length.

e
of
transistors,
transp

orting
based
a
an

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