Fabrication and characterisation of AlGaN/GaN high electron mobility transistors for power applications [Elektronische Ressource] / vorgelegt von Juraj Bernát

Informations

• Publié par: rheinisch-westfalischen_technischen_hochschule_-rwth-_aachen
• Publié le: 01 janvier 2005
• Nombre de lectures: 14
• Langue: English
• Poids de l'ouvrage: 28 Mo

Extrait

vFmabricationhandHoCharacterisationausofersit?tsprofessorAlGaN/GaNDieseHighIngenieurwissenscElectronDiplom-IngenieurMobilitwyDr.Tescanransistors17.fordenPulbibliothekogenehmigtewverjApplicationsoprad,VeionUnivderL?thFA.akult?tagf?rhenElektrotecerhnikistundternetseitenInformationstechschnikvderhaftenRheiniscDissertationhWorgelegtestf?lisconhenJuraTBern?tecPhniscSlohenakHoBericcter:hscersit?tsprofessorhH.uleUnivADr.-Ing.acVhenTzurderErlangung?ndlicdesPr?fung:akOktoba2005deDissertationmiaufscInhenderGcradesheinesonlineDoktorserf?gbar.derTCon.ten.ts.1TIn6.1.4tro.ductionMicroscop1oltage2islMotivcation.and.Presen.t.Status.of.AlGaN/GaN.HEMT.s.3.2.1.Motiv.ation..........................HEMT...................pro...hnology...P...45.............A3.2.2.GaN-based.HEMT.sdelin.n.um.bners....36.39.cess...6.1.1.......con.......41.........ads.......6.2..5.3.Material6.3Systems.Based.on.GaN.9y3.1.Prop.erties.oftecGaN......6.6.........47.......33.F...............34.Line.............5.4.m....9.3.2.2DEG.in.AlGaN/GaNProMaterialcSystemsStandard.hnology.........of.............6.1.2.ts..........12.3.3.ElectronScTtactsransp.ort.in.AlGaN/GaN........tact.................tec...............Bridge..13.3.3.1.Lo.w.T.emp.erature45Mobilationitandy............Field..................................16.3.3.2.Hi.gh.T.emp.erature.Mobilit.y..5.2.tomic.orce.y.............................5.3.ransmission.Mo.(TLM)17.4.High.Electron.Mobilit.y.T.ransistor.19.4.1.Basic.Principles35ofCapacitance-VHEMTMeasurese.ts.......................6.cessing.e.hnology.6.1.AlGaN/GaN.tec.pro..............19394.1.1DenitionDriftmesaMobilitandsy......................40.Ohmic.tac...............................6.1.3.hottky23on4.2.Small-Signal.Mo.del......................42.Con.P...............................43.MOSHFET.hnology24cess4.3.Large-Signal.Mo.del..................44.Air.tec...............................6.4.assiv.la.ers.materials26.4.4.Thermal.Eects.in.AlGaN/GaN.HEMT.s..........6.5.plate.hnology........................29.5.Determination46ofMasksHeterostructure.P.arameters.33.5.1.Hall.Eect.Measuremen.ts........................ii.CONTENTS.7.AlGaN/GaNhnLaertiesyStandarder.Structuresdellingon.SiCcollapse53.7.1GateComp.osition.of.La.y.ers....hnology.........ngsze...a.A.3.116...o.........e.........Collapse.......measuremen...9553.7.2.EnergyAlGaN/GaNband105diagramhingsim.ulations................82...........ation.....Field.gy.ulations.......structu55.7.3.A.tomicInuenceFCurrorceonMicroscop.y.(AFM)..Static.s...9.........m.........t.F.h".10.115.........A.256abrication7.4.Electrical.c.haracterisationtactof.l.a.yFer.structures..........Output.er.................9.4.surface..58.8.Unpassiv.a.ted85AlGaN/GaNTHEMTls10.1ondSiC.63.8.1.Static.c.haracterisation....10.2.measuremen.............88.T.cess.n.11.1.curren.............91.rf.non-collapsed.........11.363.8.1.1.St.a.t.i.c.output.andStresstransfernc.haracteristics............96.age.99."Made.h.trum.14.Zusammenfass.APPENDIXES.Pro64Mesa8.1.2.B.reakdo.wn.v.oltage........Con.ts...............hottky.abrication.............P............65.8.2.Drift116mobilit.y.of.HEMT.s9.3.p.w...................................84.Mo.of.passiv.eects........67.8.3.Thermal.eects..Channel.temp10eraturePlate.ec.o.o.87.Electric.l.sim..........................69.8.487RFRealcreharacterisationts...........................11.of.ec.Pro.on.e.t.91.Eliminati.of.t..............71.8.5.Pulse.measuremen.ts....11.2.and.prop.of.HEMT.................3.Pulse.ts..........................75.8.6.Output11.4pmeasureoewtser..............................12.Leak.Curren.Reduction.13.HEMT.in.orsc.u.n.J?lic.103.Conclusion.15.ung.9.A.HEMT.cessing.A.176etc9.Inuence.of.Surface.P.assiv.ation.on.Device.P.e.r.fo.r.mance.79.9.1.Static115andOhmicsmallt-signalcpropFerties..........................115.Sc.Con.F..............79.9.2.Pulse.measuremen.ts....A.4.ads.abrication..................................3 4
withBAMOSHFET.Pro.cessingo117.B.1.MesaNetcbhingSc...C.HEMT...of.123...131...F.......ec.Programmes.......D.2.50.er.on.hnology.E.Ph.A.Curriculum.117.Con..........117.B.2.OhmicBridgeCon119tactsSimFD.1abricationulation.............ulati.HEMT.Si.la...Sim.AlGaN/GaN.T.....of.127.Constan.y.k.t.e...B.5.hottky117tactB.3abricationP.ads.F.abrication..................117.Air.T.hnology.D.TLAS.ulation.121.AlGaN/GaN.sim.........................121.Sim117onB.4AlGaN/GaNDepwithositionnmoCONTENTSiiipassivfationisolationyla.y.erD.3.ulati.of.HEMT.FieldPlate.ec.......125.List.Sym.ols.F.ysical.ts.Bibliograph.139.c.n.wledgemen.151.Vita.153.CONTENTSiv0.7eV 6.2eV
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