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APT website http: www advancedpower com

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6 pages
Niveau: Supérieur, Doctorat, Bac+8
APTM10AM02F A PT M 10 A M 02 F– R ev 1 O ct ob er , 2 00 4 APT website – 1 - 6 OUTVBUS E1 G1 0/VBUS G2 E2 Absolute maximum ratings These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 100 V Tc = 25°C 495 ID Continuous Drain Current Tc = 80°C 370 IDM Pulsed Drain current 1900 A VGS Gate - Source Voltage ±30 V RDSon Drain - Source ON Resistance 2.25 m? PD Maximum Power Dissipation Tc = 25°C 1250 W IAR Avalanche current (repetitive and non repetitive) 100 A EAR Repetitive Avalanche Energy 50 EAS Single Pulse Avalanche Energy 3000 mJ VDSS = 100V RDSon = 2.25m? max @ Tj = 25°C ID = 495A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS V® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance Phase leg MOSFET Power Module

  • source voltage

  • gate charge

  • vgs

  • drain current

  • junction temperature

  • low voltage

  • package characteristics

  • avalanche current


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hase leg MOSFET Power Module
APTM10AM02F
VDSS= 100V RDSon= 2.25mmax @ Tj = 25°C ID= 495A @ Tc = 25°C
Applicatio Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features ® Power MOS VFREDFETs -Low RDSon-Low input and Miller capacitance -Low gate charge -Avalanche energy rated -Very rugged Kelvin source for easy drive Very low stray inductance -Symmetrical design -M5 power connectors G1 V BUS0/VBUS OUTE 1 Benefits E 2Outstanding performance at high frequency operation G2Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Absolute maximumratingsymbol ParameterMa ratingsUnit VDSS100 V Drain- Source Breakdown Voltage Tc= 25°C495 IDDrain Current Continuous Tc370 A= 80°C IDM Pulsed1900Drain current VGS- Source Voltage Gate±30 V RDSon- Source ON Resistance2.25 m DrainPD MaximumTPower Dissipationc1250 W= 25°C IARcurrent (repetitive and non repetitive)100 A Avalanche EAR RepetitiveAvalanche Energy50 mJ EASPulse Avalanche Energy Single3000  TheseDevices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT websitehttp:/ www.advancedpower.com1 - 6
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