IRL3103S L HEXFET® Power MOSFET

Description

Niveau: Secondaire, Lycée, Terminale
IRL3103S/L HEXFET® Power MOSFET PD - 91338F l Advanced Process Technology l Surface Mount (IRL3103S) l Low-profile through-hole (IRL3103L) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Parameter Typ. Max. Units R?JC Junction-to-Case ––– 1.4 R?JA Junction-to-Ambient ( PCB Mounted,steady-state)** ––– 40 Thermal Resistance °C/W Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V? 64 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V? 45 A IDM Pulsed Drain Current ?? 220 PD @TA = 25°C Power Dissipation 3.8 W PD @TC = 25°C Power Dissipation 110 W Linear Derating Factor 0.71 W/°C VGS Gate-to-Source Voltage ±16 V EAS Single Pulse Avalanche Energy?? 240 mJ IAR Avalanche Current? 34 A EAR Repetitive Avalanche Energy? 11 mJ dv/dt Peak Diode Recovery dv/dt ?? 5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Absolute Maximum Ratings Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

• electrical characteristics


• tj ≤


• source current


• °c power


• current ??


• typical output


• characteristics


• µs

Sujets

• Première
• Waveform
• Intrinsic and extrinsic properties
• Characteristic

Informations

• Publié par: profil-zyan-2012
• Nombre de lectures: 44
• Langue: English

Extrait

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Logic-Level Gate Drive
Advanced Process Technology
Surface Mount (IRL3103S)
Low-profile through-hole (IRL3103L)
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRL3103L) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°CContinuous Drain Current, V
GS
@ 10V
U
I
D
@ T
C
= 100°CContinuous Drain Current, V
GS
@ 10V
U
I
DM
Pulsed Drain Current
QU
P
D
@T
A
= 25°CPower Dissipation
P
D
@T
C
= 25°CPower Dissipation
Linear Derating Factor
V
GS
Gate-to-Source Voltage
E
AS
Single Pulse Avalanche Energy
I
AR
Avalanche Current
Q
E
AR
Repetitive Avalanche Energy
Q
dv/dtPeak Diode Recovery dv/dt
SU
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
R
q
JC
Junction-to-Case
R
q
JA
Junction-to-Ambient ( PCB Mounted,steady-state)**

URPD - 91338F
IRL3103S/L
HEXFET
®
Power MOSFET
D
V
DSS
= 30V
R
DS(on)
= 0.014
W
I
D
= 64A
S

2TO-262
D Pak

.xaM46540228.301117.061± 04243110.5-55 to + 175
300 (1.6mm from case )
Typ.Max.
1.4
04

stinUAWWC°/WVJmAJmsn/VC°stinUW/C°

IRL3103S/L

UElectrical Characteristics @ T
J
= 25°C (unless otherwise specified)
ParameterMin.Typ.Max.Units

Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage30V
GS
V = 0V, I
D
= 250µA
D
V
(BR)DSS
/
D
T
J
Breakdown Voltage Temp. Coefficient0.037V/°CReference to 25°C
D
,

I= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance0.014
W
GS
V = 10V, I
D
= 34A
T
0.019V
GS
= 4.5V, I
D
= 28A
T
V
GS(th)
Gate Threshold Voltage1.0V
D
V
S
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance23S
DS
V = 25V, I
D
= 34A
U
25V
DS
= 30V, V
GS
= 0V
I
DSS
Drain-to-Source Leakage Current250µA
DS
V = 24V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage100
GS
V = 16V
I
GSS
Gate-to-Source Reverse Leakage-100nAV
GS
= -16V
Q
g
Total Gate Charge50
D
I= 34A
Q
gs
Gate-to-Source Charge14nC
DS
V = 24V
Q
gd
Gate-to-Drain ("Miller") Charge28
GS
V = 4.5V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time9.0
DD
V = 15V
t
r
Rise Time210
D
I= 34A
t
d(off)
Turn-Off Delay Time20ns
G
R= 3.4
W
t
f
Fall Time54
D
R= 0.43
W∃
See Fig. 10
T
L
S
Internal Source Inductance7.5nHBetween lead,
and center of die contact
C
iss
Input Capacitance1600
GS
V = 0V
C
oss
Output Capacitance640pF
DS
V = 25V
C
rss
Reverse Transfer Capacitance320 = 1.0MHz, See Fig
U
. 5

