MEDIUM SPEED OPERATION tPHL tPLH 30ns typ AT 10V

Sgs-Thomson Microelectronics

Description

Niveau: Supérieur, Master, Bac+4
HCC/HCF4069UB June 1989 HEX INVERTER DESCRIPTION .MEDIUM-SPEED OPERATION – tPHL, tPLH = 30ns (typ.) AT 10V .QUIESCENT CURRENT SPECIFIED TO 20V FOR HCC DEVICE .STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS .5V, 10V, AND 15V PARAMETRIC RATINGS . INPUT CURRENT OF 100nA AT 18V AND 25°C FOR HCC DEVICE .100% TESTED FOR QUIESCENT CURRENT .MEETS ALL REQUIREMENTS OF JEDECTEN- TATIVESTANDARDN°13A, ”STANDARD SPE- CIFICATIONS FOR DESCRIPTION OF ”B” SERIES CMOS DEVICES” The HCC4069UB (extended temperature range) and HCF4069UB (intermediate temperature range) are monolithic integrated circuit, available in 14-lead dual in-line plastic or ceramic package and plastic micro package. The HCC/HCF4069UB consists ofsix COS/MOS in- verter circuits. Thisdevice is intended forall general- purpose inverter applications where the medium-power TTL-drive and logic-level-conver- sion capabilities of circuits suchas HCC/HCF4049B Hex Inverter/Buffers are not required. EY (Plastic Package) F (Ceramic Frit Seal Package) M1 (Micro Package) C1 (Plastic Chip Carrier) ORDER CODES : HCC4069UBF HCF4069UBM1 HCF4069UBEY HCF4069UBC1 PIN CONNECTIONS 1/12

• transfer characteristics


• parameter value


• conditions symbol


• typical output


• characteristics


• quiescent current


• any input

Sujets

• Characteristic
• Biasing

Informations

• Publié par: larec
• Nombre de lectures: 38

Extrait

. MEDIUM-SPEEDOPERATION ±t,t=30ns(typ.)AT10V . QU P I H E L SC PL E H NTCURRENTSPECIFIEDTO20V FORHCCDEVICE . C ST H A A N R D A A C R TE DI R Z I E S D TICS SYMMETRICALOUTPUT . I 5 N V, P 1 U 0 T V C ,A U N RR D E 1 N 5 T V O P F AR 10 A 0 M n E A T A RI T C 18 R V AT A I N N D GS 25 ° CFORHCCDEVICE . 1 M 0 E 0 E % T T S E A S L T L E R D E F Q O UI R RE Q M UI E E N S T C S E O N F T J C E U D R E R C E T N E T N- T CI A F T I I C V A E TI S O TA N N S DA F R O D R N ° D 1 E 3 S A C ,º R S I T PT A I N O D N AR O D F SP ºB E º - SERIESCMOSDEVICESº DESCRIPTION TheHCC4069UB(extendedtemperaturerange) andHCF4069UB(intermediatetemperaturerange) aremonolithicintegratedcircuit,availablein14-lead dualin-lineplasticorceramicpackageandplastic micropackage. TheHCC/HCF4069UBconsistsofsixCOS/MOSin- vertercircuits.Thisdeviceisintendedforallgeneral- purposeinverterapplicationswherethe medium-powerTTL-driveandlogic-level-conver- sioncapabilitiesofcircuitssuchasHCC/HCF4049B HexInverter/Buffersarenotrequired. June1989 HCC/HCF4069UB HEXINVERTER FYE (PlasticPackage)(CeramicFritSealPackage) 1C 1M (MicroPackage) (PlasticChipCarrier) ORDERCODES: HCC4069UBFHCF4069UBM1 HCF4069UBEYHCF4069UBC1 PINCONNECTIONS /121

