Electrochemical nanopatterning of Si surfaces through insulating layers by atomic force microscope scratching [Elektronische Ressource] / vorgelegt von Zhang, Yan
182 pages
English

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Electrochemical nanopatterning of Si surfaces through insulating layers by atomic force microscope scratching [Elektronische Ressource] / vorgelegt von Zhang, Yan

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182 pages
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Electrochemical nanopatterning of Si surfaces through insulating layers by Atomic Force Microscope scratching Der Technischen Fakultät der Universität Erlangen-Nürnberg zur Erlangung des Grades DOKTOR-INGENIEUR vorgelegt von Zhang, Yan Erlangen 2007 Als Dissertation genehmigt von der Technischen Fakultät der Universität Erlangen-Nürnberg Tag der Einreichung: 14.12.2007 Tag der Promotion: 14.04.2008 Dekan: Professor Dr. –Ing. Habil. J. Huber Berichterstatter: Professor Dr. Sc. Tech. P. Schmuki Professor Dr. Rer. Nat. A. Winnacker Elektrochemische Nanostrukturierung von Si-Oberflächen durch selektives Ritzen von isolierenden Dünnfilmen mit dem Rasterkraftmikroskop Der Technischen Fakultät der Universität Erlangen-Nürnberg zur Erlangung des Grades DOKTOR-INGENIEUR vorgelegt von Zhang, Yan Erlangen 2007 Acknowledgements A journey is easier when you travel together. Interdependence is certainly more valuable than independence. During the time of my PhD, I have been accompanied and supported by many people. It is a pleasant aspect that I have now the opportunity to express my gratitude for all of them. The first person I would like to thank is my supervisor Patrik Schmuki. I have been in his lab since 2002 when I started my PhD.

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Publié par
Publié le 01 janvier 2008
Nombre de lectures 8
Langue English
Poids de l'ouvrage 5 Mo

Extrait

Electrochemical nanopatterning of Si
surfaces through insulating layers
by Atomic Force Microscope scratching


Der Technischen Fakultät der
Universität Erlangen-Nürnberg
zur Erlangung des Grades



DOKTOR-INGENIEUR


vorgelegt von

Zhang, Yan


Erlangen 2007















Als Dissertation genehmigt von
der Technischen Fakultät der
Universität Erlangen-Nürnberg



Tag der Einreichung: 14.12.2007
Tag der Promotion: 14.04.2008
Dekan: Professor Dr. –Ing. Habil. J. Huber
Berichterstatter: Professor Dr. Sc. Tech. P. Schmuki
Professor Dr. Rer. Nat. A. Winnacker


Elektrochemische Nanostrukturierung von
Si-Oberflächen durch selektives Ritzen von
isolierenden Dünnfilmen mit dem
Rasterkraftmikroskop


Der Technischen Fakultät der
Universität Erlangen-Nürnberg
zur Erlangung des Grades



DOKTOR-INGENIEUR

vorgelegt von

Zhang, Yan


Erlangen 2007

Acknowledgements

A journey is easier when you travel together. Interdependence is certainly more valuable than
independence. During the time of my PhD, I have been accompanied and supported by many
people. It is a pleasant aspect that I have now the opportunity to express my gratitude for all of
them.
The first person I would like to thank is my supervisor Patrik Schmuki. I have been in his lab
since 2002 when I started my PhD. During these years, His enthusiasm and integral view on
research and his mission for providing 'high-quality papers', has made a deep impression on me.
Besides of being an excellent supervisor, Patrik is also a good friend to give me some advises for
life.
I would like to thank my best friends Eugeniu Balaur and Andrei Ghicov who always help me. I
would like to thank lovely Helga Hildebrand who not only performed the surface analysis but
also helped me for general stuffs and Julia Kunze and Sebastian Kleber (Poldi) who helped me
for the German translation.
I cannot forget the guide of Stefan Fenchel, Lionel Santinacci and Thierry Djenizian. I thank
them all for having shared many experiences and thoughts with me. I would also like to thank all
my colleagues of LKO who gave me the feeling of being at home at work.
I would like to thank Prof Göken and Greil, Dr. Karsten Durst and Peter Cromme to offer me the
chance to use their AFM.
I would also like to thank the others who took effort in providing me with valuable comments on
this thesis: Prof. Sannakaisa Virtanen, Yosuke Kawamura, James Ellis, Kai Kessler, Kunyuan
Gao, Yin Xiaowei, Zhou Hongben, Zhou Yizhou, Andres Munoz and Dong Wensheng.
I am very grateful for my parents for their love and patience during the PhD period.



