SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS ISSUE NOVEMBER FEATURES Extremely low equivalent on resistance RCE sat Amps continuous current Up to Amps peak current Very low saturation voltage Excellent hFE characteristics specified upto Amps

Description

Niveau: Secondaire, Lycée, Terminale
SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS ISSUE 2 - NOVEMBER 1995 FEATURES * Extremely low equivalent on-resistance; RCE(sat) * 6 Amps continuous current * Up to 20 Amps peak current * Very low saturation voltage * Excellent hFE characteristics specified upto 20 Amps PARTMARKING DETAILS — DEVICE TYPE IN FULL ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL FZT948 FZT949 UNIT Collector-Base Voltage VCBO -40 -50 V Collector-Emitter Voltage VCEO -20 -30 V Emitter-Base Voltage VEBO -6 V Peak Pulse Current ICM -20 A Continuous Collector Current IC -6 -5.5 A Power Dissipation at Tamb=25°C Ptot 3 W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 square inch minimum FZT948 FZT949 C C E B TBA

• amps


• mv ic


• ic - collector current


• ns ns


• high performance


• collector-base breakdown


• collector-emitter breakdown

Informations

• Publié par: profil-zyan-2012
• Nombre de lectures: 39

Extrait

SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS ISSUE 2  NOVEMBER 1995 FEATURES * Extremelylow equivalent onresistance;R CE(sat) * 6Amps continuous current * Upto 20 Amps peak current * Verylow saturation voltage * Excellenth characteristicsspecified upto 20 Amps FE

PARTMARKING DETAILS — DEVICE TYPE IN FULL

ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL CollectorBase VoltageV CBO CollectorEmitter VoltageV CEO EmitterBase VoltageV EBO Peak Pulse CurrentI CM Continuous Collector CurrentI C Power Dissipation at T=25°C P amb tot Operating and Storage TemperatureT :Tstg j Range

FZT948 FZT949

C

FZT948 FZT949 40 50 20 30 6 20 6 5.5 3 55 to +150

E C B

UNIT V V V A A W °C

*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 square inch minimum

TBA