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APTM10SKM02
VDSS= 100V uck choppe RDSon= 2.25mtyp @ Tj = 25°C MOSFET Power Module ID= 495A @ Tc = 25°C Applicatio VB US Q1 AC and DC motor control Switched Mode Power Supplies G1 Features OUT ® S1 Power MOS VMOSFETs -Low RDSonCR2 -Low input and Miller capacitance -Low gate charge -Avalanche energy rated -Very rugged 0/VBUS Kelvin source for easy drive Very low stray inductance -Symmetrical design -M5 power connectors High level of integration G1 V BUS0/VBUS OUT S1Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile Absolute maximumratingsymbol ParameterMa ratingsUnit VDSS- Source Breakdown Voltage Drain100 V Tc495= 25°C ID ContinuousDrain Current Tc370 A= 80°C IDMDrain current1900 Pulsed VGS±30 V Gate- Source Voltage RDSon- Source ON Resistance2.5 m DrainPDTPower Dissipation Maximumc1250 W= 25°C IAR Avalanchecurrent (repetitive and non repetitive)100 A EARAvalanche Energy Repetitive50 mJ EAS3000 SinglePulse Avalanche Energy  TheseDevices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT websitehttp:/ www.advancedpower.com
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