IRL2505 HEXFET® Power MOSFET

Description

Niveau: Secondaire, Lycée, Terminale
IRL2505 HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 is universally preferred for all commercial- Industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Description VDSS = 55V RDS(on) = 0.008? ID = 104A S D G Logic-Level Gate Drive TO-220AB Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 104 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 74 A IDM Pulsed Drain Current 360 PD @TC = 25°C Power Dissipation 200 W Linear Derating Factor 1.3 W/°C VGS Gate-to-Source Voltage ± 16 V EAS Single Pulse Avalanche Energy 500 mJ IAR Avalanche Current 54 A EAR Repetitive Avalanche Energy 20 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and 55 to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case )

• tj ≤


• source current


• body diode


• junction temperature


• typical output


• current based


• maximum effective


• absolute maximum

Sujets

• Première
• Waveform
• Intrinsic and extrinsic properties
• Junction temperature

Informations

• Publié par: profil-zyan-2012
• Nombre de lectures: 31
• Langue: English

Extrait

G

PD - 91325C
IRL2505
HEXFET
®
Power MOSFET
D
V
DSS
= 55V
R
DS(on)
= 0.008

I
D
= 104A
U
S

Logic-Level Gate Drive
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier utilize
oand-vraensicsetad npcroe cpeesr ssiinligc toenc ahrneiaq.u

Tesh itso baecnhieefivt,e c eoxmtrbeinmeedly wloitwh
tHheE fXaFstE sTw Pitocwhienr gM spOeSeFdE aTnsd a rrueg wgeeldl ikzneodw dne fvoirc, ep rdoevsiidgens t thhaet
designer with an extremely efficient and reliable device for
use in a wide variety of applications.
ITnhdeu sTtrOi-al2 2a0p ipsl icuantiivoenrss alalty pproewfeerrr eddi sfsoirp aaltli ocno mlemveelrsc iatlo-
approximately 50 watts. The low thermal resistance and
low package cost of the TO-220 contribute to its wide
TO-220AB
acceptance throughout the industry.
Absolute Maximum Ratings
ParameterMax.
I
D
@ T
C
= 25°CContinuous Drain Current, V
GS
@ 10V104
U
I
D
@ T
C
= 100°CContinuous Drain Current, V
GS
@ 10V74
I
DM
Pulsed Drain Current
Q
360
P
D
@T
C
= 25°CPower Dissipation200
Linear Derating Factor1.3
V
GS
Gate-to-Source Voltage ± 16
E
AS
Single Pulse Avalanche Energy500
I
AR
Avalanche Current
Q
54
E
AR
Repetitive Avalanche Energy
Q
20
dv/dtPeak Diode Recovery dv/dt
S
5.0
T
J
Operating Junction and55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbfin (1.1Nm)
Thermal Resistance
ParameterTyp.Max.
R

JC
Junction-to-Case0.75
R

CS
Case-to-Sink, Flat, Greased Surface0.50
R

JA
Juction-to-Ambient 62
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RstinUAWC°/WVJmAJmsn/VC°stinU/C°W111/19/01

IRL2505
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
ParameterMin.Typ.Max.Units

Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage55VV
GS
= 0V, I
D
= 250µA

V
(BR)DSS
/

T
J
Breakdown Voltage Temp. Coefficient 0.035V/°CReference to 25°C, I
D
= 1mA
0.008V
GS
= 10V, I
D
= 54A
T
R
DS(on)
Static Drain-to-Source On-Resistance 0.010

V
GS
= 5.0V, I
D
= 54A
T
0.013V
GS
= 4.0V, I
D
= 45A
T
V
GS(th)
Gate Threshold Voltage1.02.0VV
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance59SV
DS
= 25V, I
D
= 54A
25V
DS
= 55V, V
GS
= 0V
I
DSS
Drain-to-Source Leakage Current250µAV
DS
= 44V, V
GS
= 0V, T
J
= 150°C
I
GSS
Gate-to-Source Forward Leakage100nAV
GS
= 16V
Gate-to-Source Reverse Leakage-100V
GS
= -16V
Q
g
Total Gate Charge130I
D
= 54A
Q
gs
Gate-to-Source Charge25nCV
DS
= 44V
Q
gd
Gate-to-Drain ("Miller") Charge67V
GS
= 5.0V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time12V
DD
= 28V
t
r
Rise Time160I
D
= 54A
t
d(off)
Turn-Off Delay Time43nsR
G
= 1.3

