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1N4001 1N4007

3 pages
Niveau: Supérieur, Doctorat, Bac+8
1N4001-1N4007 1N4001-1N4007, Rev. C1?2003 Fairchild Semiconductor Corporation 1N4001 - 1N4007 General Purpose Rectifiers Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Electrical Characteristics TA = 25°C unless otherwise noted Features • Low forward voltage drop. • High surge current capability. Symbol Parameter Device Units 4001 4002 4003 4004 4005 4006 4007 VF Forward Voltage @ 1.0 A 1.1 V Irr Maximum Full Load Reverse Current, Full Cycle TA = 75°C 30 µA IR Reverse Current @ rated VR TA = 25°C TA = 100°C 5.0 500 µA µA CT Total Capacitance VR = 4.0 V, f = 1.0 MHz 15 pF DO-41 COLOR BAND DENOTES CATHODE Symbol Parameter Value Units 4001 4002 4003 4004 4005 4006 4007 VRRM Peak Repetitive Reverse Voltage 50 100 200 400 600 800 1000 V IF(AV) Average Rectified Forward Current, .375 lead length @ TA = 75°C 1.0 A IFSM Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave 30 A Tstg Storage Temperature Range -55 to +175 °C TJ Operating Junction Temperature -55 to +175 °C Symbol Parameter Value Units PD Power Dissipation 3.0 W R?JA Thermal Resistance, Junction to Ambient 50 °C/W Thermal Characteristics

  • vf forward

  • forward current

  • ms single

  • maximum full

  • repetitive reverse

  • temperature range

  • µa

  • low forward

  • thermal characteristics


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Features Low forward voltage drop. High surge current capability.
1N4001  1N4007
General Purpose Rectifiers
1 TES CATHODE
Absolute Maximum Ratings*A T =25°C unless otherwise noted Symbol ParameterValue Units 4001 4002 4003 4004 40054006 4007 VRRMV800 1000200 400 60050 100Repetitive Reverse Voltage Peak IF(AV) AverageRectified Forward Current, 1.0 A .375 " lead length @ TA= 75°C IFSM NonrepetitivePeak Forward Surge Current 30A 8.3 ms Single HalfSineWave T StorageTemperature Range55 to +175°C stg T OperatingJunction Temperature55 to +175 J°C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics Symbol Parameter PDDissipation Power Thermal Resistance, Junction to Ambient RJA
Value 3.0 50
Units W °C/W
Electrical CharacteristicsA T= 25°C unless otherwise noted Symbol ParameterDevice Units 4001 4002 4003 4004 40054006 4007 VFVoltage @ 1.0 A Forward1.1 V Irr MaximumFull Load Reverse Current, Full30µA Cycle T= 75°C A IR Reverse25Current @ rated VT =°C 5.0µA R A 500 T =100°CµA A CT TotalCapacitance 15pF  V= 4.0 V, f = 1.0 MHz R
2003 Fairchild Semiconductor Corporation
1N40011N4007, Rev. C1
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