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APT website http: www advancedpower com

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6 pages
Niveau: Supérieur, Doctorat, Bac+8
APTM10DAM02 A PT M 10 D A M 02 – R ev 0 M ay , 2 00 5 APT website – 1 - 6 G2 S2 VBUS 0/VBUS CR1 OUT Q2 OUT0/VBUSVBUS G2 S2 Absolute maximum ratings These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 100 V Tc = 25°C 495 ID Continuous Drain Current Tc = 80°C 370 IDM Pulsed Drain current 1900 A VGS Gate - Source Voltage ±30 V RDSon Drain - Source ON Resistance 2.5 m? PD Maximum Power Dissipation Tc = 25°C 1250 W IAR Avalanche current (repetitive and non repetitive) 100 A EAR Repetitive Avalanche Energy 50 EAS Single Pulse Avalanche Energy 3000 mJ VDSS = 100V RDSon = 2.25m? typ @ Tj = 25°C ID = 495A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile Boost chopper MOSFET Power Module

  • source voltage

  • gate charge

  • vgs

  • drain current

  • junction temperature

  • low voltage

  • maximum effective

  • package characteristics

  • avalanche current


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APTM10DAM02
VDSS= 100V oos choppe RDSon= 2.25mtyp @ Tj = 25°C MOSFET Power Module ID= 495A @ Tc = 25°C Applicatio VBUS AC and DC motor control CR1 Switched Mode Power Supplies Power Factor Correction OUT Features Q2 ® Power MOS VMOSFETs -Low RDSonG2 -Low input and Miller capacitance -Low gate charge S2-Avalanche energy rated 0/VBUS -Very rugged Kelvin source for easy drive Very low stray inductance -Symmetrical design -M5 power connectors High level of integration V BUS0/VBUS OUT Benefits S2 G2 Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile Absolute maximumratingsymbol ParameterMa ratingsUnit VDSS- Source Breakdown Voltage100 V Drain Tc= 25°C495 ID ContinuousDrain Current Tc= 80°C370 A IDM1900Drain current Pulsed VGS Gate- Source Voltage±30 V RDSon- Source ON Resistance Drain2.5 mPDT MaximumPower Dissipationc= 25°C1250 W IAR100 Acurrent (repetitive and non repetitive) Avalanche EAR50Avalanche Energy Repetitive mJ EAS SinglePulse Avalanche Energy3000  TheseDevices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT websitehttp:/ www.advancedpower.com
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