DB3 DB4 DC34

Sgs-Thomson Microelectronics

Description

Niveau: Secondaire, Lycée, Terminale
DB3 /DB4 / DC34? April 1995 TRIGGER DIODES DO 35 (Glass) VBO : 32V / 34V / 40V VERSIONS LOW BREAKOVER CURRENT FEATURES Symbol Parameter Value Unit Rth (j-a) Junction to ambient 400 °C/W Rth (j-l) Junction-leads 150 °C/W High reliability glass passivation insuring parameter stability and protection against junction contamination. DESCRIPTION Symbol Parameter Value Unit P Power dissipation on printed circuit (L = 10 mm) Ta = 65 °C 150 mW ITRM Repetitive peak on-state current tp = 20 µs F= 100 Hz 2 A Tstg Tj Storage and operating junction temperature range - 40 to + 125 - 40 to + 125 °C °C ABSOLUTE RATINGS (limiting values) THERMAL RESISTANCES 1/4

• netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united


• current voltage characteristics


• protection against junction

Sujets

• Première
• Kingdom

Informations

• Publié par: profil-zyan-2012
• Nombre de lectures: 17

Extrait

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FEATURES V BO : 32V / 34V / 40V VERSIONS LOW BREAKOVER CURRENT

DESCRIPTION High reliability glass passivatio ninsu ring parame tersta bilitya ndp ro tectiona ga in st junction contaminatio n.

ABSOLUTE RATINGS(limiting values)

Symbol

Parameter

P Powerdissipation on printed circuit (L = 10 mm)

DB3 /DB4 / DC34

Ta = 65°C

I TRM Repetitive peak on-state current tp= 20ms F= 100 Hz Tstg Storageand operating junction temperature range Tj

THERMAL RESISTANCES

Symbol

R th (j-a) Junction toa mbient

R th (j-l) Junction-leads

April 1995

Parameter

TRIGGER DIODES

DO 35 (Glass)

Value

150

2

Unit

mW

A

- 40 to+ 125°C - 40 to+ 125°C

Value

400

150

Unit

°C/W

°C/W

1/4