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APTM10DAM02
VDSS= 100V oos choppe RDSon= 2.25mtyp @ Tj = 25°C MOSFET Power Module ID= 495A @ Tc = 25°C Applicatio VBUS AC and DC motor control CR1 Switched Mode Power Supplies Power Factor Correction OUT Features Q2 ® Power MOS VMOSFETs -Low RDSonG2 -Low input and Miller capacitance -Low gate charge S2-Avalanche energy rated 0/VBUS -Very rugged Kelvin source for easy drive Very low stray inductance -Symmetrical design -M5 power connectors High level of integration V BUS0/VBUS OUT Benefits S2 G2 Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile Absolute maximumratingsymbol ParameterMa ratingsUnit VDSS- Source Breakdown Voltage100 V Drain Tc= 25°C495 ID ContinuousDrain Current Tc= 80°C370 A IDM1900Drain current Pulsed VGS Gate- Source Voltage±30 V RDSon- Source ON Resistance Drain2.5 mPDT MaximumPower Dissipationc= 25°C1250 W IAR100 Acurrent (repetitive and non repetitive) Avalanche EAR50Avalanche Energy Repetitive mJ EAS SinglePulse Avalanche Energy3000  TheseDevices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT websitehttp:/ www.advancedpower.com
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