UUTSource-Drain Ratings and Characteristics
ParameterMin.Typ.Max.Units

Conditions
I
S
Continuous Source Current64MOSFET symbol
D
(Body Diode)Ashowing the
I
SM
Pulsed Source Current220integral reverse
G
(Body Diode)
Q
p-n junction diode.
S
V
SD
Diode Forward Voltage1.3V
J
T= 25°C, I
S
= 34A, V
GS
= 0V
T
t
rr
Reverse Recovery Time81120ns
J
T = 25°C, I
F
= 34A
Q
rr
Reverse Recovery Charge210310µCdi/dt = 100A/µ

s
TU
t
on
Forward Turn-On TimeIntrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)

SNotes:
Q
Repetitive rating; pulse width limited by
I
SD
£
34A, di/dt
£
140A/µs, V
DD
£
V
(BR)DSS
,
max. junction temperature. ( See fig. 11 )
R

V
DD
= 15V, starting T
J
= 25°C, L = 300µH
T


TP
J
u
£
ls 1e 7w5i°dCth
£
300µs; duty cycle
£
2%.
R
G
= 25
W
, I
AS
= 34A. (See Figure 12)
U

Uses IRL3103 data and test conditions.
* * FWorh eren cmoomumnteendd eodn f1o" ostpqruinatr ea nPdC sB o(l dFeRri-n4 go tr eGch-1ni0q uMeast erreifael r) .to application note #AN-994.

0001 VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
001

01

V5.2 20µs PULSE WIDTH
1
T
J
= 25°C
A0.1110100
V
D

S
, Drain-to-Source Voltage (V)

Fig 1.
Typical Output Characteristics

0001

010

01

T
J
= 25°C
T
J
= 175°C

V
D

S
= 15V
1
20µs PULSE WIDTH
2.03.04.05.06.07.08.09.0
A
V
G

S
, Gate-to-Source Voltage (V)

Fig 3.
Typical Transfer Characteristics

0001 VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
001

01

IRL3103S/L

V5.2 2T 0J µ=s 1P7U5°LCSE WIDTH
10.1110100
A
V
D

S
, Drain-to-Source Voltage (V)

Fig 2.
Typical Output Characteristics

0.2 I = 56A
D

5.1

0.1

5.0

0.0
V
G

S
= 10V
A-60-40-20020406080100120140160180
T
J
, Junction Temperature (°C)

Fig 4.
Normalized On-Resistance
Vs. Temperature

IRL3103S/L

0023V = 0V, f = 1MHz
SGC =C +C ,C SHORTED
iss




gs




gd



ds
0082C = C
rss


gd
C =C + C
oss



ds


gd
Cssi00420002 Csso00610021 Cssr0080040011V , Drain-to-Source Voltage (V)
SDFig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage

0001

A001

001T
J
= 175°C
T
J
= 25°C
10
V
G

S
= 0V
A
0.40.81.21.62.02.42.8
V
S

D
, Source-to-Drain Voltage (V)

Fig 7.
Typical Source-Drain Diode
Forward Voltage

15
I
D
= 34A
21

9

6

V = 24V
SD V = 15V
SD

3 FOR TEST CIRCUIT
0
SEE FIGURE 13
A
010203040506070
Q
G
, Total Gate Charge (nC)
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage

001

0010 OPERATION IN THIS AREA LIMITED
BY R
DS(on)
sµ01sµ001sm101sm01 T
C
= 25°C
T
J
= 175°C
1
Single Pulse
A
110100
V
D

S
, Drain-to-Source Voltage (V)

Fig 8.
Maximum Safe Operating Area

070605040302010255075100125150175
T
C
, Case Temperature( ° C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
01

1D = 0.50
02.001.00.10.05
00..0021

0.00.100001

(THSEIRNMGALLE RPEUSLPSOENSE)

IRL3103S/L

RDVSDVGS
D.U.T.
RG+VDD-V5.4DPuutlsy eF aWcitdotrh
££ 01& 1
µ

s
%
Fig 10a.
Switching Time Test Circuit
VSD%09

%01VSGt
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms

PMDt1t2Notes:
1. Duty factor D =t
1
/ t
2
2. Peak T
J
=P
D