V
GS
= 5.0V
t
f
Fall Time84R
D
= 0.50

See Fig. 10
T
L
S
Internal Source Inductance7.5nHaBnedt wceeennt elr eoafd ,die contact
C
iss
Input Capacitance5000V
GS
= 0V
C
oss
Output Capacitance1100pFV
DS
= 25V
C
rss
Reverse Transfer Capacitance390 = 1.0MHz, See Fig. 5

TSource-Drain Ratings and Characteristics
ParameterMin.Typ.Max.Units

Conditions
I
S
Continuous Source Current 104
U
MOSFET symbol
D
(Body Diode)Ashowing the
I
SM
Pulsed Source Current360integral reverse
G
(Body Diode)
Q
p-n junction diode.
S
V
SD
Diode Forward Voltage1.3VT
J
= 25°C, I
S
= 54A, V
GS
= 0V
T
t
rr
Reverse Recovery Time140210nsT
J
= 25°C, I
F
= 54A
Q
rr
Reverse Recovery Charge650970nCdi/dt = 100A/µs

T
t
on
Forward Turn-On TimeIntrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)

Notes:
Q
Repetitive rating; pulse width limited by
T
Pulse width

300µs; duty cycle

2%.
max. junction temperature. ( See fig. 11 )
U
Calculated continuous current based on maximum allowable

R
VR
DD
== 2255

V, ,I sta=r ti5n4gA .T
J
(

S= e2e5 F°iCg, uLr e= 1 22)40µH junction temperature;for recommended current-handling of the
SA GS
I
SD

54A, di/dt

230A/µs, V
DD

V
(BR)DSS
, package refer to Design Tip # 93-4
T
J

175°C

2

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0001 VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
001

01V5.2 20µs PULSE WIDTH
1
T
J
= 25°C
A
0.1110100
V
D

S
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics

0001T
J
= 25°C
100
T
J
= 175°C

01 2V0
D
µ
S
s= P 2U5LVSE WIDTH
12.53.54.55.56.57.5
A
V
G

S
, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
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0001 VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
001

IRL2505

10
2.5V
2T 0
J
µ=s 1P7U5°LCSE WIDTH
10.1110100
A
V
D

S
, Drain-to-Source Voltage (V)
Fig 2.
Typical Output Characteristics

2.5
I
D
=9

0A
.205.1

0.15.0V
GS

=5V
0.0-60-40-20020406080100120140160180
T
J
, Junction Temperature(
°
C)
Fig 4.
Normalized On-Resistance
Vs. Temperature
3

IRL2505

00001V = 0V, f = 1MHz
SGC =C +C ,C SHORTED
iss




gs




gd



ds
C = C
rss


gd
C =C + C
0008oss



ds


gd
Cssi0006

4000
C
oss

2000
C
r

ss
0110100
A
V
D

S
, Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage

0100

100
T
J
= 175°C
T
J
= 25°C

4

10
V
G

S
= 0V
A
0.40.81.21.62.02.42.8
V
S

D
, Source-to-Drain Voltage (V)

Fig 7.
Typical Source-Drain Diode
Forward Voltage

51I = 54A
D V = 44V
SD V = 28V
SD219

6

3 F OSRE ET EFISGTU CRIER C13UIT
0A04080120160200
Q
G
, Total Gate Charge (nC)
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage

1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)

001

01

sµ01sµ001sm1sm01 T
C
= 25°C
T
J
= 175°C
1
Single Pulse
A
110100
V
D

S
, Drain-to-Source Voltage (V)

Fig 8.
Maximum Safe Operating Area
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LIMITED BY

PACKAGE

021001080604020255075100125150175
T
C
, Case Temperature( ° C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
1

D = 0.50

IRL2505

V
GS
D.U.T.
RG+VDD-V0.5DPuutlsy eF aWcitdotrh

µ

s
Fig 10a.
Switching Time Test Circuit
VSD%09%01VSGt
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms

02.00.10.10
0.05P
DM
0.02t
1

0.01(THESRINMGALLE RP

EUSLPSOENSE)t
2
Notes:
1. Duty factor D =t
1
/ t

2
0.012. Peak T
J
=P
DM
x Z
thJC
+ T
C
0.000010.00010.0010.010.1 1
t
1
, Rectangular Pulse Duration