HCC/HCF4069UB SCHEMATICDIAGRAMOFONEOFSIXIDENTICALINVERTERS. ABSOLUTEMAXIMUMRATINGS SymbolParameterValueUnit V DD *SupplyVoltage:HCCTypes±0.5to+20V HCFTypes±0.5to+18V V i InputVoltage±0.5toV DD +0.5V I I DCInputCurrent(anyoneinput) ± 10mA P tot TotalPowerDissipation(perpackage)200mW DissipationperOutputTransistor forTop=FullPackage-temperatureRange100mW T op OperatingTemperature:HCCTypes±55to+125 ° C HCFTypes±40to+85 ° C T stg StorageTemperature±65to+150 ° C StressesabovethoselistedunderºAbsoluteMaximumRatingsºmaycausepermanentdamagetothedevice.Thisisastress ratingonlyandfunctionaloperationofthedeviceattheseoranyotherconditionsabovethoseindicatedintheoperationalsec- tionsofthisspecificationisnotimplied.Exposuretoabsolutemaximumratingconditionsforexternalperiodsmayaffectdevice reliability. *AllvoltagevaluesarereferredtoV SS pinvoltage. RECOMMENDEDOPERATINGCONDITIONS SymbolParameter V DD SupplyVoltage:HCCTypes HCFTypes V I InputVoltage T op OperatingTemperature:HCCTypes HCFTypes /221 eulaV 81ot3 51ot3 0toV DD ± ± 5 4 5 0 t t o o + + 1 8 2 5 5 tinU V V V C ° C °

HCC/HCF4069UB STATICELECTRICALCHARACTERISTICS(overrecommendedoperatingconditions) TestConditionsValue SymbolParameter V I V O |I O |V DD T Low *25 ° CT High * Unit (V)(V)( m A)(V) Min.Max.Min.Typ.Max.Min.Max. I L Quiescent0/550.250.010.257.5 Current HCC 0/10100.50.010.515 Types 0/151510.01130 0/202050.025150 m A 0/5510.0117.5 FCH Types 0/101020.01215 0/151540.01430 V OH OutputHigh0/5<154.954.954.95 Voltage 0/10<1109.959.959.95 V 0/15<11514.9514.9514.95 V OL OutputLow5/0<150.050.050.05 Voltage 10/0<1100.050.050.05 V 15/0<1150.050.050.05 V IH InputHigh0.5/4.5<15444 Voltage 1/9<110888 V 1.5/13.5<11512.512.512.5 V IL InputLow4.5/0.5<15111 Voltage 9/1<110222 V 13.5/1.5<1152.52.52.5 I OH Output0/52.55±2±1.6±3.2±1.15 Drive HCC 0/54.65±0.64±0.51±1±0.36 Current Types 0/109.510±1.6±1.3±2.6±0.9 0/1513.515±4.2±3.4±6.8±2.4 mA 0/52.55±1.53±1.36±3.2±1.1 HCF 0/54.65±0.52±0.44±1±0.36 Types 0/109.510±1.3±1.1±2.6±0.9 0/1513.515±3.6±3.0±6.8±2.4 I OL Output HCC 0/50.450.640.5110.36 C Si u n r k rent Types 0/100.5101.61.32.60.9 0/151.5154.23.46.82.4 mA HCF 0/50.450.520.4410.36 Types 0/100.5101.31.12.60.9 0/151.5153.63.06.82.4 I IH ,I IL I L n e p a u k t ageT H y C p C es 0/1818 ± 0.1 ± 10 ±5 ± 0.1 ± 1 Current AnyInput m A T H y C p F es 0/15 15 ± 0.3 ± 10 ±5 ± 0.3 ± 1 C I InputCapacitanceAnyInput57.5pF *T Low =±55 ° CforHCCdevice:±40 ° CforHCFdevice. *T T Hi h gh e = No + is 1 e 25 M ° a C rg f i o n r f H or C b C ot d h ev º i 1 c º e a : n + dº 8 0 5 º ° C le f v o e r li H s C : F 1 d V ev m ic in e . . withV DD =5V,2Vmin.withV DD =10V,2.5Vmin.withV DD =15V. 21/3

