APT website http: www advancedpower com

Pdoumergue

Description

Niveau: Supérieur, Doctorat, Bac+8
APTM10DAM02 A PT M 10 D A M 02 – R ev 0 M ay , 2 00 5 APT website – 1 - 6 G2 S2 VBUS 0/VBUS CR1 OUT Q2 OUT0/VBUSVBUS G2 S2 Absolute maximum ratings These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 100 V Tc = 25°C 495 ID Continuous Drain Current Tc = 80°C 370 IDM Pulsed Drain current 1900 A VGS Gate - Source Voltage ±30 V RDSon Drain - Source ON Resistance 2.5 m? PD Maximum Power Dissipation Tc = 25°C 1250 W IAR Avalanche current (repetitive and non repetitive) 100 A EAR Repetitive Avalanche Energy 50 EAS Single Pulse Avalanche Energy 3000 mJ VDSS = 100V RDSon = 2.25m? typ @ Tj = 25°C ID = 495A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile Boost chopper MOSFET Power Module

• source voltage


• gate charge


• vgs


• drain current


• junction temperature


• low voltage


• maximum effective


• package characteristics


• avalanche current

Sujets

• Junction temperature
• Low voltage

Informations

• Publié par: profil-zyak-2012
• Nombre de lectures: 73

Extrait

APTM10DAM02

V DSS = 100V oos choppe R DSon = 2.25mΩtyp @ Tj = 25°C MOSFET Power Module I D = 495A @ Tc = 25°C Applicatio VBUS •AC and DC motor control CR1 •Switched Mode Power Supplies •Power Factor Correction OUT Features Q2 ® •Power MOS VMOSFETs -Low R DSon G2 -Low input and Miller capacitance -Low gate charge S2 -Avalanche energy rated 0/VBUS -Very rugged •Kelvin source for easy drive •Very low stray inductance -Symmetrical design -M5 power connectors •High level of integration V BUS0/VBUS OUT Benefits S2 G2 •Outstanding performance at high frequency operation •Direct mounting to heatsink (isolated package) •Low junction to case thermal resistance •Low profile Absolute maximumratings ymbol ParameterMa ratingsUnit V DSS - Source Breakdown Voltage100 V Drain T c = 25°C495 I D  ContinuousDrain Current T c = 80°C 370 A I DM 1900Drain current Pulsed V GS  Gate- Source Voltage±30 V R DSon - Source ON Resistance Drain 2.5 m Ω P D T MaximumPower Dissipation c = 25°C1250 W I AR 100 Acurrent (repetitive and non repetitive) Avalanche E AR 50Avalanche Energy Repetitive mJ E AS  SinglePulse Avalanche Energy3000  TheseDevices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.

APT websitehttp:/ www.advancedpower.com

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