Contents

Abstract...........................................................................................................................................1
Introduction ....................................................................................................................................5
Chapter 1......................................................................................................................11
Overview................11
1.1 Micro- and nano-structuring.................................................................................................11
1.2 Techniques based on scanning probe microscopy ...............................................................13
1.3 Metal Electrochemical Deposition.......................................................................................14
Chapter 2.................19
Theoretical Aspects and Literature Overview...........................................................................19
2.1 Atomic force microscopy.....................................................................................................19
2.1.1 Introduction ..................................................................................................................19
2.1.2 AFM Principle..............................................................................................................20
2.1.3 AFM Operation Modes22
2.2 Nanomechanics ....................................................................................................................26
2.2.1 Force vs. Distance Curves............................................................................................26
2.2.2 Load vs. penetration depth curve .................................................................................29
2.2.3 Phase transformation32
2.3 Semiconductor electrochemistry..........................................................................................35
2.3.1 N- and P-type Semiconductors: Doping.......................................................................35
2.3.2 the semiconductor-electrolyte interface .......................................................................36
2.3.3 Mechanism for deposition of metals onto an n-type semiconductor ...........................38
2.3.4 Breakdown of the Space Charge Layer........................................................................40
2.3.5 Schottky Barriers (Metal-Semiconductor Junctions) ...................................................41
2.4 Metal electrochemical deposition.........................................................................................43
2.4.1 Kinetics and Mechanism of Electrodeposition.............................................................43
2.4.2 Deposition of a metal on a foreign substrate................................................................45
2.4.3 Nucleation and Growth ................................................................................................46
2.4.4 Typical morphology of electrodeposited films ............................................................50
2.5 Self-assembled Monolayer...................................................................................................53
2.5.1 Definition of Self-assembled Monolayer (SAM).........................................................53
2.5.2 Advantages of Self-assembled Monolayers .................................................................55
2.5.3 SAMs Formation..........................................................................................................56
Chapter 3.......................................................................................................................................59
Experimental.................................................................................................................................59
3.1 Sample preparation...............................................................................................................59
3.1.1 H-terminated Si..59
3.1.2 organic layer coated Si .................................................................................................59
3.2 Scratching.............................................................................................................................60
3.2.1 Atomic force microscopes............................................................................................60
3.2.2 AFM-tips.....61
3.2.3 Atomic force microscopes operating............................................................................63
3.2.4 Nanoscratching.............................................................................................................65






3.2.5 Micro-scratching ..........................................................................................................67
3.3 Electrochemical experiments ...............................................................................................67
3.3.1 Electrolytes...................................................................................................................67
3.3.2 Electrochemical cell .....................................................................................................68
3.3.3 Electrochemical techniques..........................................................................................68
3.4 Characterization techniques .................................................................................................69
3.4.1 Scanning electron microscopy (SEM)..........................................................................69
3.4.2 Auger electron spectroscopy (AES).............................................................................70
3.4.3 X-ray photoelectron spectroscopy (XPS or ESCA) .....................................................70
Chapter 4.......................................................................................................................................73
Results and Discussion........73
4.1 Copper electrodeposited on scratched oxide covered Si......................................................73
4.1.1a AFM-scratching of Si surfaces...................................................................................73
4.1.1b Scratching induced selective electrochemical metal deposition ..............

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