In its simplest form the thin Pak as illustrated in figure is a soldered assembly of a large power device usually at least a size and a thin ceramic lid The lid is metalized on the bottom side to mate to large and small device electrodes gate pilot cathode source etc which are connected by metalized vias to a more rugged and convenient pattern of top side metal If the lid material is a good thermal conductor and or the lid vias are very dense the thinPak lidded device can be cooled from both sides or treat ed as a flip chip device but with no restrictions on achiev able breakdown voltage The low impedance small size and weight and rather large mechan ical tolerances permissible on the top of the lid are convenient

Vic Temple

Description

In its simplest form, the thin- Pak as illustrated in figure 2 is a soldered assembly of a large power device, usually at least a size 4, and a thin ceramic lid. The lid is metalized on the bottom side to mate to large and small device electrodes (gate, pilot, cathode, source, etc.) which are connected by metalized vias to a more rugged and convenient pattern of top side metal. If the lid material is a good thermal conductor and/ or the lid vias are very dense, the thinPak lidded device can be cooled from both sides or treat- ed as a flip chip device, but with no restrictions on achiev- able breakdown voltage. The low impedance, small size and weight and rather large mechan- ical tolerances permissible on the top of the lid are convenient for module applications where their pre-testability leads to larger yields and better device paralleling, especially if parallel- ing bipolar devices with low for- ward drops like MCTs and diodes. The ceramic lid need not be the size of the power device in which case the lid proves a good foundation for integrating gate drivers, for example. Figure 3 shows how much smaller the size 6 and 8 thinPak packages are compared to commercial plastic packaged devices. Both the Automotive Integrated Power Module (AIPM) and soft- switched modules feature MCTs, in one because of the MCTs extraordinary pulse current capability and, in the other, because the p-type MCT is the premium high side switching device that has the ability to operate in an AIPM.

• packaging technology accounts


• side cooled


• nitride lid


• off capability


• lid


• back-side package


• ultra-high currents


• power device


• thinpak packaged

Sujets

• Temple
• Power semiconductor device

Informations

• Publié par: pefav
• Publié le: 01 novembre 2000
• Nombre de lectures: 42
• Langue: English

Extrait

SEMICONDUCTORS

ThinPak package for power modules and hybrids

ThinPak technology provides for at least a factor of two reduc tion in power module size. It eliminates wire bonds, results in near 100% yields, reduces parasitics by an order of magnitude and simplifies module manufacturing.

Dr. Vic Templ Silicon Power Corporatio

18PCIM Europe11/2000

Figure 1:Proposed AIPM. Note that the power switches are dwarfed by the bus, sensors and filter. The power device section’s small size is largely due to thinPak packaging

undation for integrating gate ivers, for example.Figure 3 ows how much smaller the ze 6 and 8 thinPak packages e compared to commercial astic packaged devices.

th the Automotive Integrated wer Module (AIPM) and soft- itched modules feature MCTs, one because of the MCTs traordinary pulse current pability and, in the other, cause the p-type MCT is the emium high side switching vice that has the ability to erate in an AIPM.

e central enabling feature for e planned automotive module nded by DoE’s AIPM program, a power device switch module hich simultaneously slashes oduction cost and multiplies erating lifetime. These provements result primarily om two innovations: integrat- liquid cooling, which reduces e temperature by providing tra-low thermal impedance,

ide patterned ceramic lid to active area for a very low mely high current capability. 2 or a 0.4 cmactive area device