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APT website http: www advancedpower com

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6 pages
Niveau: Supérieur, Doctorat, Bac+8
APTM10SKM02 A PT M 10 SK M 02 – R ev 0 M ay , 2 00 5 APT website – 1 - 6 Q1 S1 OUT 0/VBUS CR2 VBUS G1 OUTG1 S1 0/VBUSVBUS Absolute maximum ratings These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 100 V Tc = 25°C 495 ID Continuous Drain Current Tc = 80°C 370 IDM Pulsed Drain current 1900 A VGS Gate - Source Voltage ±30 V RDSon Drain - Source ON Resistance 2.5 m? PD Maximum Power Dissipation Tc = 25°C 1250 W IAR Avalanche current (repetitive and non repetitive) 100 A EAR Repetitive Avalanche Energy 50 EAS Single Pulse Avalanche Energy 3000 mJ VDSS = 100V RDSon = 2.25m? typ @ Tj = 25°C ID = 495A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies Features • Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile Buck chopper MOSFET Power Module

  • source voltage

  • gate charge

  • vgs

  • drain current

  • junction temperature

  • low voltage

  • maximum effective

  • package characteristics

  • avalanche current


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APTM10SKM02
VDSS= 100V uck choppe RDSon= 2.25mtyp @ Tj = 25°C MOSFET Power Module ID= 495A @ Tc = 25°C Applicatio VB US Q1 AC and DC motor control Switched Mode Power Supplies G1 Features OUT ® S1 Power MOS VMOSFETs -Low RDSonCR2 -Low input and Miller capacitance -Low gate charge -Avalanche energy rated -Very rugged 0/VBUS Kelvin source for easy drive Very low stray inductance -Symmetrical design -M5 power connectors High level of integration G1 V BUS0/VBUS OUT S1Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile Absolute maximumratingsymbol ParameterMa ratingsUnit VDSS- Source Breakdown Voltage Drain100 V Tc495= 25°C ID ContinuousDrain Current Tc370 A= 80°C IDMDrain current1900 Pulsed VGS±30 V Gate- Source Voltage RDSon- Source ON Resistance2.5 m DrainPDTPower Dissipation Maximumc1250 W= 25°C IAR Avalanchecurrent (repetitive and non repetitive)100 A EARAvalanche Energy Repetitive50 mJ EAS3000 SinglePulse Avalanche Energy  TheseDevices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT websitehttp:/ www.advancedpower.com
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