HCC/HCF4069UB DYNAMICELECTRICALCHARACTERISTICS(T=25 ° C,C=50pF,R=200k W , typicaltemperaturecoefficientforallV DD =0.3%/ ° Cva a l m u b es,allinput L riseandfall L time=20ns) SymbolParameter TestConditions Value Unit V DD (V)Min.Typ.Max. t PLH ,t PHL PropagationDelayTime555110 103060 ns 152550 5100200 1050100 ns 154080 T F y u p n i c c ti al on Vo o l f ta T g e e m T p r e a r n at s u f r e e r . Characteristicsasa t TLH ,t THL TransitionTime MinimumandMaximumVoltageTransferCharac- teristics. TypicalCurrentandVoltageTransferCharac- teristics. 21/4 TypicalOutputLow(sink)CurrentCharacteristics.

MinimumOutputLow(sink)CurrentCharac- teristics. MinimumOutputHigh(source)CurrentCharac- teristics. TypicalPropagationDelayTimevs.LoadCapacit- .ecna HCC/HCF4069UB TypicalOutputHigh(source)CurrentCharac- teristics. TypicalPropagationDelayTimevs.LoadCapacit- .ecna TypicalTransitionTimevs.LoadCapacitance. 21/5

HCC/HCF4069UB TypicalDynamicPowerDissipation/perInvertervs. Frequency. APPLICATIONS TypicalCrystalOscillatorCircuit. HighInputImpedanceAmplifier. 21/6 VariationofNormalizedPropagationDelayTime (t PHL andt PLH )withSupplyVoltage. TypicalRCOscillatorCircuit. InputPulseShapingCircuit(schmitttrigger).

DYNAMICELECTRICALCHARACTERISTICSANDWAVEFORMS TESTCIRCUITS QuiescentDeviceCurrent. InputLeakageCurrent. NoiseImmunity. HCC/HCF4069UB 21/7

HCC/HCF4069UB 21/8 ID.M 1a B b 1b D E e 3e F I L Z .NIM 15.0 93.1 72.1 PlasticDIP14MECHANICALDATA mm .PYT 5.0 52.0 5.8 45.2 42.51 33. AM.X 56.1 02 1.7 .51 5.24 .NIM 0.002 550.0 0.005 hcni .PYT 020.0 010.0 .0533 001.0 006.0 031.0 .XAM 560.0 .0787 082.0 102.0 001.0 100PA

.MID A B D E 3e F G H L M N P Q .NIM .083 92.2 4.0 71.1 22.0 25.1 8.7 CeramicDIP14/1MECHANICALDATA mm .PYT 3.3 .5142 .XAM 02 0.7 97.2 55.0 25.1 13.0 45.2 3.01 50.8 80.5 .NIM .0510 090.0 610.0 640.0 900.0 060.0 703.0 HCC/HCF4069UB hcni .PYT 031.0 006.0 .XAM 787.0 672.0 011.0 220.0 060.0 210.0 001.0 604.0 713.0 002.0 0PC35 21/9

HCC/HCF4069UB 121/0 .MID A 1a 2a b 1b C 1c D E e 3e F G L M S .NIM 1.0 53.0 91.0 5.85 8.5 8.3 6.4 5.0 SO14MECHANICALDATA mm .PYT 5.0 72.1 26.7 MAX.MIN. 57.1 0.20.003 56.1 0.460.013 0.250.007 45 ° (typ.) 8.750.336 6.20.228 4.00.149 5.30.181 1.270.019 86.0 8 ° (max.) hcni .PYT 910.0 050.0 003.0 .XAM 860.0 700.0 460.0 810.0 010.0 443.0 442.0 751.0 802.0 050.0 620.0 G310P

.MID A B D 1d 2d E e 3e F G M 1M .NIM 87.9 98.8 2.4 73.7 PLCC20MECHANICALDATA mm .PYT 45.2 65.0 72.1 80.5 83.0 72.1 41.1 M.XA 30.01 40.9 75.4 83.8 101.0 .NIM 583.0 3.005 561.0 092.0 HCC/HCF4069UB hcni .PYT 001.0 220.0 050.0 002.0 510.0 050.0 540.0 .XAM 593.0 653.0 081.0 033.0 0.040 A720P /1121