N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

Sgs-Thomson Microelectronics

Description

Niveau: Secondaire, Lycée, Terminale
STP20N06 STP20N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR n TYPICAL RDS(on) = 0.06 ? n AVALANCHE RUGGED TECHNOLOGY n 100% AVALANCHE TESTED n REPETITIVE AVALANCHE DATA AT 100oC n LOW GATE CHARGE n HIGH CURRENT CAPABILITY n 175oC OPERATING TEMPERATURE n APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS n HIGH CURRENT, HIGH SPEED SWITCHING n SOLENOID AND RELAY DRIVERS n REGULATORS n DC-DC & DC-AC CONVERTERS n MOTOR CONTROL, AUDIO AMPLIFIERS n AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) INTERNAL SCHEMATIC DIAGRAM TYPE VDSS RDS(on) ID STP20N06 STP20N06FI 60 V 60 V < 0.085 ? < 0.085 ? 20 A 13 A 1 2 3 TO-220 ISOWATT220 December 1996 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP20N06 STP20N06FI VDS Drain-source Voltage (VGS = 0) 60 V VDG R Drain- gate Voltage (RGS = 20 k?) 60 V VGS Gate-source Voltage ± 20 V ID Drain Current (cont inuous) at Tc = 25 oC 20 13 A ID Drain Current (cont inuous) at Tc = 100 oC 14 9 A IDM(•) Drain Current (pulsed) 80 80 A Ptot Total Dissipation at Tc = 25 oC 80 35 W Derating Factor 0.53 0.23 W/oC VISO Insulat ion Withstand Voltage (DC) ? 2000 V Tstg Storage Temperature -65 to 175 oC Tj Max.

• avalanche characteristics


• drain current


• gate-drain charge


• gate voltage


• pf


• µa

Sujets

• Première
• Rating
• Reverse
• Thermal
• Threshold voltage

Informations

• Publié par: profil-zyan-2012
• Nombre de lectures: 28

Extrait

Unit

1/10

ABSOLUTE MAXIMUM RATINGS

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

Val ue ST P20N06FI 60 60 #20 13 9 80 35 0.23 2000

-65 to 175 175

TO-220

STP 20N06

STP20N06 STP20N06FI

TYP E STP 20N06 STP 20N06FI

APPLICATIONS n HIGH CURRENT, HIGH SPEED SWITCHING n SOLENOID AND RELAY DRIVERS n REGULATORS n DC-DC & DC-AC CONVERTERS n MOTOR CONTROL, AUDIO AMPLIFIERS n AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)

P arameter

December 1996

INTERNAL SCHEMATIC DIAGRAM

3 2 1

3 2 1

ISOWATT220

V V V A A A W o W/ C V o C o C

20 14 80 80 0. 53 '

Symb ol

V D S Drain-sour ce Voltage (V GS = 0) V DG R Drain- gate Voltage (R GS = 20 kW) V GS VoltageGate-s ource o I D TDrain Current (cont inuous) at c = 25 C o I D Drain Current (cont Tinuous) at c C= 100 I D M (w) Drain ed)Current (puls o P tot T otal Dissipation at T c = 25 C Derating F actor V ISO Withstand V I nsulat ion oltage (DC) T stg St orage Temperat ure T j Max. Operat ing Junction Temperatur e (w) Pulse width limited by safe operating area

V DSS 60 V 60 V

R DS ( on) < 0.085W < 0.085W

n TYPICAL R DS(on) = 0.06W n AVALANCHE RUGGED TECHNOLOGY n 100% AVALANCHE TESTED o n REPETITIVE AVALANCHE DATA AT 100 C n LOW GATE CHARGE n HIGH CURRENT CAPABILITY o n 175 C OPERATING TEMPERATURE n APPLICATION ORIENTED CHARACTERIZATION

I D 20 A 13 A