Cet ouvrage fait partie de la bibliothèque YouScribe
Obtenez un accès à la bibliothèque pour le lire en ligne
En savoir plus

APT website http: www advancedpower com

De
7 pages
Niveau: Supérieur, Doctorat, Bac+8
APT10M11JVRU3 A PT 10 M 11 JV RU 3 – R ev 0 O ct ob er , 2 00 4 APT website – 1 – 7 ISOTOP? Absolute maximum ratings These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. A S G D Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 100 V Tc = 25°C 142 ID Continuous Drain Current Tc = 80°C 106 IDM Pulsed Drain current 576 A VGS Gate - Source Voltage ±30 V RDSon Drain - Source ON Resistance 11 m? PD Maximum Power Dissipation Tc = 25°C 450 W IAR Avalanche current (repetitive and non repetitive) 144 A EAR Repetitive Avalanche Energy 50 EAS Single Pulse Avalanche Energy 2500 mJ IFAV Maximum Average Forward Current Duty cycle=0.5 Tc = 90°C 30 IFRMS RMS Forward Current (Square wave, 50% duty) 47 A VDSS = 100V RDSon = 11m? max @ Tj = 25°C ID = 142A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies Features • Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic diode - Avalanche energy rated - Very rugged • ISOTOP® Package (SOT-227) • Very low stray inductance • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case

  • vgs

  • charge

  • reverse recovery

  • drain current

  • irrm maximum

  • vgs gate - source

  • low rdson - low

  • gate charge - fast intrinsic

  • voltage vgs


Voir plus Voir moins
Unit V
A
V mW A mJ
® ISOTOP Buck chopper OSFET Power Module
G
ApplicatioAC and DC motor control Switched Mode Power Supplies Features® Power MOS V MOSFETs -Low RDSon-Low input and Miller capacitance -Low gate charge -Fast intrinsic diode -Avalanche energy rated -Very rugged ® (SOT-227)ISOTOP Package Very low stray inductance High level of integration Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Very rugged Low profile
1 7
S
S
APT website http:/ www.advancedpower.com
A
D
D
APT10M11JV
VDSS= 100V RDSon= 11mmax @ Tj = 25°C ID= 142A @ Tc = 25°C
U3
A
ISOTOP Absolute maximum ratings ymbol Parameter Max ratings VDSS100- Source Breakdown Voltage  Drain Tc142= 25°C ID Continuous Drain Current Tc106= 80°C IDM Pulsed 576Drain current VGS±30- Source Voltage  Gate RDSon Drain - Source ON Resistance 11 PDPower Dissipation  Maximum Tc450= 25°C IAR Avalanche current (repetitive and non repetitive) 144 EAR Repetitive Avalanche Energy 50 EAS2500Pulse Avalanche Energy  Single IFA VTc = 90°C 30Average Forward Current Duty cycle=0.5  Maximum IFRMS RMS Forward Current (Square wave, 50% duty) 47  These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Un pour Un
Permettre à tous d'accéder à la lecture
Pour chaque accès à la bibliothèque, YouScribe donne un accès à une personne dans le besoin